Application Note

BeRex
BMT332
Application Note
RF MMIC Innovator
www.berex.com
[Classification] Application Note
[Date] 2014.01
[Revision No.] Rev.A
[Measuring Instruments]
- NA_Agilent E5071B
- SA_Agilent N9020A
- SG_Agilent 4438C
- SG_IFR 3416
High Power Amp BMT332
FR4 Application Note
BeRex
High Power Amplifier
1
F-RD-1401
BeRex
BMT332
Application Note
Contents
RF MMIC INNOVATOR
WWW.BEREX.COM ............................................................. 1
1. 850MHZ APPLICATION ..................................................................................................................... 3
1.1 850MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ............................................................. 4
1.2 850MHZ TEST RESULT(ACPR) ..................................................................................................... 5
2. 1750MHZ APPLICATION ................................................................................................................... 6
2.1 1750MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) .......................................................... 7
2.2 1750MHZ TEST RESULT(ACPR) .................................................................................................. 8
3. 1850MHZ APPLICATION ................................................................................................................... 9
3.1 1850MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ......................................................... 10
3.2 1850MHZ TEST RESULT(ACPR) ................................................................................................ 11
4. 1960MHZ APPLICATION ................................................................................................................. 12
4.1 1960MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ......................................................... 13
4.2 1960MHZ TEST RESULT(ACPR) ................................................................................................. 14
5. 2140MHZ APPLICATION ................................................................................................................. 15
5.1 2140MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ......................................................... 16
5.2 2140MHZ TEST RESULT(ACPR) ................................................................................................. 17
6. 2350MHZ APPLICATION ................................................................................................................. 18
6.1 2350MHZ TEST RESULT(S-PARAMETER, OIP3, P1, NF) ......................................................... 19
6.2 2350MHZ TEST RESULT(ACLR) ................................................................................................. 20
0---END---0
BeRex
High Power Amplifier
2
F-RD-1401
BeRex
BMT332
Application Note
1. BT332 _ 850MHz Application Note
Schematic Diagram
BOM
Marks
C1
1206
10uF
C2
0603
N/A
C3
0603
68pF
C4
0603
1nF
C5
0603
N/A
C6
0603
3.3pF
C7
0603
100pF
C8
0603
5pF
C9
0603
N/A
C10
0603
10pF
C11
0603
100pF
C12
0603
1uF
C13
0603
100pF
C14
0603
1nF
C15
1206
10uF
L1
0603
5.6nH
L2
0603
22nH
Tantalum
High Q
Tantalum
L3
1008
22nH
Coil
R1
0603
100 Ω
±5%
R2
0603
270 Ω
±5%
PCB Diagram
Notice
Below information is subject to change as
conditions of the substrate.
Reference
Object
Distance
Input pin
L1
7.8mm
Input pin
C8
5.3mm
Output pin
C10
8.8mm
Pin 16
C3
7.2mm
Pin 16
C6
2.0mm
Pin 20
C4
5.0mm
1. Pin 16 & 20 is used for Vce of the inner
bias circuit. To eliminate bias line
resonance you need above 10mm
transmission line and adjust the position
of C2, C3, C4 ,C5 and C6. Also you can
adjust spectrum regrowth about
bandwidth of signals which you want.
2. C10 : We recommend High-Q capacitor
for better output power performance.
In this document we used
‘10pF(251R14S100JV4, EIA 0603) of
Johanson Technology.
3. You could change C7 from 100 pF to 0
Ω or a line if you have other DC block
front of BMT332.
BeRex
High Power Amplifier
3
F-RD-1401
BeRex
BMT332
Application Note
1.1 BMT332_850MHz Test Result
Freq
Vcc
Iref
Icq
Gain
OIP3
[MHz]
[V]
[mA]
[mA]
[dB]
[dBm]
850
5
32
671
33.4
49
(1)
P1dB
IRL
ORL
NF
[dBm]
[dB]
[dB]
[dB]
33
23.5
10.5
7.7
(1) OIP3 was tested @Pout=23dBm/tone (CW) 1MHz offset
BeRex
High Power Amplifier
4
F-RD-1401
BeRex
BMT332
Application Note
1.2 BT332_850MHz ACLR Test Result
3GPP WCDMA TM1 +64DPCH 1FA
3GPP WCDMA TM1 +64DPCH 4FA
3GPP LTE E-TM3.1 5MHz
3GPP LTE E-TM3.1 10MHz
3GPP LTE E-TM3.1 15MHz
3GPP LTE E-TM3.1 20MHz
BeRex
High Power Amplifier
5
F-RD-1401
BeRex
BMT332
Application Note
2. BMT332_1750MHz Application Note
Schematic Diagram
BOM
Marks
C1
1206
N/A
C2
0603
1nF
C3
0603
1nF
C4
0603
N/A
C5
0603
1nF
C6
0603
2pF
C7
0603
0Ω
C8
0603
3.3pF
C9
0603
2.7pF
C10
0603
4.3pF
C11
0603
3.9pF
C12
0603
1uF
C13
0603
100pF
C14
0603
1nF
C15
1206
10uF
L1
0603
N/A
L2
0603
12nH
Tantalum
High Q
Tantalum
L3
1008
22nH
Coil
R1
0603
100 Ω
±5%
R2
0603
270 Ω
±5%
PCB Diagram
Notice
Below information is subject to change as
conditions of the substrate.
