NB100LVEP56 - ON Semiconductor

NB100LVEP56
2.5V / 3.3V ECL DUAL
Differential 2:1 Multiplexer
Description
The NB100LVEP56 is a dual, fully differential 2:1 multiplexer. The
differential data path makes the device ideal for multiplexing low
skew clock or differential data signals. The device features both
individual and common select inputs to address both data path and
random logic applications. Common and individual selects can accept
both LVECL and LVCMOS input voltage levels. Multiple VBB pins
are provided.
The VBB pin, an internally generated voltage supply, is available to
this device only. For single−ended input operation, the unused
differential input is connected to VBB as a switching reference voltage.
VBB may also rebias AC coupled inputs. When used, decouple VBB
and VCC via a 0.01 mF capacitor and limit current sourcing or sinking
to 0.5 mA. When not used, VBB should be left open.
•
•
•
•
•
March, 2014 − Rev. 10
N100
VP56
ALYWG
G
TSSOP−20
DT SUFFIX
CASE 948E
24
24
Maximum Input Clock Frequency > 2.5 GHz Typical
Maximum Input Data Rate > 2.5 Gb/s Typical
525 ps Typical Propagation Delays
Low Profile QFN Package
PECL Mode Operating Range:
VCC = 2.375 V to 3.8 V with VEE = 0 V
NECL Mode Operating Range:
VCC = 0 V with VEE = −2.375 V to −3.8 V
Separate, Common Select, and Individual Select
(Compatible with ECL and CMOS Input Voltage Levels)
Q Output Will Default LOW with Inputs Open or at VEE
Multiple VBB Outputs
These Devices are Pb−Free and are RoHS Compliant
© Semiconductor Components Industries, LLC, 2014
MARKING
DIAGRAMS*
1
Features
•
•
•
•
•
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1
24 PIN QFN
MN SUFFIX
CASE 485L
A
L
Y
W
G
N100
VP56
ALYWG
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
1
Publication Order Number:
NB100LVEP56/D
NB100LVEP56
Table 1. PIN FUNCTION DESCRIPTION
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Pin No.
TSSOP
QFN
Name
I/O
Default
State
14,20
3,9,18,19,
20
VCC
−
−
Positive Supply Voltage. All VCC Pins must be Externally
Connected to Power Supply to Guarantee Proper Operation.
11
15,24
VEE
−
−
Negative Supply Voltage. All VEE Pins must be Externally
Connected to Power Supply to Guarantee Proper Operation.
3,8
6,12
VBB0,
VBB1
−
−
ECL Reference Voltage Output
1
4
D0a
ECL Input
Low
Noninverted Differential Data a Input to MUX 0. Internal 75 kW to
VEE.
2
5
D0a
ECL Input
High
Inverted Differential Data a Input to MUX 0. Internal 75 kW to VEE
and 37 kW to VCC.
4
7
D0b
ECL Input
Low
Noninverted Differential Data b Input to MUX 0. Internal 75 kW to
VEE.
5
8
D0b
ECL Input
High
Inverted Differential Data b Input to MUX 0. Internal 75 kW to VEE
and 37 kW to VCC.
6
10
D1a
ECL Input
Low
Noninverted Differential Data a Input to MUX 1. Internal 75 kW to
VEE.
7
11
D1a
ECL Input
High
Inverted Differential Data a Input to MUX 1. Internal 75 kW to VEE
and 37 kW to VCC.
9
13
D1b
ECL Input
Low
Noninverted Differential Data b Input to MUX 1. Internal 75 kW to
VEE.
10
14
D1b
ECL Input
High
Inverted Differential Data b Input to MUX 1. Internal 75 kW to VEE
and 37 kW to VCC.
