DATA SHEET SHEET DATA SILICON TRANSISTOR NE68139 / 2SC4094 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor PACKAGE DIMENSIONS (Units: mm) designed for use in low-noise and small signal amplifiers from VHF band +0.2 2 • S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V 5° Collector Current IC 65 mA Total Power Dissipation PT 200 mW 150 C C 65 to +150 +0.1 4 +0.1 V 0.16 −0.06 20 0 to 0.1 VCBO Tj 5° 1.1−0.1 0.8 Collector to Base Voltage Tstg 5° +0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Junction Temperature +0.1 +0.1 0.6 −0.05 • NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA 0.4 −0.05 1 FEATURES (1.9) 2.9±0.2 (1.8) 0.85 0.95 process) which is a proprietary new fabrication technique. Storage Temperature 0.4 −0.05 This achieved by direct nitride passivated base surface process (DNP 3 +0.1 achieve a very wide dynamic range and excellent linearity. 2.8 −0.3 +0.2 1.5 −0.1 0.4 −0.05 to UHF band. Low-noise figure, high gain, and high current capability 5° PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 1 V, IC = 0 DC Current Gain hFE Gain Bandwidth Product fT Feed-Back Capacitance Cre Maximum Available Gain 9 0.25 GHz dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz MAG 17 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz NF 1.2 dB VCE = 8 V, IC = 7 mA, f = 1.0 GHz 13 Class R36/RCF * R37/RCG * R38/RCH * Marking R36 R37 R38 hFE 50 to 100 80 to 160 125 to 250 0.8 VCE = 8 V, IC = 20 mA, f = 1.0 GHz 15 2 hFE Classification Document No. P10366EJ1V1DS00 (1st edition) Date Published March 1997 N VCE = 8V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz Noise Figure * Old Specification / New Specification 250 pF S21e Insertion Power Gain 50 2.0 JEITA Part No. NE68139 / 2SC4094 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.0 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1.0 GHz 200 100 0 100 50 150 TA-Ambient Temperature-°C Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-mW Free air 1.0 0.7 0.5 0.3 0.2 0.1 1 2 3 5 7 10 20 VCB-Collector to Base Voltage-V DC CURRENT GAIN vs. COLLECTOR CURRENT 200 INSERTION GAIN vs. COLLECTOR CURRENT 20 VCE = 8 V VCE = 8 V f = 1.0 GHz |S21e|2-Insertion Gain-dB hFE-DC Current Gain 100 50 20 10 0.5 1 5 10 10 50 0 IC-Collector Current-mA 1 2 5 10 20 40 IC-Collector Current-mA 30 GAIN BANDWIDTH PRODUT vs. COLLECTOR CURRENT |S21e|2-Insertion Gain -dB MAG-Maximum Available Gain-dB fT-Gain Bandwidth Product-GHz 20 10 7 5 3 2 1 2 3 5 7 10 IC-Collector Current-mA 2 30 VCE = 8 V 20 30 MAXIMUM AVAILABLE GAIN, INSERTION GAIN vs. FREQUENCY MAG VCE = 8 V IC = 20 mA 20 |S21e|2 10 0 0.1 0.2 0.5 f-Frequency-GHz 1.0 2.0 NE68139 / 2SC4094 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 8 V f = 1.0 GHz NF-Noise Figure-dB 6 5 4 3 2 1 0 0.5 1 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE = 8.0 V, IC = 5.0 mA, ZO = 50 f (MHz) S11 S11 200 0.774 47.8 12.689 400 