Reference
Object
Distance
Input pin
C8
5.8mm
Input pin
C9
3.9mm
Output pin
C10
2.8mm
Pin 16
C3
7.2mm
Pin 16
C6
2.0mm
Pin 16
C5
1.0mm
Pin 20
C2
10.6mm
1. Pin 16 & 20 is used for Vce of the inner
bias circuit. To eliminate bias line resonance
you need above 10mm transmission line
and adjust the position of C2, C3, C4 ,C5
and C6. Also you can adjust spectrum
regrowth about bandwidth of signals which
you want.
2. C10 : We recommend High-Q capacitor
for better output power performance. In
this document we used
‘4.3pF(251R14S4R3BV4, EIA 0603) of
Johanson Technology.
3. C7 : Non-critical 0 Ω
BeRex
High Power Amplifier
6
F-RD-1401
BeRex
BMT332
Application Note
2.1 BMT332 1750MHz Test Result
Freq
Vcc
Iref
Icq
Gain
OIP3
[MHz]
[V]
[mA]
[mA]
[dB]
[dBm]
1750
5
32
669
27.6
47
(1)
P1dB
IRL
ORL
NF
[dBm]
[dB]
[dB]
[dB]
33.5
28.9
11.1
6.2
(1) OIP3 was tested @Pout=23dBm/tone (CW) 1MHz offset
BeRex
High Power Amplifier
7
F-RD-1401
BeRex
BMT332
Application Note
2.2 BMT332 1750MHz ACPR Test Result
3GPP WCDMA TM1 +64DPCH 1FA
3GPP WCDMA TM1 +64DPCH 4FA
3GPP LTE E-TM3.1 5MHz
3GPP LTE E-TM3.1 10MHz
3GPP LTE E-TM3.1 15MHz
3GPP LTE E-TM3.1 20MHz
BeRex
High Power Amplifier
8
F-RD-1401
BeRex
BMT332
Application Note
3. BMT332 1850MHz Application Note
Schematic Diagram
BOM
Marks
C1
1206
N/A
C2
0603
1nF
C3
0603
1nF
C4
0603
N/A
C5
0603
1nF
C6
0603
3pF
C7
0603
0Ω
C8
0603
3.3pF
C9
0603
2.7pF
C10
0603
4.3pF
C11
0603
3.9pF
C12
0603
1uF
C13
0603
100pF
C14
0603
1nF
C15
1206
10uF
L1
0603
N/A
L2
0603
12nH
Tantalum
High Q
Tantalum
L3
1008
12nH
Coil
R1
0603
100 Ω
±5%
R2
0603
270 Ω
±5%
PCB Diagram
Notice
Below information is subject to change as
conditions of the substrate.
Reference
Object
Distance
Input pin
C8
5.0mm
Input pin
C9
3.5mm
Output pin
C10
2.4mm
Pin 16
C3
5.5mm
Pin 16
C6
2.0mm
Pin 19
C5
1.0mm
Pin 20
C2
10.6mm
1. Pin 16 & 20 is used for Vce of the inner
bias circuit. To eliminate bias line resonance
you need above 10mm transmission line
and adjust the position of C2, C3, C4 ,C5
and C6. Also you can adjust spectrum
regrowth about bandwidth of signals which
you want.
2. C10 : We recommend High-Q capacitor
for better output power performance. In
this document we used
‘4.3pF(251R14S4R3BV4, EIA 0603) of
Johanson Technology.