19
2
Q0
ECL Output
−
Noninverted Differential Output MUX 0. Typically Terminated with
50 W to VTT = VCC − 2.0 V.
18
1
Q0
ECL Output
−
Inverted Differential Output MUX 0. Typically Terminated with
50 W to VTT = VCC − 2.0 V.
13
17
Q1
ECL Output
−
Noninverted Differential Output MUX 1. Typically Terminated with
50 W to VTT = VCC − 2.0 V.
12
16
Q1
ECL Output
−
Inverted Differential Output MUX 1. Typically Terminated with
50 W to VTT = VCC − 2.0 V.
17
23
SEL0
ECL, CMOS
Input
Low
Noninverted Differential Select Input to MUX 0. Internal 75 kW to
VEE.
16
22
COM_SEL
ECL, CMOS
Input
Low
Noninverted Differential Common Select Input to Both MUX.
Internal 75 kW to VEE.
15
21
SEL1
ECL, CMOS
Input
Low
Noninverted Differential Select Input to MUX 1. Internal 75 kW to
VEE.
N/A
−
EP
−
Description
Exposed Pad. (Note 1)
1. The thermally conductive exposed pad on the package bottom (see case drawing) must be attached to a heat sinking conduit.
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2
NB100LVEP56
D0a
R1
D0b
R1
R2
1
Q0
Q0
Table 2. TRUTH TABLE
0
D0a
R1
SEL0
R2
R1
D0b
R1
SEL0
SEL1
COM_SEL
Q0, Q0
Q1, Q1
X
L
L
H
H
X
L
H
H
L
H
L
L
L
L
a
b
b
a
a
a
b
a
a
b
COM_SEL
R1
D1a
R1
D1b
R1
SEL1
R2
R1
1
Q1
Q1
0
D1a
R1
VCC
VEE
R2
D1b
R1
COM
VEE SEL0 SEL SEL1 VCC VCC
VCC
Q0
Q0
SEL0
COM_SEL
SEL1
VCC
Q1
Q1
VEE
Figure 1. Logic Diagram
20
19
18
17
16
15
14
13
12
11
24
2
3
4
5
6
7
8
9
10
D0a
D0a
VBBO
D0b
D0b
D1a
D1a
VBB1
D1b
D1b
22
21
20
19
Q0
1
18
VCC
Q0
2
17
Q1
VCC
3
16
Q1
D0a
4
15
VEE
D0a
5
14
D1b
VBB0
6
13
D1b
NB100LVEP56
1
23
Exposed Pad
(EP)
NB100LVEP56
7
Figure 2. TSSOP−20 Lead Pinout (Top View)
8
9
10
11
12
D0b D0b VCC D1a D1a VBB1
Figure 3. QFN−24 Lead Pinout (Top View)
Table 3. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
(R1)
Internal Input Pullup Resistor
ESD Protection
(R2)
37 kW
Human Body Model
Machine Model
Charged Device Model
Moisture Sensitivity (Note 1)
TSSOP−20
QFN−24
Flammability Rating
75 kW
Oxygen Index: 28 to 34
Transistor Count
> 2 kV
> 150 V
> 2 kV
Pb Pkg
Pb−Free Pkg
Level 1
Level 1
Level 1
Level 1
UL 94 V−0 @ 0.125 in
354 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
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3
NB100LVEP56
Table 4. MAXIMUM RATINGS
Symbol
Rating
Unit
VCC
Positive Mode Power Supply
Parameter
VEE = 0 V
Condition 1
Condition 2
6
V
VEE
Negative Mode Power Supply
VCC = 0 V
−6
V
VI
Positive Mode Input Voltage
Negative Mode Input Voltage
VEE = 0 V
VCC = 0 V
6
−6
V
V
Iout
Output Current
Continuous
Surge
50
100
mA
mA
IBB
VBB Sink/Source
"0.5
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction−to−Ambient)
JEDEC 51−3 (1S − Single Layer Test Board)
0 lfpm
500 lfpm
TSSOP−20
TSSOP−20
140
50
°C/W
°C/W
qJA
Thermal Resistance (Junction−to−Ambient)
JEDEC 51−6 (2S2P−Multi Layer Test Board)
with Filled Thermal Vias
0 lfpm
500 lfpm
QFN−24
QFN−24
37
32
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
Standard Board
TSSOP−20
QFN−24
23 to 41
11
°C/W
Tsol
Wave Solder
265
265
°C
VI v VCC
VI w VEE
Pb
Pb−Free
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 5. DC CHARACTERISTICS, PECL VCC = 2.5 V, VEE = 0 V (Note 2)
−40°C
Symbol
Min
Characteristic
Typ
25°C
Max
Min
Typ
85°C
Max
Min
Typ
Max
