RENESAS HSK83

HSK83
Silicon Epitaxial Planar Diode for High Voltage Switching
REJ03G0191-0400Z
(Previous: ADE-208-169C)
Rev.4.00
Mar.22.2004
Features
• High reverse voltage. (VR = 250 V)
• LLD package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Cathode band
2nd band
Package Code
HSK83
White
Verdure
LLD
Pin Arrangement
Cathode band
1
2
2nd. band
Cathode band
1
2
2nd. band
Rev.4.00, Mar.22.2004, page 1 of 4
1. Cathode
2. Anode
HSK83
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
VRM
VR
IFM
IFSM *1
300
250
625
1
V
V
mA
A
Average rectified current
Junction temperature
Storage temperature
IO
Tj
Tstg
150
175
–65 to +175
mA
°C
°C
Note:
1. Value at duration of 1s.
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF
Reverse current
IR1
IR2
C
trr
—
—
—
—
—
—
—
—
1.5
—
1.0
0.1
100
—
100
V
µA
IF = 100 mA
VR = 250 V
VR = 300 V
VR = 0 V, f = 1 MHz
IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω
Capacitance
Reverse recovery time
Rev.4.00, Mar.22.2004, page 2 of 4
pF
ns
HSK83
Main Characteristics
10–5
10–1
Reverse current IR (A)
10
–2
Ta
=
Ta = 125°C
Ta = 75°C
25°C
Ta =
-25°C
Forward current IF (A)
Ta = 75°C
10–3
10–4
0
0.2
0.4
0.6
0.8
1.0
1.2
Ta = 50°C
10–7
Ta = 25°C
10
–8
10–9
0
50
100
150
200
250
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
10
–6
1.0
0.1
1.0
10
100
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Rev.4.00, Mar.22.2004, page 3 of 4
HSK83
Package Dimensions
As of January, 2003
Unit: mm
φ 1.35 ± 0.1*
3.5
* HSK122: φ 1.4 ± 0.1 type
Rev.4.00, Mar.22.2004, page 4 of 4
+0.1
–0.2
(0.35 Typ)
Package Code
JEDEC
JEITA
Mass (reference value)
LLD
—
—
0.027 g
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