HSK120 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0192-0400Z (Previous: ADE-208-171C) Rev.4.00 Mar.22.2004 Features • Low reverse recovery time. (trr = 3.0 ns max) • LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSK120 White LLD Pin Arrangement Cathode band 1 2 Cathode band 1 Rev.4.00, Mar.22.2004, page 1 of 4 2 1. Cathode 2. Anode HSK120 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current VRM VR IFM IFSM *1 70 60 450 4 V V mA A Average rectified current Junction temperature Storage temperature IO Tj Tstg 150 175 –65 to +175 mA °C °C Note: 1. Within 1µs forward surge current. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF Reverse voltage Reverse current Capacitance Reverse recovery time VR IR C trr — 70 — — — — — — — — 0.8 — 0.1 3.0 3.0 V V µA pF ns IF = 10 mA IR = 5 µA VR = 60 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50 Ω, Irr = 0.1IR Rev.4.00, Mar.22.2004, page 2 of 4 HSK120 Main Characteristics 10–1 10–4 Ta = 125°C Reverse current IR (A) 10–2 10 Ta =1 Ta = 25°C 75° C Ta = 25°C Ta = -25°C Forward current IF (A) 10–5 –3 10–6 10–7 Ta = 25°C 10 10–4 0 0.2 0.4 0.6 0.8 1.0 1.2 –8 10–9 0 20 40 60 80 100 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f = 1MHz 10 Capacitance C (pF) Ta = 75°C 1.0 0.1 1.0 10 100 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.4.00, Mar.22.2004, page 3 of 4 HSK120 Package Dimensions As of January, 2003 Unit: mm φ 1.35 ± 0.1* 3.5 * HSK122: φ 1.4 ± 0.1 type Rev.4.00, Mar.22.2004, page 4 of 4 +0.1 –0.2 (0.35 Typ) Package Code JEDEC JEITA Mass (reference value) LLD — — 0.027 g Sales Strategic Planning Div. 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