Unit
IEE
Negative Power Supply Current
35
45
55
35
45
55
35
48
58
mA
VOH
Output HIGH Voltage (Note 3)
1355
1480
1605
1355
1480
1605
1355
1480
1605
mV
VOL
Output LOW Voltage (Note 3)
555
775
900
555
775
900
555
775
900
mV
VIH
Input HIGH Voltage (SEL0, SEL1, COM_SEL)
Input HIGH Voltage (D Inputs) (Note 4)
1335
1335
VCC
1620
1335
1335
VCC
1620
1275
1275
VCC
1620
mV
VIL
Input LOW Voltage (SEL0, SEL1, COM_SEL)
Input LOW Voltage (D Inputs) (Note 4)
VEE
555
875
875
VEE
555
875
875
VEE
555
875
875
mV
VIHCMR
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 5)
1.2
2.5
1.2
2.5
1.2
2.5
V
IIH
Input HIGH Current (@VIH)
150
mA
IIL
Input LOW Current (@VIL)
150
D
D
SEL
0.5
−150
−150
150
0.5
−150
−150
0.5
−150
−150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Input and output parameters vary 1:1 with VCC. VEE can vary −0.125 V to +1.3 V.
3. All loading with 50 W to VCC − 2.0 V.
4. Do not use VBB at VCC < 3.0 V.
5. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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NB100LVEP56
Table 6. DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 6)
−40°C
Symbol
Characteristic
25°C
85°C
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
35
45
55
35
45
55
35
48
58
mA
IEE
Negative Power Supply Current
VOH
Output HIGH Voltage (Note 7)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
VOL
Output LOW Voltage (Note 7)
1355
1575
1700
1355
1575
1700
1355
1575
1700
mV
VIH
Input HIGH Voltage (SEL0, SEL1, COM_SEL)
Input HIGH Voltage (D Inputs)
2135
2135
VCC
2420
2135
2135
VCC
2420
2135
2135
VCC
2420
mV
VIL
Input LOW Voltage (SEL0, SEL1, COM_SEL)
Input LOW Voltage (D Inputs)
VEE
1355
1675
1675
VEE
1355
1675
1675
VEE
1355
1675
1675
mV
VBB
Output Reference Voltage (Note 8)
1775
1975
1775
1975
1775
1975
mV
VIHCMR
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 9)
3.3
1.2
3.3
1.2
3.3
V
IIH
Input HIGH Current (@VIH)
150
mA
IIL
Input LOW Current (@VIL)
1875
1.2
1875
150
D
D
SEL
1875
150
0.5
−150
−150
0.5
−150
−150
0.5
−150
−150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
6. Input and output parameters vary 1:1 with VCC. VEE can vary +0.5 V to −0.3 V.
7. All loading with 50 W to VCC − 2.0 V.
8. Single−Ended input operation is limited to VCC w 3.0 V in PECL mode.
9. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
Table 7. DC CHARACTERISTICS, NECL VCC = 0 V, VEE = −3.8 V to −2.375 V (Note 10)
−40°C
Symbol
Characteristic
25°C
85°C
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Negative Power Supply Current
35
45
55
35
45
55
35
48
58
mA
VOH
Output HIGH Voltage (Note 11)
−1145
−1020
−895
−1145
−1020
−895
−1145
−1020
−895
mV
VOL
Output LOW Voltage (Note 11)
−1945
−1725
−1600
−1945
−1725
−1600
−1945
−1725
−1600
mV
VIH
Input HIGH Voltage
(SEL0, SEL1, COM_SEL)
Input HIGH Voltage (D Inputs)
−1165
−1165
VCC
−880
−1165
−1165
VCC
−880
−1165
−1165
VCC
−880
VIL
Input LOW Voltage
(SEL0, SEL1, COM_SEL)
Input LOW Voltage (D Inputs)
VEE
−1945
−1600
−1600
VEE
−1945
−1600
−1600
VEE
−1945
−1600
−1600
VBB
Output Reference Voltage (Note 12)
−1525
−1325
−1525
−1325
−1525
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 13)
IIH
Input HIGH Current (@VIH)
IIL
Input LOW Current (@VIL)