3. C7 : Non-critical 0 Ω
BeRex
High Power Amplifier
9
F-RD-1401
BeRex
BMT332
Application Note
3.1 BMT332 1850MHz Test Result
Freq
Vcc
Iref
Icq
Gain
OIP3
[MHz]
[V]
[mA]
[mA]
[dB]
[dBm]
1850
5
32
669
26.9
47
(1)
P1dB
IRL
ORL
NF
[dBm]
[dB]
[dB]
[dB]
33.5
25
12.9
6.5
(1) OIP3 was tested @Pout=23dBm/tone (CW) 1MHz offset
BeRex
High Power Amplifier
10
F-RD-1401
BeRex
BMT332
Application Note
3.2 BMT332 1850MHz ACPR Test Result
3GPP WCDMA TM1 +64DPCH 1FA
3GPP WCDMA TM1 +64DPCH 4FA
3GPP LTE E-TM3.1 5MHz
3GPP LTE E-TM3.1 10MHz
3GPP LTE E-TM3.1 15MHz
3GPP LTE E-TM3.1 20MHz
BeRex
High Power Amplifier
11
F-RD-1401
BeRex
BMT332
Application Note
4. BMT332 1960MHz Application Note
Schematic Diagram
BOM
Marks
C1
1206
N/A
C2
0603
1nF
C3
0603
1nF
C4
0603
N/A
C5
0603
1nF
C6
0603
2pF
C7
0603
0Ω
C8
0603
3.3pF
C9
0603
2.7pF
C10
0603
4.3pF
C11
0603
3.9pF
C12
0603
1uF
C13
0603
100pF
C14
0603
1nF
C15
1206
10uF
L1
0603
N/A
L2
0603
12nH
Tantalum
High Q
Tantalum
L3
1008
12nH
Coil
R1
0603
100 Ω
±5%
R2
0603
270 Ω
±5%
PCB Diagram
Notice
Below information is subject to change as
conditions of the substrate.
Reference
Object
Distance
Input pin
C8
5.0mm
Input pin
C9
3.0mm
Output pin
C10
2.0mm
Pin 16
C3
5.0mm
Pin 16
C6
2.0mm
Pin 19
C5
1.0mm
Pin 20
C2
10.6mm
1. Pin 16 & 20 is used for Vce of the inner
bias circuit. To eliminate bias line resonance
you need above 10mm transmission line
and adjust the position of C2, C3, C4 ,C5
and C6. Also you can adjust spectrum
regrowth about bandwidth of signals which
you want.
2. . C10 : We recommend High-Q capacitor
for better output power performance. In
this document we used
‘4.3pF(251R14S4R3BV4, EIA 0603) of
Johanson Technology.
3. C7 : Non-critical 0 Ω
BeRex
High Power Amplifier
12
F-RD-1401
BeRex
BMT332
Application Note
4.1 BMT332 1960MHz Test Result
Freq
Vcc
Iref
Icq
Gain
[MHz]
[V]
[mA]
[mA]
[dB]
1960
5
32
663
26.6
OIP3
[dBm]
47
(1)
P1dB
IRL
ORL
NF
[dBm]
[dB]
[dB]
[dB]
33.5
26.1
13.2
6.4
(1) OIP3 was tested @Pout=23dBm/tone (CW) 1MHz offset
BeRex
High Power Amplifier
13
F-RD-1401
BeRex
BMT332
Application Note
4.2 BMT332 1960MHz ACLR Test Result
3GPP WCDMA TM1 +64DPCH 1FA
3GPP WCDMA TM1 +64DPCH 4FA
3GPP LTE E-TM3.1 5MHz
3GPP LTE E-TM3.1 10MHz
3GPP LTE E-TM3.1 15MHz
3GPP LTE E-TM3.1 20MHz
BeRex
High Power Amplifier
14
F-RD-1401
BeRex
BMT332
Application Note
5. BMT332 2140MHz Application Note
Schematic Diagram
BOM
Marks
C1
1206
10uF
C2
0603
N/A
C3
0603
1nF
C4
0603
1nF
C5
0603
1nF
C6
0603
3pF
C7
0603
0Ω
C8
0603
3pF
C9
0603
2.7pF
C10
0603
3.9pF
C11
0603
4.3pF
C12
0603
1uF
C13
0603
100pF
C14
0603
1nF
C15
1206
10uF
L1
0603
N/A
L2
0603
12nH
Tantalum
High Q
Tantalum
L3
1008
10nH
Coil
R1
0603
100 Ω
±5%
R2
0603
270 Ω
±5%
PCB Diagram
Notice
Below information is subject to change as
conditions of the substrate.
