µPA806T - California Eastern Laboratories

DATA SHEET
SILICON TRANSISTOR
µPA806T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
PACKAGE DRAWINGS
• Low Noise, High Gain
(Unit: mm)
• Operable at Low Voltage
2.1±0.1
• Small Feed-back Capacitance
1.25±0.1
Cre = 0.4 pF TYP.
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA806T-T1
Taping products
(3 KPCS/Reel)
Remark 5P PSEFS FWBMVBUJPO TBNQMFs QMFBTF DPOUBDU ZPVS nearby sales office.
PIN CONFIGURATION (Top View)
Part number for sample order: µPA806T-A (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
6
Q1
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30
mA
Total Power Dissipation
PT
150 in 1 element
200 in 2 elements Note
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
Note 110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. ID-3640
(O.D. No. ID-9147)
Date Published April 1995 P
0.2 –0
6
4
5
1
2
+0.1
µPA806T
0.15 –0
PACKING STYLE
0~0.1
QUANTITY
0.7
PART NUMBER
0.9±0.1
3
1.3
0.65 0.65
ORDERING INFORMATION
X Y
2.0±0.2
+0.1
• Built-in 2 Transistors (2 × 2SC4959)
5
4
Q2
1
2
3
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Base (Q2)
2. Emitter (Q1)
6. Base (Q1)
3. Collector (Q2)
µPA806T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
SYMBOL
CONDITION
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
DC Current Gain
hFE
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
mANote 1
TYP.
VCE = 3 V, IC = 10 mA, f = 2 GHz
12
Cre
MHzNote 2
0.4
VCE = 3 V, IC = 10 mA, f = 2 GHz
NF
VCE = 3 V, IC = 3 mA, f = 2 GHz
hFE1/hFE2
UNIT
0.1
µA
0.1
µA
150
fT
VCB = 3 V, IE = 0, f = 1
MAX.
75
|S21|2
Noise Figure
hFE Ratio
VCE = 3 V, IC = 10
MIN.
7
0.7
pF
8.5
1.5
VCE = 3 V, IC = 10 mA
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
GHz
dB
2.5
dB
0.85
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
KB
Marking
T83
hFE Value
75 to 150
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
200
2
Collector Current IC (mA)
Total Power Dissipation PT (mW)
50
El
em
en
ts
Pe
rE
in
lem
t
50
To
ta
en
100
0
l
100
Ambient Temperature TA (°C)
2
VCE = 3 V
Free Air
150
40
30
20
10
0
0.5
Base to Emitter Voltage VBE (V)
1.0
µPA806T
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
60
50
400 µA
40
300 µA
30
200 µA
20
IB = 100 µA
DC Current Gain hFE
Collector Current IC (mA)
500 µA
5V
VCE = 3 V
100
10
0
0.1 0.2
0
0.5
Collector to Emitter Voltage VCE (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
5V
3V
10
8
VCE = 1 V
6
4
50 100
5V
8
3V
VCE = 1 V
6
4
2
1
2
5
10
20
50
1
2
5
10
20
50
Collector Current IC (mA)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
NOISE FIGURE vs.
COLLECTOR CURRENT
0.6
4
Feed-back Capacitance Cre (pF)
f = 2 GHz
VCE = 3 V
Noise Figure NF (dB)
10 20
f = 2 GHz
Collector Current IC (mA)
3
2
1
0
0.5
5
10
f = 2 GHz
12
2
0.5
2
INSERTION GAIN vs.
COLLECTOR CURRENT
Insertion Power Gain l S21e l 2 (dB)
Gain Bandwidth Product fT (GHz)
14
1
Collector Current IC (mA)
1
2
5
10
Collector Current IC (mA)
20
50
f = 1 MHz
0.5
0.4
0.3
0.2
0.5
1
2
5
10
20
Collector to Base Voltage VCB (V)
3
µPA806T
S-PARAMETERS
V CE = 3 V, I C = 1 mA, Z O = 50 Ω
f
S11
GHz
MAG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.9340
0.9040
0.8150
0.7530
0.6540
0.5900
0.5160
0.4590
0.4230
0.3670
0.3370
0.3150
0.3080
0.2930
0.2950
S21
ANG
–15.7
–29.4
–43.4
–56.6
–68.9
–79.8
–90.1
–101.5
–110.8
–123.9
–136.7
–145.5
–159.1
–164.8
–179.6
