HTT1213E Silicon NPN Epitaxial Twin Transistor REJ03G0526-0100 (Previous ADE-208-1449(Z)) Rev.1.00 Feb.07.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor 2SC5700 2SC5700 Outline PXSF0006LA-A (Previous code: EMFPAK-6) Pin Arrangement B1 6 6 5 4 2 B2 4 Q2 Q1 1 Note: E2 5 3 C1 1 E1 2 1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Base Q2 5. Emitter Q2 6. Base Q1 C2 3 Marking is “E”. Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature *Value on PCB. (FR–4(13 x 13 x 0.635 mm)) Rev.1.00, Feb.07.2005, page 1 of 3 Symbol Q1 and Q2 Unit VCBO VCEO VEBO IC PC Tj Tstg 15 4 1.5 50 Total 200* 150 –55 to +150 V V V mA mW °C °C HTT1213E Electrical Characteristics (Q1 and Q2) (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Rev.1.00, Feb.07.2005, page 2 of 3 Symbol Min Typ Max Unit Test conditions V(BR)CBO 15 V IC = 10 µA, IE = 0 ICBO ICEO IEBO hFE Cre 100 130 0.30 0.1 1 0.1 150 0.45 µA µA µA pF VCB = 15 V, IE = 0 VCE = 4 V, RBE = infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA fT |S21|2 NF 10 13 12 16 1.0 1.7 GHz dB dB VCB = 1 V, f = 1 MHz Emitter ground VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 Ω HTT1213E Package Dimensions JEITA Package Code RENESAS Code PXSF0006LA-A D Previous Code MASS[Typ.] EMFPAK-6 / EMFPAK-6V 0.0012g A e c E HE A A LP L x M S b A e A2 A A1 y S Reference Symbol e1 S b I1 b1 c1 c b2 A-A Section Pattern of terminal position areas A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 I1 Dimension in Millimeters Min 0.45 0 0.45 0.1 0.1 1.15 0.75 0.95 0.05 0.1 Nom 0.17 0.15 0.13 0.11 1.2 0.8 0.4 1.0 0.1 Max 0.5 0.01 0.49 0.25 0.15 1.25 0.85 1.05 0.15 0.3 0.05 0.05 0.3 0.7 0.35 Ordering Information Part Name HTT1213EETL Quantity 5000 Shipping Container φ178Taping Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is applied. Contact Renesas sales office for any question regarding recommended soldering condition of Renesas. Rev.1.00, Feb.07.2005, page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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