TH97/10561QM D10XB60H TW00/17276EM IATF 0060636 SGS TH07/1033 SILICON BRIDGE RECTIFIER PRV : 600 Volts Io : 10 Amperes C3 0.150 (3.8) 0.134 (3.4) 0.189 (4.8) 0.173 (4.4) 0.996 (25.3) 0.972 (24.7) + ~ ~ 0.075 (1.9) 0.060 (1.5) 0.043 (1.1) 0.035 (0.9) 0.114 (2.9) 0.098 (2.5) 0.303 (7.7) 0.287 (7.3) 0.032 (0.8) 0.043 (1.1) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 4.28 grams 0.709 (18) 0.669 (17) 0.603(15.3) 0.579(14.7) Glass passivated junction chip High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free 0.130(3.7) 0.146(3.3) * * * * * * * * * 0.383(9.7) 0.367(9.3) FEATURES : 0.134(3.4) 0.122(3.1) RBV4 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. RATING Maximum Peak Reverse Voltage Maximum Average Forward Current With heatsink, Tc = 112 °C (50Hz Sine wave, R-load ) Without heatsink, Ta = 25 °C Maximum Peak Forward Surge Current, Tj = 25 °C SYMBOL VALUE UNIT VRM 600 V IO 10 2.9 A IFSM 170 A I2t 110 A2S VF 1.05 V IR 10 μA Maximum Thermal Resistance, Junction to case, With heatsink RӨJC 1.9 °C/W Maximum Thermal Resistance, Junction to Ambient, Without heatsink RӨJA 26 °C/W Maximum Thermal Resistance, Junction to Lead, Without heatsink RӨJL 6 °C/W TJ 150 °C TSTG - 40 to + 150 °C (50Hz sine wave, Non-repetitive 1 cycle peak value) Current Squared Time at 1ms ≤ t < 10 ms, TJ = 25 °C Maximum Forward Voltage per Diode at I F = 5.0 A ( Pulse measurement, Rating of per diode) Maximum DC Reverse Current, VR=VRM ( Pulse measurement, Rating of per diode) Operating Junction Temperature Storage Temperature Range Page 1 of 2 Rev. 00 : February 5, 2009 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( D10XB60H ) FIG.2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AVERAGE RECTIFIER FORWARD CURRENT, (A) 10 8 6 4 2 Sine wave, R-load with heatsink 0 80 90 100 110 120 130 140 150 PEAK FORWARD SURGE CURRENT, (A) FIG.1 - DERATING CURVE 200 150 100 50 0 1 CASE TEMPERATURE, ( °C) 10 100 NUMBER OF CYCLES (CYCLES) FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - POWER DISSIPATION PER DIODE 100 POWER DISSIPATION , (W) FORWARD CURRENT, (A) 30 10 Tc = 150 °C Tc = 25 °C 1.0 25 20 15 10 Sine wave TJ = 150 °C 5 0 0 2 4 6 8 10 12 14 AVERAGE RECTIFIED CURRENT, (A) 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V) Page 2 of 2 Rev. 00 : February 5, 2009