1/10 ■Structure Silicon Monolithic Integrated Circuit ■Product Name For DSC/DVC motor driving IC ■M o d e l N a m e BD5520GU ■Physical Dimension Fig.1 ■Block Diagram Fig.2 ■Terminal equivalent circuit diagram Fig.3 ■F u n c t i o n ･Power MOS-H bridge 4ch ･Comparator 2ch ･Under voltage protection circuit ･Over voltage protection circuit ・A radiation is not designed. REV. D 2/10 ■Physical Dimension Package type name：VCSP85H2 Fig-１ Physical Dimension （Unit：ｍｍ） REV. D 3/10 ■CHIP Backside PIN Arrangement E OUT2F IN2A CPI1 IN3A OUT3F D OUT2R VCC1 CPO1 IN3B OUT3R C GND1 IN1B IN2B IN4B GND2 B OUT1R CPO2 VCC2 OUT4R A OUT1F IN1A CPI2 IN4A OUT4F 1 2 3 4 5 ■Each terminal explanation PIN No. 1-A 2-A 3-A 4-A 5-A 1-B 2-B 3-B 4-B 5-B 1-C 2-C 3-C 4-C 5-C 1-D 2-D 3-D 4-D 5-D 1-E 2-E 3-E 4-E 5-E Terminal name OUT1F IN1A CPI2 IN4A OUT4F OUT1R CPO2 VCC2 OUT4R GND1 IN1B IN2B IN4B GND2 OUT2R VCC1 CPO1 IN3B OUT3R OUT2F IN2A CPI1 IN3A OUT3F Terminal explanation Forward output input input input A Forward output Reverse output Comparator2 output VCC voltage HBRIDGE CH4 Reverse output Ground HBRIDGE CH1 input B HBRIDGE CH2 input B HBRIDGE CH4 input B Ground HBRIDGE CH2 Reverse output VCC voltage Comparator1 output HBRIDGE CH3 input B HBRIDGE CH3 Reverse output HBRIDGE CH2 Forward output HBRIDGE CH2 input A Comparator1 input HBRIDGE CH3 input A HBRIDGE CH3 Forward output HBRIDGE CH1 HBRIDGE CH1 Comparator2 HBRIDGE CH4 HBRIDGE CH4 HBRIDGE CH1 REV. D 4/10 ■Measurement circuit diagram IN1A 2A 1A POWER DRIVER CH1 CONTROL LOGIC IN1B 2D 1B 2C 1C IN2A 1D 2E POWER DRIVER CH2 CONTROL LOGIC IN2B IN3A 3C 1E 4E 5E POWER DRIVER CH3 CONTROL LOGIC IN3B 4B 5D 4D 5C IN4A 5B 4A POWER DRIVER CH4 CONTROL LOGIC IN4B 5A 4C OUT1F VCC1 OUT1R GND1 OUT2R OUT2F OUT3F VCC2 OUT3R GND2 OUT4R OUT4F BIAS(LVS) 10[kΩ] CPI1 A1 3E 3D CPO1 VREF1 10[kΩ] CPI2 3A A2 3B Fig－2 Measurement circuit REV. D CPO2 5/10 ■Terminal equivalent circuit diagram HBRIDGE PIN PIN Equivalent circuit NO. NO. ２－Ａ (IN1A) １－Ａ VCC (OUT1F) ２－Ｃ 1－Ｂ (IN1B) (OUT1R) ２－Ｅ １－Ｅ (IN2A) VCC OUT*F OUT*R (OUT2F) 100k ３－Ｃ １－Ｄ (IN2B) ４－Ｅ Equivalent circuit (OUT2R) GND ５－Ｅ (IN3A) GND (OUT3F) ４－D ５－Ｄ (IN3B) (OUT3R) ４－A ５－Ａ (IN4A) (OUT4F) ４－C ５－Ｂ (IN4B) (OUT4R) AMP PIN NO. ３－Ｅ PIN Equivalent circuit NO. ３－Ｄ VCC (CPI1) Equivalent circuit VCC (CPO1) ３－Ａ ３－Ｂ (CPI2) (CPO2) GND GND Fig－3 Terminal equivalent circuit diagram REV. D 6/10 ■Absolute maximum ratings Item Symbol Standard value Unit Power supply voltage H Bridge output current1 H Bridge output current2 Power dissipation （*2） Operation temperature range Storage temperature range VCC 7.0 V IOUT1 200 mA IOUT2 300 mA PD 505 mW TOPR -10～70 ℃ TSTG -40～125 ℃ (*1) Instantaneous current (1[us] or less) (*2) Mounting board specification（Rohm standard board） Material：The glass fabric base epoxy Dimensions：50[mm]×58[mm]×1.75[mm] (8 layers) ■Operating condition Item Symbol Min. Typ. Max. Unit VCC power supply voltage VCC 2.4 5.0 5.5 V Comparator Pull up resistance CPR 7.5 - - kΩ Power dissipation Pd [mW] ■Power dissipation (Mounting board) 505 323 0 0 150 25 70 Ambient tempreture Ta（℃） Mounting board specification (Rohm standard board) Material：The glass fabric Size：550[mm]×58[mm]×1.75[mm] (8 layers) (8 layers) REV. D 7/10 ■Electrical characteristic ◎Circuit current(VCC=5.0[V],Ta=25[℃]except as otherwise noted) Item Current consumption at standby Current consumption when operating Standard value Symbol Unit Min. Typ. Max. - (1) 10 SICC BICC － 410 615 Notes μA At IN*A=IN*B=CPI*=L μA RL=Open, At IN*A=H, IN*B=L, CPI*=L The current that flows to comp pull up R is excluded. ◎AMP(VCC=5.0[V],Ta=25[℃]except as otherwise noted) Item Standard value Symbol Unit