−1425
VEE+1.2
0.0
150
D
D
SEL
0.5
−150
−150
−1425
VEE+1.2
0.0
150
0.5
−150
−150
−1425
VEE+1.2
0.5
−150
−150
mV
mV
−1325
mV
0.0
V
150
mA
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
10. Input and output parameters vary 1:1 with VCC.
11. All loading with 50 W to VCC − 2.0 V.
12. Single−Ended input operation is limited to VEE from −3.0 V to −5.5 V in NECL mode.
13. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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NB100LVEP56
Table 8. AC CHARACTERISTICS VCC = 0 V; VEE = −2.375 V to −3.8 V or VCC = 2.375 V to 3.8 V; VEE = 0 V (Note 14)
−40°C
Characteristic
Symbol
VOUTPP
Output Voltage Amplitude
(See Figure 4)
fin v 1 GHz
fin = 2 GHz
fin = 2.5 GHz
tPLH,
tPHL
Propagation Delay to Output Differential
tSkew
Pulse Skew (Note 15)
Within Device Input Skew (Note 16)
Within Device Output Skew (Note 17)
Device−to−Device Skew (Note 18)
tJITTER
RMS Random Clock Jitter (Note 19)
@ v1.0 GHz
@ v1.5 GHz
@ v2.0 GHz
@ v2.5 GHz
Peak−to−Peak Data Dependent Jitter (Note 20)
@ 0.5 GHz
@ 1.25 GHz
@ 2.488 GHz
D to Q, Q
SEL to Q, Q
COM_SEL to Q, Q
VINPP
Input Voltage Swing (Differential Configuration)
(Note 21)
tr
tf
Output Rise/Fall Times @ 50 MHz
(20% − 80%)
Q, Q
25°C
Min
Typ
Max
Min
Typ
525
500
400
700
600
500
550
500
350
700
600
450
375
575
550
500
775
750
625
975
950
400
625
600
525
825
800
10
5
15
50
50
30
50
200
10
5
15
50
0.269
0.306
0.250
0.339
0.4
0.4
0.4
0.8
0.307
0.303
0.305
0.895
4.1
32.2
30.8
16
80
66
150
800
1200
60
110
150
85°C
Max
Min
Typ
500
400
200
700
500
300
450
700
700
575
900
900
700
1100
1100
10
5
15
50
50
30
50
200
0.4
0.4
0.5
2.0
0.371
0.391
0.722
2.443
0.5
0.6
1.2
7.7
4.6
22.6
27.2
15
63
56
4.4
22
24.4
16
53
54
150
800
1200
150
800
1200
60
120
170
90
140
230
650
1025
1000
Max
Unit
mV
ps
ps
ps
mV
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
14. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC − 2.0 V. Input edge rates 150 ps (20% − 80%).
15. Pulse Skew |tPLH − tPHL|
16. Worst case difference between D0a and D0b (or between D1a or D1b), when both output come from same input.
17. Worst case difference between Q0 and Q1 outputs.
18. Skew is measured between outputs under identical transitions.
19. Additive RMS jitter with 50% Duty Cycle Clock Signal.
20. Additive Peak−to−Peak jitter with input NRZ data at PRBS 231−1.
21. Input voltage swing is a single−ended measurement operating in differential mode.
OUTPUT VOLTAGE AMPLITUDE (mV)
850
750
Q AMP (mV)
650
550
450
350
250
0.5
1.0
1.5
2.0
INPUT FREQUENCY (GHz)
Figure 4. Output Voltage Amplitude (VOUTPP) vs.
