KP400A400~1000V Y30KPC 国标型-普通晶闸管(平板式) Chinese Type Phase Control Thyristors (Capsule Version) L iu j in g re ct i f ie r c o . , L t d . FEATURES 1). Center amplifying gate 2). Metal case with ceramic insulator 3). Low on-state and switching losses TYPICAL APPLICATIONS 1). AC controllers 2). DC and AC motor control 3). Controlled rectifiers IT(AV) VDRM/VRRM ITSM I2t 875A 400~1000V 9.0 KA 405 103A2S THE MAIN PARAMETERS SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) 180 half sine wave 50Hz Ths=55℃ Double side cooled, Ths=91℃ 125 O IT(AV) Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM,tp=10ms VDSM&VRSM= VDRM&VRRM+100V 125 IDRM IRRM Repetitive peak off-state current Repetitive peak reverse current VD= VDRM VR= VRRM 125 ITSM I2t VTO rT VTM dv/dt Surge on-state current I2T for fusing coordination 10ms half sine wave VR=0.6VRRM 125 di/dt Critical rate of rise of on-state current Irm trr Qrr IGT VGT IH VGD Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Reverse recovery current Reverse recovery time Recovery charge Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Rth(j-h) Thermal resistance Junction to heatsink Fm Tstg Wt Size Mounting force Stored temperature Weight Package box size www.china-liujing.com Min VALUE Type 400 Max UNIT 875 400 A 1000 V 30 mA ITM=1550A, F=7KN VDM=0.67VDRM 125 125 9.0 405 0.70 0.35 1.24 1000 VDM= 67%VDRM to1300A, Gate pulse tr ≤0.5μs IGM=1.5A 125 500 A/μs 137 15 1027 250 2.5 200 A μs μC 0.055 ℃ /W 10 140 KN ℃ 125 ITM=700A,tp=1000μs, di/dt=-20A/μs, VR=50V 125 VA=12V, IA=1A 25 VDM=0.67VDRM 125 35 0.8 20 0.3 At 180°sine, double side cooled Clamping force 7KN 5.3 -40 80 95×95×50 KA 2 A s*103 V mΩ V V/μs mA V mA V g mm 1/3 KP400A400-1000V PERFORMANCE CURVES FIGURE Max. junction To heatsink Thermai Impedance Vs.Time <.3& Peak On-state Voltage Vs.Peak On-state Current Instantaneous on-state voltage,volts Transient thermal impedance C/W T J=125e C Instantaneous on-state current,amperes Fig.1 <.3& Max. Power Dissipation Vs.Mean On-state Current Conduction Angle Mean on-state current,amperes Mean on-state current,amperes Fig.3 Fig.4 <.3& Max. Power Dissipation Vs.Mean On-state Current <.3& Max. heatsink Temperature Vs.Mean On-state Current '& 360 Conduction Angle 360 C heatsink temperature,e Max.on-state dissipation ,watts Conduction Angle heatsink temperature,e C Max.on-state dissipation ,watts <.3& Max. heatsink Temperature Vs.Mean On-state Current Conduction Angle '& Mean on-state current,amperes Mean on-state current,amperes Fig.5 Fig.6 Surge Current Vs.Cycles 9 2 450 400 Maximum I2t(Kamps2,secs) Total peak half-sine surge current,kA Fig.2 405---9 I t Vs.Time 350 300 250 200 150 100 Cycles at 50Hz Fig.7 www.china-liujing.com Time,seconds 1 10 Time,m.seconds Fig.8 2/3 KP400A400-1000V Gate characteristic at 25e C junction temperature Gate Trigger Zone at varies temperature 90$ PGM=100W (100嘕 s spulse PD[ Gate voltage,VGT V Gate voltageVGT ,V -30e C PLQ 25e C -10e C 125e C 3*: Gate curren,IGT,A Fig.9 Gate curren,IGT mA Fig.10 OUTLINE 40 E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 3/3