ROHM DTB743ZM

200mA / 30V Low VCE (sat) Digital transistors
(with built-in resistors)
DTB743ZE / DTB743ZM
Dimensions (Unit : mm)
Applications
Inverter, Interface, Driver
DTB743ZE
0.7
1.6
0.55
0.3
0.8
(2)
1.6
(3)
(1)
0.2
0.2
0.1Min.
Feature
1) VCE(sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors
(see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
0.15
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : P13
1.2
0.32
0.2
DTB743ZM
0.8
1.2
(3)
(1)(2)
0.4 0.4
0.2
0.22
(1) IN
(2) GND
(3) OUT
0.13
0.5
0.8
VMT3
Structure
PNP epitaxial plannar silicon transistor
(Resistor built-in type)
Each lead has same dimensions
Abbreviated symbol : P13
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Packaging specifications
Limits
DTB743ZE DTB743ZM
Unit
Supply voltage
VCC
−30
V
Input voltage
VIN
−20 to +5
V
Collector current
∗1
IC (max)
−200
mA
Power dissipation
∗2
PD
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
Package
EMT3
VMT3
Packaging type
Taping
Taping
TL
T2L
3000
8000
Code
Basic ordering
unit (pieces)
Part No.
−
DTB743ZE
−
DTB743ZM
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Electrical characteristics (Ta=25C)
Equivalent circuit
Min.
Typ.
Max.
VI(off)
−
−
−0.3
VI(on)
−2.5
−
−
VO(on)
−
−70
−300
mV
IO/II= −50mA / −2.5mA
II
−
−
−1.4
mA
VI= −5V
IO(off)
−
−
−0.5
μA
VCC= −30V, VI=0V
DC current gain
GI
140
−
−
−
Transition frequency ∗
fT
−
260
−
MHz
Input resistance
R1
3.29
4.7
6.11
kΩ
−
Resistance ratio
R2/R1
8.0
10
12
−
−
Parameter
Symbol
Input voltage
Output voltage
Input current
Output current
Unit
V
Conditions
VCC= − 5V, IO= −100μA
VO= −0.3V, IO= −20mA
www.rohm.com
R2
GND(+)
VO= −2V, IO= −100mA
VCE= −10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor.
c 2011 ROHM Co., Ltd. All rights reserved.
○
OUT
R1
IN
1/2
OUT
IN
GND(+)
R1=4.7kΩ / R2=47kΩ
2011.11 - Rev.A
DTB743ZE / DTB743ZM
Data Sheet
Electrical characteristics
160
II=-0.4mA
120
II=-0.3mA
80
II=-0.2mA
40
II=-0.1mA
0
0
0.4
0.8
1.2
1.6
2
-100
-100
VO=-0.3V
-10
Ta=125ºC
75ºC
25ºC
-40ºC
-1
-0.1
II=0A
-0.1
Fig 1. Output Current vs. Output Voltage
-10
-100
-1000
-10
Ta=125ºC
75ºC
25ºC
-55ºC
-1
-0.1
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
INPUT VOLTAGE : VI(off) (V)
Fig 2. Input Voltage vs. Output Current
(ON Characteristics)
Fig 3. Output Currentvs. Input Voltage
(OFF Characteristics)
-1
VO=-5V
IO/II=20/1
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
-1
OUTPUT CURRENT : IO (mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
1000
VO=-5V
OUTPUT CURRENT : IO (mA)
II=-1.0mA
II=-0.9mA
II=-0.8mA
II=-0.7mA
II=-0.6mA
II=-0.5mA
Ta=25ºC
INPUT VOLTAGE : VI(on) (V)
COLLECTOR CURRENT : IC (mA)
200
Ta=125ºC
75ºC
25ºC
-40ºC
100
10
-0.1
-1
-10
-100
-1000
OUTPUT CURRENT : IO (mA)
Fig4. DC Current Gain vs. Output Current
www.rohm.com
c 2011 ROHM Co., Ltd. All rights reserved.
○
Ta=125ºC
75ºC
25ºC
-40ºC
-0.1
-0.01
-0.1
-1
-10
-100
-1000
OUTPUT CURRENT : IO (mA)
Fig 5. Output Voltage vs. Output Current
2/2
2011.11 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A