Input Frequency (fin) at VCC = 2.5 V, 255C
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2.5
NB100LVEP56
D
VINPP = VIH(D) − VIL(D)
D
Q
VOUTPP = VOH(Q) − VOL(Q)
Q
tPHL
tPLH
Figure 5. AC Reference Measurement
Q
Zo = 50 W
D
Receiver
Device
Driver
Device
Q
D
Zo = 50 W
50 W
50 W
VTT
VTT = VCC − 2.0 V
Figure 6. Typical Termination for Output Driver and Device Evaluation
(See Application Note AND8020/D − Termination of ECL Logic Devices.)
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NB100LVEP56
ORDERING INFORMATION
Package
Shipping†
NB100LVEP56DTG
Device
TSSOP−20
(Pb−Free)
75 Units / Rail
NB100LVEP56DTR2G
TSSOP−20
(Pb−Free)
2500 Tape & Reel
NB100LVEP56MNG
QFN−24
(Pb−Free)
92 Units / Rail
NB100LVEP56MNR2G
QFN−24
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
Resource Reference of Application Notes
AN1405/D
− ECL Clock Distribution Techniques
AN1406/D
− Designing with PECL (ECL at +5.0 V)
AN1503/D
− ECLinPSt I/O SPiCE Modeling Kit
AN1504/D
− Metastability and the ECLinPS Family
AN1568/D
− Interfacing Between LVDS and ECL
AN1672/D
− The ECL Translator Guide
AND8001/D
− Odd Number Counters Design
AND8002/D
− Marking and Date Codes
AND8020/D
− Termination of ECL Logic Devices
AND8066/D
− Interfacing with ECLinPS
AND8090/D
− AC Characteristics of ECL Devices
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NB100LVEP56
PACKAGE DIMENSIONS
TSSOP−20
CASE 948E−02
ISSUE C
20X
0.15 (0.006) T U
2X
L
K REF
0.10 (0.004)
S
L/2
20
M
T U
S
V
K
K1
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
S
J J1
11
B
SECTION N−N
−U−
PIN 1
IDENT
0.25 (0.010)
N
1
10
M
0.15 (0.006) T U
S
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
G
D
H
DETAIL E
0.100 (0.004)
−T− SEATING
PLANE
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
SOLDERING FOOTPRINT*
7.06
1
0.65
PITCH
16X
0.36
16X
1.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
MILLIMETERS
MIN
MAX
6.40
6.60
4.30
4.50
--1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.27
0.37
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.252
0.260
0.169
0.177
--0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.011
0.015
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
NB100LVEP56
PACKAGE DIMENSIONS
QFN24, 4x4, 0.5P
CASE 485L
ISSUE B
D
PIN 1
REFEENCE
2X
0.15 C
2X
ÉÉ
ÉÉ
ÉÉ
0.15 C
L
A
B
DETAIL A
E
ALTERNATE
CONSTRUCTIONS
ÉÉÉ
ÉÉÉ
ÇÇÇ
ÇÇÇ
EXPOSED Cu
DETAIL B
0.10 C
A3
ÉÉÉ
ÉÉÉ
ÇÇÇ
A1
SEATING
PLANE
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.20
0.30
4.00 BSC
2.70
2.90
4.00 BSC
2.70
2.90
0.50 BSC
0.30
0.50
0.05
0.15
RECOMMENDED
SOLDERING FOOTPRINT
D2
DETAIL A
DIM
A
A1
A3
b
D
D2
E
E2
e
L
L1
ALTERNATE TERMINAL
CONSTRUCTIONS
C
A1
SIDE VIEW
MOLD CMPD
A3
DETAIL B
A
NOTE 4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND 0.30 MM
FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PAD
AS WELL AS THE TERMINALS.
L1
TOP VIEW
0.08 C
L
L
24X
7
4.30
24X
0.55
2.90
13
E2
1
1
24
19
e
e/2
BOTTOM VIEW
24X
b
0.10 C A B
0.05 C
4.30
2.90
NOTE 3
0.50
PITCH
24X
0.32
DIMENSIONS: MILLIMETERS
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NB100LVEP56/D