HSB83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0187-0200Z (Previous: ADE-208-489A) Rev.2.00 Mar.22.2004 Features • High reverse voltage. (VR = 250 V) • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSB83 F7 CMPAK Pin Arrangement 3 2 1 (Top View) Rev.2.00, Mar.22.2004, page 1 of 4 1. NC 2. Anode 3. Cathode HSB83 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current VRM VR IFM IFSM *1 300 250 300 2 V V mA A Average rectified current Junction temperature Storage temperature IO Tj Tstg 100 125 –55 to +125 mA °C °C Note: 1. Value at duration of 10 ms. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF Reverse current IR1 IR2 C trr — — — — — — — — — — 1.2 0.2 100 3.0 100 V µA IF = 100 mA VR = 250 V VR = 300 V VR = 0 V, f = 1 MHz IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω Capacitance Reverse recovery time Rev.2.00, Mar.22.2004, page 2 of 4 pF ns HSB83 Main Characteristics 10–6 10–2 10–4 Reverse current IR (A) Forward current IF (A) 10–3 10–5 10–6 10–7 10–8 10–7 10–8 10–9 10–9 10–10 0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f = 1MHz 10 Capacitance C (pF) 10–10 1.0 0.1 1.0 10 100 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.2.00, Mar.22.2004, page 3 of 4 HSB83 Package Dimensions As of January, 2003 0.1 0.3 +– 0.05 (0.65) (0.65) (0.2) 1.3 ± 0.2 0.9 ± 0.1 0.1 0.3 +– 0.05 + 0.1 0.16 – 0.06 2.1 ± 0.3 0.1 0.3 +– 0.05 (0.425) 1.25 ± 0.1 2.0 ± 0.2 (0.425) Unit: mm 0 – 0.1 Package Code JEDEC JEITA Mass (reference value) Rev.2.00, Mar.22.2004, page 4 of 4 CMPAK — Conforms 0.006 g Sales Strategic Planning Div. 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