DATA SHEET NPN SILICON RF TRANSISTOR NE68539 / 2SC4957 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Reverse Transfer Capacitance Cre = 0.3 pF TYP. • 4-pin minimold Package ORDERING INFORMATION Part Number Quantity NE68539E-A 2SC4957 -A 50 pcs (Non reel) NE68539E-T1-A 2SC4957-T1-A 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V IC 30 mA 180 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Free air Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10520EJ01V0DS (1st edition) (Previous No. P10379EJ2V0DS00) Date Published September 2004 CP(K) The mark shows major revised points. JEITA Part No. NE68539 / 2SC4957 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 100 nA VCE = 3 V, IC = 10 mA 75 − 150 − VCE = 3 V, IC = 10 mA − 12 – GHz ⏐S21e⏐ VCE = 3 V, IC = 10 mA, f = 2.0 GHz 9 11 − dB NF VCE = 3 V, IC = 3 mA, f = 2.0 GHz − 1.5 2.5 dB VCB = 3 V, IE = 0 mA, f = 1.0 MHz − 0.3 0.5 pF DC Current Gain hFE Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Noise Figure Reverse Transfer Capacitance Cre Note 2 Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION 2 Rank T83 Marking T83 hFE Value 75 to 150 Data Sheet PU10520EJ01V0DS NE68539 / 2SC4957 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) 200 180 mW 100 100 150 0.5 f = 1 MHZ 0.4 0.3 0.2 0.1 0.5 1 2 5 10 20 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 VCE = 3 V 40 Collector Current IC (mA) Collector Current IC (mA) 50 50 Reverse Transfer Capacitance Cre (pF) Free Air 0 30 20 10 0 200 DC Current Gain hFE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.5 400 μA 40 300 μA 30 200 μ A 20 IB = 100 μA 10 1 2 3 4 5 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 14 VCE = 5 V VCE = 3 V 100 0 0.1 0.2 500 μA 50 0 1.0 Gain Bandwidth Product fT (GHz) Total Power Dissipation Ptot (mW) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.5 1 2 5 10 20 50 100 6 f = 2 GHZ 12 VCE = 5 V VCE = 3 V 10 8 VCE = 1 V 6 4 2 0.5 Collector Current IC (mA) 1 2 5 10 20 50 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10520EJ01V0DS 3 NE68539 / 2SC4957 INSERTION POWER GAIN vs. COLLECTOR CURRENT 4 VCE = 5 V f = 2 GHZ VCE = 3 V 10 8 VCE = 1 V 6 4 1 2 5 10 20 50 Noise Figure NF (dB) Insertion Power Gain |S21e|2 (dB) 12 f = 2 GHZ VCE = 3 V 3 2 1 0 0.5 1 2 5 10 20 Collector Current IC (mA) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. S-PARAMETERS 4 NOISE FIGURE vs. COLLECTOR CURRENT Data Sheet PU10520EJ01V0DS 50 NE68539 / 2SC4957 PACKAGE DIMENSIONS 4-PIN MINIMOLD PACKAGE (UNIT: mm) 2.8+0.2 –0.3 0.95 0.4+0.1 –0.05 3 (1.9) 0.16+0.1 –0.06 5˚ 0.4+0.1 –0.05 4 5˚ 5˚ 0 to 0.1 0.8 1.1+0.2 –0.1 0.6+0.1 –0.06 1 0.85 (1.8) T83 2.9±0.2 2 0.4+0.1 –0.05 1.5+0.2 –0.1 5˚ PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Data Sheet PU10520EJ01V0DS 5 NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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