DTA115EM / DTA115EE / DTA115EUA DTA115EKA / DTA115ESA Transistors Digital transistors (built-in resistors) DTA115EM / DTA115EE / DTA115EUA / DTA115EKA / DTA115ESA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on/off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. !Equivalent circuit R1 IN OUT R2 GND (+) IN OUT GND (+) !Structure PNP digital transistor (Built-in resistor type) !External dimensions (Units : mm) DTA115EM DTA115EE 1.2 0.8 1.6±0.2 1.0±0.1 0.2 0.5 0.5 +0.1 0.2−0.05 0.8 (2) (3) 0.4 0.4 1.2 0.32 0.2 0.7±0.1 +0.1 0.2−0.05 0.55±0.1 (1) IN (2) GND (3) OUT ROHM : VMT3 (3) +0.1 0.3 −0.05 ROHM : EMT3 0~0.1 (1) GND (2) IN (3) OUT 0.1Min. 0.15Max. (2) 1.6±0.2 0.13 0~0.1 0.5 0.22 (1) 0.8±0.1 (1) 0.15±0.05 Abbreviated symbol : 19 Abbreviated symbol : 19 DTA115EKA 2.0±0.2 ROHM : SPT EIAJ : SC-72 3Min. (1) (2) (3) 0.5 +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions 0.15 0.45 + −0.05 (1) GND (2) OUT (3) IN 0.3Min. ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : 19 0.15 0.45+ −0.05 0.4 2.5 + −0.1 0~0.1 (3) (1) GND (2) IN (3) OUT 2±0.2 3±0.2 (15Min.) 5 2.8±0.2 0~0.1 Abbreviated symbol : 19 4±0.2 (2) 1.6+0.2 −0.1 2.1±0.1 (1) 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions DTA115ESA 0.8±0.1 0.95 0.95 (2) (3) ROHM : UMT3 EIAJ : SC-70 1.1+0.2 −0.1 1.9±0.2 0.7±0.1 0.2 1.25±0.1 (1) 2.9±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.1Min. DTA115EUA (1) GND (2) IN (3) OUT DTA115EM / DTA115EE / DTA115EUA DTA115EKA / DTA115ESA Transistors !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit VCC VI −50 −40~+10 V V mA Supply voltage Input voltage Output current IO −20 IC(Max.) −100 150 Pd 200 DTA115EM / DTA115EE Power dissipation DTA115EUA / DTA115EKA DTA115ESA mW 300 Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C !Electrical characteristics (Ta=25°C) Parameter Input voltage Symbol VI(off) Min. Typ. Max. − − VI(on) −0.5 − −0.3 Output voltage Input current Output current DC current gain VO(on) −3 − − −0.1 II − − IO(off) − 82 − Input resistance R1 Resistance ratio R2/R1 fT 70 0.8 − Transition frequency GI Unit V V − −0.15 −0.5 − mA µA − 100 1 130 1.2 kΩ 250 − − MHz Conditions VCC=−5V, IO=−100µA VO=−0.3V, IO=−1mA IO=−5mA, II=−0.25mA VI=−5V VCC=−50V, VI=0V IO=−5mA, VO=−5V − − VCE=10V, IE=−5mA, f=100MHz ∗Transition frequency of the device. !Package, marking, and packaging specifications Type DTA115EM DTA115EE DTA115EUA DTA115EKA DTA115ESA Package Marking VMT3 19 T2L 8000 EMT3 19 TL 3000 UMT3 19 T106 3000 SMT3 19 T146 3000 SPT − TP 5000 Packaging code Basic ordering unit (pieces) ∗