PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • MAXIMUM STABLE POWER GAIN: MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz • SiGe HBT TECHNOLOGY: USH3 process, fmax = 110 GHz • M05 PACKAGE: Flat-lead 4 pin thin-type super minimold package ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NESG3031M05 50 pcs (Non reel) • 8 mm wide embossed taping NESG3031M05-T1 3 kpcs/reel • Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 12.0 V Collector to Emitter Voltage VCEO 4.3 V Emitter to Base Voltage VEBO 1.5 V IC 35 mA Ptot Note 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Collector Current Total Power Dissipation Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB California Eastern Laboratories NESG3031M05 ELECTRICAL CHARACHTERISTICS (TA = 25°C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 100 nA VCE = 2 V, IC = 6 mA 220 300 380 − |S21e|2 VCE = 3 V, IC = 20 mA, f = 5.8 GHz 6.0 8.5 − dB NF VCE = 2 V, IC = 6 mA, f = 5.2 GHz, − 0.95 − dB DC Current Gain hFE Note 1 RF Characteristics Insertion Power Gain Noise Figure (1) ZS = ZSopt, ZL = ZLopt Noise Figure (2) NF VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt − 1.1 1.5 dB Associated Gain (1) Ga VCE = 2 V, IC = 6 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt − 10.0 − dB Associated Gain (2) Ga VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt 7.5 9.5 − dB − 0.15 0.25 pF dB Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point Cre Note 2 VCB = 2 V, IE = 0 mA, f = 1 MHz 11.0 14.0 − PO (1 dB) VCE = 3 V, IC (set) = 20 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt − 13.0 − dBm OIP3 VCE = 3 V, IC (set) = 20 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt − 18.0 − dBm Note 3 MSG VCE = 3 V, IC = 20 mA, f = 5.8 GHz Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION RANK FB Marking T1K hFE Value 220 to 380 NESG3031M05 PACKAGE DIMENSIONS (Units in mm) FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD (M05, 2012 PACKAGE 2.05±0.1 2 0.59±0.05 0.11+0.1 -0.05 1 4 0.30+0.1 -0.05 T1K 0.65 0.65 1.30 2.0±0.1 3 1.25±0.1 PIN CONNECTIONS 1. 2. 3. 4. Base Emitter Collector Emitter Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 04/05/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd.