NE68039 / 2SC4095

DATA SHEET
SHEET
DATA
SILICON TRANSISTOR
NE68039 / 2SC4095
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
PACKAGE DIMENSIONS
(Units: mm)
+0.2
+0.1
3
2
+0.1
0.4 −0.05
2.8 −0.3
+0.2
1.5 −0.1
0.4 −0.05
• NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA
(1.9)
5°
5°
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
C
C
65 to +150
+0.1
5°
0 to 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
0.16 −0.06
1.1−0.1
0.8
+0.2
• S21e2 = 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA
0.4
4
+0.1
0.6 −0.05
1
FEATURES
+0.1
−0.05
The NE68039 / 2SC4095 is an NPN epitaxial silicon transistor
designed for use in low-noise and small signal amplifiers from VHF
band to UHF band. NE68039 / 2SC4095 features excellent power
gain with very low-noise figures. NE68039 / 2SC4095 employs
direct nitiride passivated base surface process (DNP process) which is
a proprietary new fabrication technique which provides excellent
noise figures at high current values. This allows excellent associated
gain and very wide dynamic range.
2.9±0.2
(1.8)
0.85 0.95
DESCRIPTION
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0
A
VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
A
VEB = 1 V, IC = 0
DC Current Gain
hFE
Gain Bandwidth Product
fT
Feed-Back Capacitance
Cre
Maximum Available Gain
10
0.25
VCE = 6 V, IC = 10 mA
GHz
dB
VCE = 6 V, IC = 10 mA, f = 2.0 GHz
MAG
12
dB
VCE = 6 V, IC = 10 mA, f = 2.0 GHz
NF
1.8
dB
VCE = 6 V, IC = 5 mA, f = 2.0 GHz
7.5
Class
R46/RDF *
R47/RDG *
R48/RDH *
Marking
R46
R47
R48
hFE
50 to 100
80 to 160
125 to 250
0.8
VCE = 6 V, IC = 10 mA f = 1.0 GHz
9.5
2
hFE Classification
Document No. P10367EJ2V1DS00 (2nd edition)
Date Published March 1997 N
250
VCB = 10 V, IE = 0, f = 1.0 MHz
Noise Figure
* Old Specification / New Specification
100
pF
S21e
Insertion Power Gain
50
3.0
JEITA
Part No.
NE68039 / 2SC4095
TYPICAL CHARACTERISTICS (TA = 25 C)
1.0
200
100
50
0
100
150
f = 1.0 GHz
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
0.5
1
0.2
0.1
0.06
1
TA-Ambient Temperature-°C
18
VCE = 6 V
2
5
10
VCB-Collector to Base Voltage-V
100
50
20
20
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 6 V
16
|S21e|2-Insertion Gain-dB
hFE-DC Current Gain
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Free Air
Cre-Feed-back Capacitance-pF
PT-Total Power Dissipation-mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
f = 1.0 GHz
14
12
10
f = 2.0 GHz
8
6
4
10
0.5
1
5
10
2
50
0
0.2
IC-Collector Current-mA
20
10
5
2
1
2
30
VCE = 6 V
|S21e|2-Insetion Gain -dB
MAG-Maximum Available Gain-dB
fT-Gain Bandwidth Product-MHz
30
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
2
5
10
IC-Collector Current-mA
20
30
0.5
1
2
5
IC-Collector Current-mA
10
20 30
MAXIMUM AVAILABLE GAIN, INSERTION
GAIN vs. FREQUENCY
VCE = 6 V
fC = 10 mA
MAG
20
|S21e|2
10
0
0.1
0.2
0.5
1.0
f-Frequency-GHz
2.0 3.0
NE68039 / 2SC4095
NOISE FIGURE vs.
COLLECTOR CURRENT
7
VCE = 10 V
f = 2.0 GHz
NF-Noise Figure-dB
6
5
4
3
2
1
0
0.5
1
5
10
50 70
IC-Collector Current-mA
S-PARAMETER
VCE = 6.0 V, IC = 3.0 mA, ZO = 50
f (MHz)
S11
S11
S21
200
0.870
24.2
9.193
400
0.747
44.6
7.780
600
0.628
59.8
800
0.516
1000
1200
S21
S12
S12
S22
S22
155.6
0.031
53.6
0.946
12.8
136.6
0.040
66.2
0.876
20.7
7.058
122.1
0.064
54.7
0.816
26.4
75.1
5.675
109.4
0.066
56.0
0.743
30.9
0.400
87.7
5.180
99.6
0.090
49.4
0.689
33.0
0.327
103.4
4.269
89.8
0.084
47.9
0.654
35.7
1400
0.262
118.7
3.950
81.7
0.106
48.5
0.604
37.7
1600
0.231
135.5
3.406
74.0
0.105
42.1
0.581
41.5
1800
0.205
155.3
3.290
66.4
0.126
46.4
0.548
43.9
2000
0.196
170.6
2.867
60.8
0.124
40.9
0.529
47.1
S21
S21
S12
S12
S22
S22
VCE 6.0 V, IC = 10.0 mA, ZO = 50
f (MHz)
S11
S11
200
0.671
43.5
18.685
137.9
0.023
52.1
0.832
19.0
400
0.458
68.7
12.702
115.2
0.029
62.2
0.710
23.9
600
0.319
83.7
9.895
102.8
0.046
54.4
0.649
26.0
800
.0239
101.9
7.275
92.3
0.049
63.1
0.600
27.5
1000
0.172
119.3
6.261
85.1
0.067
58.6
0.578
28.4
1200
0.149
141.4
5.038
77.4
0.070
57.9
0.559
30.3
1400
0.131
163.0
4.597
71.0
0.088
56.1
0.527
32.5
1600
0.132
179.6
3.927
64.8
0.094
54.0
0.514
35.7
1800
0.150
160.0
3.743
58.8
0.113
55.3
0.494
38.1
2000
0.163
150.1
3.233
54.5
0.115
50.0
0.478
41.6
3
NE68039 / 2SC4095
S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 6 V, IC = 10/3 mA, freq. = 0.2 to 2 GHz (Step 200 MHz)
0.1
6
0.3
4
1.4
1.6
1.8
2.0
0.6
5
0.
