ETC KP500A1200V

KP500A1200V
国标型-普通晶闸管(平板式)
Chinese Type Fast Thyristors (Capsule Version)
L iu j in g re ct i f ie r c o . , L t d .
FEATURES
1). Center amplifying gate
2). Metal case with ceramic insulator
3). Low on-state and switching losses
TYPICAL APPLICATIONS
1). AC controllers
2). DC and AC motor control
3). Controlled rectifiers
IT(AV)
VDRM/VRRM
ITSM
I2t
1039A
1100~1800V
11 KA
605 103A2S
THE MAIN PARAMETERS
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Tj(℃)
O
Mean on-state current
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM&VRRM,tp=10ms
VDSM&VRSM= VDRM&VRRM+100V
125
IDRM
IRRM
Repetitive peak off-state current
Repetitive peak reverse current
VD= VDRM
VR= VRRM
125
ITSM
I2t
VTO
rT
VTM
dv/dt
Surge on-state current
I2T for fusing coordination
10ms half sine wave
VR=0.6VRRM
125
di/dt
Critical rate of rise of on-state current
Irm
trr
Qrr
IGT
VGT
IH
VGD
Reverse recovery current
Reverse recovery time
Recovery charge
Gate trigger current
Gate trigger voltage
Holding current
Non-trigger gate voltage
Rth(j-h)
Thermal resistance
Junction to heatsink
Fm
Tstg
Wt
Outline
Mounting force
Stored temperature
Weight
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VALUE
Type
180 half sine wave 50Hz Ths=55℃
125
Double side cooled,
Ths=101℃
IT(AV)
Threshold voltage
On-state slop resistance
Peak on-state voltage
Critical rate of rise of off-state voltage
Min
1100
Max
UNIT
1039
500
A
1800
V
40
mA
ITM=1700A, F=15KN
VDM=0.67VDRM
125
125
11
605
0.85
0.42
1.43
1000
VDM= 67%VDRM to1300A,
Gate pulse tr ≤0.5μs IGM=1.5A
125
500
A/μs
145
15
1087
300
2.5
250
A
μs
μC
0.035
℃ /W
20
140
KN
℃
125
ITM=700A,tp=1000μs,
di/dt=-20A/μs,
VR=50V
125
VA=12V, IA=1A
25
VDM=0.67VDRM
125
35
0.8
20
0.3
At 180°sine, double side cooled
Clamping force 15KN
10
-40
270
KA
2
A s*103
V
mΩ
V
V/μs
mA
V
mA
V
g
KT33cT
1/3
KP500A1200V
PERFORMANCE CURVES FIGURE
Max. junction To heatsink
Thermai Impedance Vs.Time
Peak On-state Voltage<.3(
Vs.Peak On-state Current
T J=125e
C
Transient thermal impedance°C/W
Instantaneous on-state voltage,volts
Instantaneous on-state currant,amperes
Fig.1
<.3(
Max. Power Dissipation
Vs.Mean On-state Current
Conduction Angle
Conduction Angle
Mean on-state current,amperes
Max. heatsink Temperature
Vs.Mean On-state Current
<.3(
Max. Power Dissipation
Vs.Mean On-state Current
<.3(
'&
360
Heatsink temperature,e
C
Conduction Angle
360
Fig.4
Max.on-state dissipation ,watts
Mean on-state current,amperes
Fig.3
Conduction Angle
'&
Mean on-state current,amperes
Mean on-state current,amperes
Fig.5
Fig.6
2
Surge Current
11 Vs.Cycles
I 605---11
t Vs.Time
700
Maximum I2t(Kamps2,secs)
Total peak half-sine surge current,kA
600
500
400
300
200
100
Cycles at 50Hz
Fig.7
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Heatsink temperature,e
C
Max.on-state dissipation ,watts
<.3(
Max. heatsink Temperature
Vs.Mean On-state Current
Fig.2
Time,seconds
1
10
Time,m.seconds
Fig.8
2/3
KP500A1200V
Gate characteristic at 25e
C junction temperature
PGM=100W
(100嘕 s spulse
PD[
Gate voltage,VGT ˈV
Gate voltage,VGT ,V
Gate Trigger Zone
at varies temperature
90$
PLQ
3*:
-30e
C
-10e
C
25e
C
125e
C
Gate current,IGT ,A
Gate current,IGTˈmA
Fig.10
Fig.9
26.5f0.5
OUTLINE
E-mail: rectifi[email protected]
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Zhejiang Province
Add: Wanao Industrial Zone, Yueqing city,
Zhejiang Province
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http://www.cnthyristor.com.cn
MSN: [email protected]
[email protected]
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