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
3.5100
3.3520
3.1060
2.8840
2.6050
2.4490
2.2610
2.0780
1.9250
1.8700
1.7790
1.6600
1.5690
1.5190
1.4610
164.8
150.7
138.0
126.3
115.1
105.4
96.8
89.4
83.7
76.3
69.9
64.1
59.4
55.3
50.7
0.0450
0.0780
0.1140
0.1370
0.1490
0.1660
0.1770
0.1780
0.1880
0.1900
0.2110
0.2140
0.2070
0.2140
0.2260
82.6
68.0
62.8
58.0
55.2
45.4
44.8
45.1
42.5
41.9
43.9
41.9
42.8
45.8
45.4
0.9850
0.9410
0.8960
0.8260
0.7830
0.7220
0.6790
0.6430
0.6290
0.5880
0.5630
0.5520
0.5450
0.5220
0.4960
–8.7
–17.1
–23.6
–29.9
–34.7
–38.0
–42.0
–45.2
–46.8
–51.4
–54.3
–57.0
–59.2
–64.5
–61.3
MAG
ANG
MAG
ANG
MAG
ANG
8.8990
7.4880
6.1260
5.1230
4.3050
3.7880
3.3560
3.0100
2.6960
2.5340
2.3820
2.1870
2.0530
1.9660
1.8710
154.2
134.4
119.6
108.1
99.1
91.3
84.8
79.1
74.4
69.4
64.0
60.0
55.8
53.0
49.6
0.0370
0.0760
0.0860
0.1050
0.1210
0.1330
0.1440
0.1570
0.1760
0.1940
0.2150
0.2130
0.2410
0.2490
0.2750
67.2
65.6
60.9
58.4
55.9
61.2
55.4
56.2
58.0
56.1
56.3
57.8
57.6
55.2
56.6
0.9420
0.8040
0.7060
0.6250
0.5660
0.5190
0.4950
0.4660
0.4560
0.4310
0.4050
0.3990
0.3950
0.3750
0.3740
–15.7
–26.6
–33.2
–36.6
–38.3
–41.4
–43.9
–44.5
–44.5
–48.8
–51.9
–52.8
–52.9
–59.2
–60.8
V CE = 3 V, I C = 3 mA, Z O = 50 Ω
f
4
S11
GHz
MAG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.8020
0.6780
0.5440
0.4430
0.3540
0.2930
0.2360
0.2000
0.1820
0.1480
0.1370
0.1340
0.1640
0.1500
0.1780
S21
ANG
–25.9
–45.8
–62.8
–75.7
–87.3
–99.7
–108.4
–121.0
–129.5
–151.7
–166.1
175.2
169.7
170.9
147.7
S12
S22
µPA806T
S-PARAMETERS
V CE = 3 V, I C = 5 mA, Z O = 50 Ω
f
S11
GHz
MAG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.6900
0.5360
0.4010
0.3150
0.2360
0.1850
0.1440
0.1230
0.1040
0.1000
0.1110
0.1040
0.1180
0.1190
0.1490
S21
ANG
–33.3
–54.7
–70.0
–82.4
–93.8
–105.4
–115.8
–134.4
–144.6
–170.6
167.4
158.2
156.3
150.0
142.4
MAG
12.2960
9.4300
7.2390
5.8220
4.7830
4.1700
3.6410
3.2380
2.8910
2.7040
2.5330
2.3270
2.1850
2.0910
1.9760
S12
S22
ANG
MAG
ANG
MAG
ANG
147.1
125.5
111.3
101.1
93.4
86.4
80.7
76.1
71.4
67.3
62.6
58.7
54.9
52.6
49.0
0.0320
0.0610
0.0700
0.0950
0.1090
0.1260
0.1350
0.1560
0.1770
0.1930
0.2080
0.2260
0.2560
0.2560
0.2860
74.8
66.3
59.6
63.8
62.3
61.9
65.9
61.2
62.4
60.7
60.6
61.6
58.2
56.8
56.6
0.8850
0.7210
0.6030
0.5230
0.4870
0.4600
0.4360
0.4170
0.4020
0.3940
0.3710
0.3500
0.3560
0.3520
0.3410
–19.7
–30.3
–34.5
–36.7
–38.0
–38.8
–40.4
–42.6
–43.9
–45.8
–50.3
–50.2
–51.2
–58.1
–56.9
ANG
MAG
ANG
MAG
ANG
135.9
114.2
102.0
93.8
87.2
81.6
76.9
72.4
68.8
65.0
60.5
57.0
53.5
50.9
47.9
0.0330
0.0520
0.0690
0.0880
0.1060
0.1260
0.1450
0.1590
0.1790
0.2060
0.2220
0.2420
0.2660
0.2770
0.2860
63.8
68.5
69.0
71.6
69.3
70.1
70.5
65.5
65.0
63.9
62.8
60.9
59.9
59.6
58.3
0.7930
0.5910
0.5130
0.4480
0.4180
0.4030
0.3930
0.3680
0.3610
0.3480
0.3360
0.3370
0.3170
0.3280
0.3100
–26.2
–32.9
–32.9
–32.8
–35.9
–33.3
–36.5
–36.2
–39.5
–42.3
–46.6
–48.8
–47.2
–55.1
–51.2
V CE = 3 V, I C = 10 mA, Z O = 50 Ω
f
S11
GHz
MAG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.5080
0.3410
0.2320
0.1770
0.1220
0.1010
0.0670
0.0620
0.0660
0.0770
0.0990
0.1140
0.1260
0.1020
0.1370
S21
ANG
–43.6
–65.3
–80.7
–90.8
–108.2
–121.8
–138.2
–167.6
–171.3
146.7
146.5
128.1
136.8
129.6
123.5
MAG
17.0900
11.3980
8.2250
6.3950
5.1870
4.4390
3.8770
3.4350
3.0650
2.8540
2.6590
2.4400
2.2790
2.1950
2.0800
S12
S22
5
NOTICE
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