Reference
Object
Distance
Input pin
C8
4.1mm
Input pin
C9
2.2mm
Output pin
C10
1.9mm
Pin 16
C3
3.0mm
Pin 16
C6
2.0mm
Pin 19
C5
1.0mm
Pin 20
C2
5.0mm
1. Pin 16 & 20 is used for Vce of the inner
bias circuit. To eliminate bias line resonance
you need above 10mm transmission line
and adjust the position of C2, C3, C4 ,C5
and C6. Also you can adjust spectrum
regrowth about bandwidth of signals which
you want.
2.. C10 : We recommend High-Q capacitor
for better output power performance. In
this document we used
‘3.9pF(251R14S3R9BV4, EIA 0603) of
Johanson Technology.
3. C7 : Non-critical 0 Ω
BeRex
High Power Amplifier
15
F-RD-1401
BeRex
BMT332
Application Note
5.1 BMT332 2140MHz Test Result
Freq
Vcc
Iref
Icq
Gain
OIP3
[MHz]
[V]
[mA]
[mA]
[dB]
[dBm]
2140
5
32
667
26
47
(1)
P1dB
IRL
ORL
NF
[dBm]
[dB]
[dB]
[dB]
33.2
18.5
11.9
6.8
(1) OIP3 was tested @Pout=23dBm/tone (CW) 1MHz offset
BeRex
High Power Amplifier
16
F-RD-1401
BeRex
BMT332
Application Note
5.2 BMT332 2140MHz ACLR Test Result
3GPP WCDMA TM1 +64DPCH 1FA
3GPP WCDMA TM1 +64DPCH 4FA
3GPP LTE E-TM3.1 5MHz
3GPP LTE E-TM3.1 10MHz
3GPP LTE E-TM3.1 15MHz
3GPP LTE E-TM3.1 20MHz
BeRex
High Power Amplifier
17
F-RD-1401
BeRex
BMT332
Application Note
6. BMT332 2350MHz Application Note
Schematic Diagram
BOM
Marks
C1
1206
10uF
C2
0603
N/A
C3
0603
N/A
C4
0603
0.75pF
C5
0603
1nF
C6
0603
1nF
C7
0603
0Ω
C8
0603
2.2pF
C9
0603
2.7pF
C10
0603
3.3pF
C11
0603
22pF
C12
0603
1uF
C13
0603
100pF
C14
0603
1nF
C15
1206
10uF
L1
0603
N/A
L2
0603
15nH
Tantalum
High Q
Tantalum
L3
1008
10nH
Coil
R1
0603
100 Ω
±5%
R2
0603
270 Ω
±5%
PCB Diagram
Notice
Below information is subject to change as
conditions of the substrate.
Reference
Object
Distance
Input pin
C8
3.6mm
Input pin
C9
0.8mm
Output pin
C10
1.4mm
Pin 16
C6
2.0mm
Pin 19
C5
1.0mm
Pin 20
C4
5.0mm
1. Pin 16 & 20 is used for Vce of the inner
bias circuit. To eliminate bias line resonance
you need above 10mm transmission line and
adjust the position of C2, C3, C4 ,C5 and C6.
Also you can adjust spectrum regrowth
about bandwidth of signals which you want.
2.C10 : We recommend High-Q capacitor for
better output power performance. In this
document we used ‘3.3pF(251R14S3R3BV4,
EIA 0603) of Johanson Technology.
3. C7 : Non-critical 0 Ω
BeRex
High Power Amplifier
18
F-RD-1401
BeRex
BMT332
Application Note
6.1 BMT332 2350MHz Test Result
Freq
Vcc
Iref
Icq
Gain
OIP3
[MHz]
[V]
[mA]
[mA]
[dB]
[dBm]
2350
5
32
667
26
47
(1)
P1dB
IRL
ORL
NF
[dBm]
[dB]
[dB]
[dB]
33.2
18.5
11.9
5.8
(1) OIP3 was tested @Pout=23dBm/tone (CW) 1MHz offset
BeRex
High Power Amplifier
19
F-RD-1401
BeRex
BMT332
Application Note
6.2 BMT332 2140MHz ACLR Test Result
3GPP WCDMA TM1 +64DPCH 1FA
3GPP WCDMA TM1 +64DPCH 4FA
3GPP LTE E-TM3.1 5MHz
3GPP LTE E-TM3.1 10MHz
3GPP LTE E-TM3.1 15MHz
3GPP LTE E-TM3.1 20MHz
BeRex
High Power Amplifier
20
F-RD-1401