Min. Typ. Max. CPIIL － － 1 μA <COMP AMP (A1･A2)> Input current Output terminal voltage L Output leak current Reference voltage Hysteresis voltage CPOUTL － 0.07 0.3 V CPOUTIL CPBIAS CPHYS － 1.7 300 － 1.8 400 1 1.9 500 μA V mV Delay time R CPRISE － 0.4 10 μs Delay time F CPFALL － 0.4 10 μs Notes AMP*IN 0.0[V] At 10[kΩ]pull up R AMP*IN 3.3[V] AMP*IN 0→3.3[V] AMP*IN 3.3→0[V] At 10[kΩ]pull up R AMP*IN 0→3.3[V] At 10[kΩ]pull up R ◎H-BRIDGE(VC=5.0[V],Ta=25[℃] RL=OPEN,CL=0[pF]except as otherwise noted) Item Standard value Symbol Unit Min. Typ. Max. <Logic interface input (IN*A,IN*B)> L input voltage LVIL GND H input voltage LVIH 2.0 L input current LIIL -1 H input current LIIH 21.0 <Driver output (OUT*F,OUT*R)> － － － 35.0 0.5 VCC － 52.5 Output on resistance V V μA μA HRON － 0.85 1.4 Ω Output delay time HtRISE HtFALL － － 0.1 0.1 2 2 μsec μsec Minimum output pulse width HtMIN 400 － － nsec REV. D Notes L input =0[V] H input =3.3[V] The sum of on resistance at the top and bottom I=100[mA] output pulse width 1/2tMIN more 8/10 ■Electrical characteristic ◎Power-supply voltage detection circuit(VCC=5.0[V],Ta=25[℃] except as otherwise noted) Item Standard value Symbol Start up time StartTime <Under voltage detection circuit > LVS Vth+ Threshold voltage LVS VthHysteresis voltage LVS HYS Operation lower bound LVS OP voltage <Over voltage detection circuit> Threshold voltage HVS Vth Unit Min. Typ. Max. - 4.0 10.0 μs 2.20 2.10 50 2.30 2.20 100 2.40 2.30 150 V V mV － － 1 V 6.35 6.50 6.65 V Notes Stand by→Driver ON time ◎Logic input truth table Input signal Output singal IN*A IN*B OUT*F OUT*R ・Comparator ・voltage detection circuit H L H L Operation H H L L Operation L H L H Operation L L Hiz Hiz Ready (※1)When all ch is a ready state, it becomes a standby. REV. D 9/10 ■ Directions 1．Absolute maximum ratings This IC might be destroyed when the absolute maximum ratings, such as impressed voltages (VC,PVCC,VDD) or the operating temperature range (TOPR) is exceeded, and whether the destruction is short circuit mode or open circuit mode cannot be specified. Please take into consideration the physical countermeasures for safety, such as fusing, if a particular mode that exceeds the absolute maximum rating is assumed. 2．Reverse polarity connection Connecting the power line to the IC in reverse polarity (from that recommended) will damage the part. Please utilize the direction protection device as a diode in the supply line. 3．Power supply line Due to switching and EMI noise generated by magnetic components (inductors and motors), using electrolytic and ceramic suppress filter capacitors close to the IC power input terminals (Vcc and GND) is recommended. Please note: the electrolytic capacitor value decreases at lower temperatures. 4．GND line The ground line is where the lowest potential and transient voltages are connected to the IC. 5．Thermal design Do not exceed the power dissipation (Pd) of the package specification rating under actual operation, and please design enough temperature margins. (Refer to page 6.) 6．Short circuit mode between terminals and wrong mounting Do not mount the IC in the wrong direction and be careful about the reverse-connection of the power connector. Moreover, this IC might be destroyed when the dust short the terminals between them or GND. 7．Radiation Strong electromagnetic radiation can cause operation failures. 8．ASO(Area of Safety Operation.) Do not exceed the maximum ASO and the absolute maximum ratings of the output driver. 9．