NESG250134

NPN SILICON GERMANIUM RF TRANSISTOR
NESG250134
FEATURES
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• This product is suitable for medium output power (800 mW) amplification
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NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (800 mW)
3-PIN POWER MINIMOLD (34 PACKAGE)
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz
• MSG (Maximum Stable Gain) = 23 dB TYP., @ VCE = 3.6 V, Ic = 100 mA, f = 460 MHz
• Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 20 V
• 3-pin power minimold (34 package)
Part Number
NESG250134-A
NESG250134-T1-A
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ORDERING INFORMATION
Quantity
Supplying Form
25 pcs (Non reel)
• 12 mm wide embossed taping
1 kpcs/reel
• Pin 2 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
9.2
V
Emitter to Base Voltage
VEBO
2.8
V
IC
500
mA
1.5
W
SC
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
2
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Note Mounted on 34.2 cm  0.8 mm (t) glass epoxy PWB
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10422EJ02V0DS (2nd edition)
Date Published July 2004 CP(K)
The mark  shows major revised points.
NESG250134
THERMAL RESISTANCE (T A = +25C)
Parameter
Termal Resistance from Junction to
Ratings
Unit
Rthj-a
80
C/W
Note
2
Note Mounted on 34.2 cm  0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (T A = +25C)
Collector to Emitter Voltage
Collector Current
Input Power
Note
Symbol
MIN.
TYP.
MAX.
Unit
VCE

3.6
4.5
V
IC

400
500
mA
Pin

12
17
dBm
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Note Input power under conditions of VCE  4.5 V, f = 460 MHz
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Parameter
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Ambient
Symbol
2
Data Sheet PU10422EJ02V0DS
NESG250134
ELECTRICAL CHARACTERISTICS (T A = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
ICBO
VCB = 5 V, IE = 0 mA


1
A
Emitter Cut-off Current
IEBO

1
A
120
180

10

GHz
DC Current Gain
hFE
VEB = 0.5 V, IC = 0 mA

Note 1
VCE = 3 V, IC = 100 mA
80
fT
VCE = 3.6 V, IC = 100 mA, f = 460 MHz

Gain Bandwidth Product
S21e
Insertion Power Gain
Maximum Satble Gain
MSG
2
Note
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RF Characteristics
VCE = 3.6 V, IC = 100 mA, f = 460 MHz

19

dB
VCE = 3.6 V, IC = 100 mA, f = 460 MHz

23

dB
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
16
19

dB

16

dB
27
29

dBm

29

dBm

60

%

60

%
2
Linner gain (1)
GL
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Collector Cut-off Current
f = 460 MHz, Pin = 0 dBm
Linner gain (2)
GL
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
Output Power (1)
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f = 900 MHz, Pin = 0 dBm
Po
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm
Output Power (2)
Po
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
c
Collector Efficiency (1)
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm
c
Collector Efficiency (2)
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%
2. MSG =
S21
S12
hFE CLASSIFICATION
FB
SC
Rank
SN
hFE Value
80 to 180
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Marking
Data Sheet PU10422EJ02V0DS
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TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10422EJ02V0DS
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Remark The graphs indicate nominal characteristics.
Data Sheet PU10422EJ02V0DS
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Remark The graphs indicate nominal characteristics.
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Data Sheet PU10422EJ02V0DS
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Remark The graphs indicate nominal characteristics.
Data Sheet PU10422EJ02V0DS
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Notes
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PA EVALUATION BOARD (f = 460 MHz)
1. 38  90 mm, t = 0.8 mm double sided copper clad glass epoxy PWB.
2. Back side: GND pattern
3. Solder gold plated on pattern
4.
: Through holes
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PA EVALUATION CIRCUIT (f = 460 MHz)
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Data Sheet PU10422EJ02V0DS
NESG250134
C1
30 pF
Murata
C2
6 pF
Murata
C3, C4
7 pF
Murata
C5
3 pF
Murata
C6
0.5 pF
Murata
C7
5 pF
Murata
C8
10 pF
Murata
C9, C10
100 nF
Murata
L1
100 nH
Toko
L2
3 nH
Toko
R1
30 
SSM
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Maker
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Value
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COMPONENT LIST
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PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
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Remark The graph indicates nominal characteristics.
Data Sheet PU10422EJ02V0DS
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Notes
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DISTORTION EVALUATION BOARD (f = 460 MHz)
1. 38  90 mm, t = 0.8 mm, double sided copper clad glass epoxy PWB.
2. Back side: GND pattern
3. Solder gold plated on pattern
4.
: Through holes
DI
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DISTORTION EVALUATION CIRCUIT (f = 460 MHz)
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Data Sheet PU10422EJ02V0DS
NESG250134
C1
47 pF
Murata
C2
12 pF
Murata
C3, C4
7 pF
Murata
C5
3 pF
Murata
C6
6 pF
Murata
C7
0.5 pF
Murata
C8
5 pF
Murata
C9
51 pF
Murata
C10, C12
100 nF
Murata
1 F
Murata
L1
100 nH
Toko
L2
15 nH
Toko
R1
30 
SSM
C11
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Maker
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Value
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COMPONENT LIST
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DISTORTION EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
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Remark The graph indicates nominal characteristics.
Data Sheet PU10422EJ02V0DS
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PACKAGE DIMENSIONS
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3-PIN POWER MINIMOLD (34 PACKAGE) (UNIT: mm)
12
Data Sheet PU10422EJ02V0DS
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Data Sheet PU10422EJ02V0DS
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