T
EN
0.
18
32
0.
50
N
0.4
0
3.
4
0.
0.6
O
0.8
1
0.2
9
0.2
30
4.0
1.0
0
1.
6.0
0.6
20
10
5.0
4.0
3.0
1.8
2.0
1.6
1.4
1.2
0.9
1.0
0.7
0.8
0.6
0.5
0.4
0.1
0
1.
1.0
4.0
)
5.0
(
E
NC
TA X
AC −J––O–
RE
–Z
0.8
0
E
IV
AT
0.6
3.
0
−4
NE
G
0.4
5
0.
0. 31
19
0.
4
0. 3
07
30
1.8
2.0
0.
1.6
1.4
0.35
0.15
−70
1.2
4
0.3
6
0.1
0.36
0.14
−80
1.0
0
0.9
3
0.3 7
−6
−90
0.37
0.13
0.38
0.12
0.8
0.1
0.7
32
0.2
−1
0.6
0.
18
0
−5
0.39
0.11
−100
0
−11
0.40
0.10
0.4
0.0 2
8
0
−1
2
0.4
1
0.0
9
CONDITION VCE = 6 V
IC = 10/3 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
90°
0.
S21e-FREQUENCY
120°
10
0.2 GHz
0
.
2
9
0.2
1
0.3
−3
0.2 0
0
0
4
0.
IC = 3 mA
0.2
8
0.2
2
−20
IC = 3 mA
2 GHz
0.27
0.23
8
0.
0.2 GHz
−10
0.4
0.6
0.2
S22e
IC = 10 mA
IC = 10 mA
50
0.2
)
0.26
0.24
(
S11e
50
0. 25
0.25
0.3
0.4
20
REACTANCE COMPONENT
R
––––
0.2
ZO
0
0.2
10
20
0.3
0.2
0.8
2 GHz
0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20
( –Z–+–J–XTANCE CO
) MPO
0.1
0.3 7
3
600
0
0.2 0
0.3
WAVELE
NG
70
0.2
0.1
0.3
0.15
0.35
1.2
0.9
1.0
0.14
0.36
80
40
THS
0
0.01
0.49
0.02 TOWARD
0.48
0
0.49
0.0 GENE
0.01
7
0.48
3
RA
0.4
0.02 RD LOAD
0.4
0.0TOR
3 HS TOWLAE OF REFLECTION COEFFCIENT IN
6
7
.0
DEG
0NGT ANG
4
0.4
REE
0
E
0.4
6
L
0
S
.0W4AVE −1
6
0 .0
0
5
15
0.4 5
0.4 5
50
0
−1
.0
5
0
0.
0
44
POS
.
T
0.1
N
14 0.4 6
0 06 40
E
ITIV
ON
0
ER
4
MP
0. −1
EA
CO
C
0.13
0.37
90
19
0. 31
0.
07
0. 3
4
0. 0
13
0.12
0.38
0.11
0.39
100
0.7
8
0.0 2
0.4 20
1
0.10
0.40
110
0.8
9
0.0
1
0.4
S12e-FREQUENCY
CONDITION VCE = 6 V
IC = 10/3 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
90°
120°
60°
60°
IC = 10 mA
150°
IC = 10 mA
0.2 GHz
30°
150°
S12e
S21e
180°
IC = 3 mA
2GHz
0
4
8
12
−150°
20
−60°
−90°
30°
IC = 3 mA
0.2 GHz
0° 180°
−30°
−120°
4
16
2GHz
0
0.04 0.08 0.12 0.16 0.2
−150°
0°
−30°
−60°
−120°
−90°
NE68039 / 2SC4095
RECOMMENDED SOLDERING CONDTITIONS
The following conditions (see table below) must be met then soldering this product. Please consult with our sales
offices in case other soldering process is used, or in case soldering is done under different contions.
TYPES OF SURFACE MOUNT DEVICE
For more details, refer to our document “SMT MANUAL” (IEI-1207).
NE68039 / 2SC4095
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak packageʼs surface temperature: 230 C or below,
Reflow time:
30 seconds or below (210 C or higher),
Number of reflow process:
1, Exposure limit*: None
IR30-00-1
VPS
Peak packageʼs surface temperature: 215 C or below,
Reflow time:
40 seconds or below (200 C or higher),
Number of reflow process:
1, Exposure limit*: None
VP15-00-1
Wave soldering
Solder temperature:
Flow time:
Number of reflow process:
260 C or below,
10 seconds or below,
1, Exposure limit*: None
WS60-00-1
Partial heating method
Terminal temperature:
Flow time:
Exposure limit*:
300 C or below,
3 seconds or below,
None
*: Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 C and relative humidity at 65 % or less.
Note: Do not apply more than a single process at once, except for “Partial heating method”.
5
NOTICE
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