MFC110 Thyristor/Diode Modules Features ! Isolated mounting base 2500V~ ! Pressure contact technology with VDSMVRSM VDRM,VRRM Type & Outline 1300 V 1200 V MFC110-12-223F3TD 1500 V 1400 V MFC110-14-223F3TD 1700 V 1600 V MFC110-16-223F3TD 1900 V 1800 V MFC110-18-223F3TD increased power cycling capability ! Space and weight savings Typical Applications ! AC/DC Motor drives ! Various rectifiers ! DC supply for PWM inverter VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(°C) UNIT Min IT(AV) Mean on-state current IT(RMS) RMS on-state current IDRM IRRM Repetitive peak current ITSM Surge on-state current 2 It VTO rT VTM 2 I T for fusing coordination 180° half sine wave 50Hz Single side cooled,Tc=85°C Type Max 125 110 A 125 173 A at VDRM at VRRM 125 12 mA 10ms half sine wave VR=60%VRRM 125 2.80 39 Threshold voltage 125 On-state slop resistance KA 2 A s*103 0.8 V 2.29 mΩ 1.83 V Peak on-state voltage ITM=330A 25 Gate control delay time VD=0.67VDRM 25 dv/dt Critical rate of rise of off-state voltage VDM=67%VDRM 125 800 V/µs di/dt Critical rate of rise of on-state current Gate source 1.5A tr ≤0.5µs Repetitive 125 100 A/µs 30 100 mA 0.7 2.5 V 10 120 mA 600 mA 0.25 V 6 mA Single side cooled 0.250 °C /W Single side cooled 0.15 °C /W tgr IGT Gate trigger current VGT Gate trigger voltage IH Holding current IL Latching current VGD Non-trigger gate voltage IGD Non-trigger gate current Rth(j-c) Rth(c-h) Viso Fm Thermal resistance Junction to case Thermal resistance case to heatsink Isolation voltage VA=12V, IA=1A 25 VA=12V,Gate source 1.5A tr ≤0.5µs,50HZ 25 VDM=VDRM 125 50Hz,R.M.S,t=1min,Iiso:1mA(MAX) 2 300 µs 2500 V Thermal connection torque(M5) 4.0 N·m Mounting torque(M6) 6.0 N·m Tvj junction temperature -40 125 Tstg Stored temperature -40 125 Wt Weight Outline http://www.tech-sem.com °C °C 172 g 223F3 Page 1 of 3 2013-07 MFC110 Max. junction To case Thermai Impedance Vs.Time Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts Peak On-state Voltage Vs.Peak On-state Current TJ=125°C time,S Fig.1 Fig.2 Max. Power Dissipation Vs.Mean On-state Current Max. case Temperature Vs.Mean On-state Current Case temperature,°C Max on-state dissipation,watts Instantaneous on-state currant,amperes Conduction Angle Mean on-state current,amperes Mean on-state current,amperes Fig.3 Fig.4 Max. case Temperature Vs.Mean On-state Current Max. Power Dissipation Vs.Mean On-state Current 360 360 Conduction Angle Case temperature,°C Max on-state dissipation,watts Conduction Angle Mean on-state current,amperes Mean on-state current,amperes Fig.5 http://www.tech-sem.com Conduction Angle Fig.6 Page 2 of 3 2013-07 MFC110 2.8 I2t39Vs.Time Surge Current 2.8 Vs.Cycles Maximum 2It(Kamps2,secs) Total peak half-sine surge current,kA 40 35 30 25 20 15 10 1 10 Time,m.seconds Cycles at 50Hz Fig.7 Fig.8 Gate characteristic at 25°C junction temperature Gate Trigger Zone at varies temperature -30°C Gate voltage,VGT Gate voltage,VGT V V -10°C Gate current,IGT A 25 °C 125°C Gate current,IGT Fig.9 mA Fig.10 Outline: 2 .8 0 .8 A1K2 K1 A2 K1 G1 http://www.tech-sem.com Page 3 of 3 2013-07