TSD(Thermal shut-down) The TSD is activated when the junction temperature (Tj) reaches 1750C(with +/-250C hysteresis), and the output terminal is switched to Hi-z. The TSD circuit aims to intercept IC from high temperature. The guarantee and protection of IC are not purpose. Therefore, please do not use this IC after TSD circuit operates, nor use it for assumption that operates the TSD circuit. 10．Capacitor between output and GND If a large capacitor is connected between the output and GND, this IC might be destroyed when Vcc becomes 0V or GND, because the electric charge accumulated in the capacitor flows to the output. Please set said capacitor to smaller than 0.1μF. REV. D 10/10 11．Inspection by the set circuit board The stress might hang to IC by connecting the capacitor to the terminal with low impedance. Then, please discharge electricity in each and all process. Moreover, in the inspection process, please turn off the power before mounting the IC, and turn on after mounting the IC. In addition, please take into consideration the countermeasures for electrostatic damage, such as giving the earth in assembly process, transportation or preservation. 12．Each input terminal This IC is a monolithic IC, and has P+ isolation and P substrate for the element separation. Therefore, a parasitic PN junction is firmed in this P-layer and N-layer of each element. For instance, the resistor or the transistor is connected to the terminal as shown in the figure below. When the GND voltage potential is greater than the voltage potential at Terminals A or B, the PN junction operates as a parasitic diode. In addition, the parasitic NPN transistor is formed in said parasitic diode and the N layer of surrounding elements close to said parasitic diode. These parasitic elements are formed in the IC because of the voltage relation. The parasitic element operating causes the wrong operation and destruction. Therefore, please be careful so as not to operate the parasitic elements by impressing to input terminals lower voltage than GND(P substrate). Please do not apply the voltage to the input terminal when the power-supply voltage is not impressed. Moreover, please impress each input terminal lower than the power-supply voltage or equal to the specified range in the guaranteed voltage when the power-supply voltage is impressing. Resister Transistor(NPN) Terminal B Terminal A C Terminal B B E Terminal A B P+ P P+ Parasitic element C E P+ P P+ Surrounding elements P-Substrate P-Substrate Parasitic element GND Parasitic element GND Parasitic element GND GND Simplified structure of IC 13．Earth drawing pattern ・Please lower in plenty the electric impedance for VCC and GND supply line. ・In this IC, comparator GND and driver GND are designed the same terminal. Because the size of the chip has been miniaturized. Inside of this IC, GND supply line is separated and connected one point of the terminal. Please note that the GND supply voltage is not any changed. 14．Reverse brake When you do the reversal brake from the high-velocity revolution note the counter electromotive force. Moreover, confirm the output current enough and examine the rotational speed which uses the reversal brake. 15．About the capacitor between VCC-GND The VCC-GND capacitor absorbs the change in a steep voltage and the current because of the PWM drive. As a result, there is a role to suppress the disorder of the VCC voltage. However, the effect decreases by the influence of the wiring impedance etc. if the capacitor becomes far from IC. Arrange the VCC-GND capacitor near IC. 16．Bypass capacitor Between the supply power supplies connect the bypass capacitor(0.1μF) near the pin of this IC. REV. D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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