0.631 88.8 9.952 600 0.523 120.9 800 0.460 1000 S21 S21 S12 S12 S22 S22 146.5 0.031 65.4 0.882 19.1 119.4 0.048 53.4 0.723 29.5 7.813 100.9 0.058 46.2 0.611 33.4 145.1 5.966 87.6 0.067 43.9 0.564 34.5 0.426 166.6 4.841 76.7 0.074 43.8 0.515 37.6 1200 0.416 178.2 4.065 68.8 0.083 43.5 0.488 39.6 1400 0.417 163.0 3.413 60.7 0.087 41.2 0.459 44.1 1600 0.430 152.1 3.035 54.1 0.098 42.8 0.443 45.9 1800 0.443 142.1 2.659 48.0 0.105 40.1 0.428 51.1 2000 0.458 136.5 2.482 44.3 0.114 43.0 0.414 53.5 S21 S21 S12 S12 S22 S22 VCE = 8.0 V, IC = 20.0 mA, ZO = 50 f (MHz) S11 S11 200 0.461 89.8 23.331 121.6 0.021 60.7 0.665 27.7 400 0.364 135.8 13.501 99.2 0.033 61.2 0.511 30.5 600 0.338 163.4 9.535 86.4 0.046 61.5 0.448 29.5 800 0.330 177.9 7.083 77.5 0.056 62.1 0.430 29.5 1000 0.334 163.2 5.604 69.3 0.070 60.0 0.402 32.5 1200 0.344 153.9 4.722 63.5 0.084 60.4 0.385 34.8 1400 0.359 143.1 3.982 56.8 0.091 54.9 0.362 39.5 1600 0.383 136.1 3.517 51.1 0.104 54.5 0.350 42.1 1800 0.401 128.3 3.094 45.6 0.116 49.9 0.337 47.4 2000 0.419 124.7 2.882 42.7 0.127 50.8 0.323 50.5 3 NE68139 / 2SC4094 S-PARAMETER S11e, S22e-FREQUENCY CONDITION VCE = 8 V, IC = 20/5 mA, freq. = 0.2 to 2 GHz (Step 200 MHz) 1.4 1.8 0 3. 4 0. O 0.6 0.8 4.0 1.0 0 1. 6.0 0.6 10 5.0 4.0 1.8 2.0 1.6 1.4 1.2 0.9 1.0 0.6 0.5 0.4 0.3 20 10 0.1 0.2 3.0 50 0.2 0.7 0.8 0.4 S22e 0.27 0.23 0.2 GHz 1. 0.8 ( E NC TA X AC −J––O– RE –Z 0 3. ) 1.0 0.6 E IV AT 4.0 0 −4 0.4 NE G 5 0. 0. 31 19 0. 4 0. 3 07 30 1.8 2.0 0. 1.6 1.4 0.35 0.15 −70 1.2 4 0.3 6 0.1 0.36 0.14 −80 1.0 0 0.9 3 0.3 7 −6 −90 0.37 0.13 0.38 0.12 0.8 0.1 0.7 32 0.2 −1 0.6 0. 18 0 −5 S12e-FREQUENCY 0.39 0.11 −100 CONDITION VCE = 8 V IC = 20/5 mA freq. = 0.2 to 2 GHz (Step 200 MHz) 90° 120° 0 −11 0.40 0.10 0.4 0.0 2 8 0 −1 2 0.4 1 0.0 9 60° IC = 20 mA 0. CONDITION VCE = 8 V IC = 20/5 mA freq. = 0.2 to 2 GHz (Step 200 MHz) 90° 0 . 2 9 0.2 1 0.3 −3 0.2 0 0 0 IC = 5 mA 5.0 0 IC = 5 mA 0.2 GHz 0.2 8 0.2 2 −20 8 0. 4 −10 2 GHz 0.6 0.26 0.24 IC = 20 mA 0.4 0.25 0.25 0 ) 50 20 0.3 0.2 0.8 10 20 REACTANCE COMPONENT R –––– 0.2 ZO ( 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 2 GHz 1 0.2 9 0.2 30 ( –Z–+–J–XTANCE CO ) MPO N 0.4 S21e-FREQUENCY S21e 150° 0. 18 32 0. 50 2.0 5 0. T EN S11e 0. 0.2 GHz 0.1 0.3 7 3 600 1.6 0.6 0.2 0.2 120° 0.1 6 0.3 4 0 0.2 0 0.3 WAVELE NG 70 IC = 20 mA 0.1 0.3 0.15 0.35 1.2 0.9 1.0 0.14 0.36 80 40 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE −1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. −1 EA CO C 0.13 0.37 90 19 0. 31 0. 07 0. 3 4 0. 0 13 0.12 0.38 0.11 0.39 100 0.7 8 0.0 2 0.4 20 1 0.10 0.40 110 0.8 9 0.0 1 0.4 30° 150° 60° S12e IC = 20 mA IC = 5 mA 180° 30° IC = 5 mA 0 2GHz 4 8 12 −150° 16 20 −60° −90° 0.2 GHz 0° 180° −30° −120° 4 2GHz 0 0.04 0.08 0.12 0.16 0.2 −150° 0° −30° −60° −120° −90° NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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