NESG2101M16

NPN SILICON GERMANIUM RF TRANSISTOR
NESG2101M16
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NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
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• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
high-gain amplification
PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz
NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
• Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
ORDERING INFORMATION
Part Number
NESG2101M16
NESG2101M16-T3
Order Number
Package
NESG2101M16-A
Quantity
6-pin lead-less minimold
50 pcs
• 8 mm wide embossed taping
(M16, 1208 PKG)
(Non reel)
• Pin 1 (Collector), Pin 6 (Emitter) face the
(Pb-Free)
NESG2101M16-T3-A
Supplying Form
10 kpcs/reel
perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
13.0
V
Collector to Emitter Voltage
VCEO
5.0
V
Emitter to Base Voltage
VEBO
1.5
V
IC
100
mA
190
mW
SC
Parameter
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
2
Note Mounted on 1.08 cm  1.0 mm (t) glass epoxy PCB
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• 6-pin lead-less minimold (M16, 1208 PKG)
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10395EJ03V0DS (3rd edition)
Date Published September 2009 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NESG2101M16
ELECTRICAL CHARACTERISTICS (T A = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
ICBO
VCB = 5 V, IE = 0 mA


100
nA
Emitter Cut-off Current
IEBO

100
nA
190
260

17

GHz
DC Current Gain
hFE
VEB = 1 V, IC = 0 mA

Note 1
VCE = 2 V, IC = 15 mA
130
fT
VCE = 3 V, IC = 50 mA, f = 2 GHz
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Gain Bandwidth Product
S21e
Insertion Power Gain
2
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RF Characteristics
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Collector Cut-off Current
VCE = 3 V, IC = 50 mA, f = 2 GHz
11.5
13.5

dB
NF
VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt

0.9
1.2
dB
Noise Figure (2)
NF
VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt

0.6

dB
Associated Gain (1)
Ga
VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
11.0
13.0

dB
Associated Gain (2)
Ga
VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt

19.0

dB
VCB = 2 V, IE = 0 mA, f = 1 MHz

0.4
0.5
pF
VCE = 3 V, IC = 50 mA, f = 2 GHz
14.5
17.0

dB

21

dBm

15

dBm
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Noise Figure (1)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
Note 2
MSG
Note
3
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f
= 2 GHz, ZS = ZSopt, ZL = ZLopt
Linear Gain
GL
VCE = 3.6 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
Rank
FB/YFB
Marking
zH
hFE Value
130 to 260
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hFE CLASSIFICATION
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Data Sheet PU10395EJ03V0DS
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TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)
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S-PARAMETERS
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NESG2101M16
PACKAGE DIMENSIONS
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6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical
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performance and heat sinking.
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Data Sheet PU10395EJ03V0DS