HSK83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0191-0400Z (Previous: ADE-208-169C) Rev.4.00 Mar.22.2004 Features • High reverse voltage. (VR = 250 V) • LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Cathode band 2nd band Package Code HSK83 White Verdure LLD Pin Arrangement Cathode band 1 2 2nd. band Cathode band 1 2 2nd. band Rev.4.00, Mar.22.2004, page 1 of 4 1. Cathode 2. Anode HSK83 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current VRM VR IFM IFSM *1 300 250 625 1 V V mA A Average rectified current Junction temperature Storage temperature IO Tj Tstg 150 175 –65 to +175 mA °C °C Note: 1. Value at duration of 1s. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF Reverse current IR1 IR2 C trr — — — — — — — — 1.5 — 1.0 0.1 100 — 100 V µA IF = 100 mA VR = 250 V VR = 300 V VR = 0 V, f = 1 MHz IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω Capacitance Reverse recovery time Rev.4.00, Mar.22.2004, page 2 of 4 pF ns HSK83 Main Characteristics 10–5 10–1 Reverse current IR (A) 10 –2 Ta = Ta = 125°C Ta = 75°C 25°C Ta = -25°C Forward current IF (A) Ta = 75°C 10–3 10–4 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta = 50°C 10–7 Ta = 25°C 10 –8 10–9 0 50 100 150 200 250 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f = 1MHz 10 Capacitance C (pF) 10 –6 1.0 0.1 1.0 10 100 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.4.00, Mar.22.2004, page 3 of 4 HSK83 Package Dimensions As of January, 2003 Unit: mm φ 1.35 ± 0.1* 3.5 * HSK122: φ 1.4 ± 0.1 type Rev.4.00, Mar.22.2004, page 4 of 4 +0.1 –0.2 (0.35 Typ) Package Code JEDEC JEITA Mass (reference value) LLD — — 0.027 g Sales Strategic Planning Div. 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