DN05057/D High Efficiency, <30mW No‐load PFC www.onsemi.com DESIGN NOTE Table 1. DEVICE DETAILS Device Application Input Voltage Output Power Topology I/O Isolation NCP1615C Adapter 85 to 265 Vac Up to 120 W PFC Non-isolated Characteristic Output Specification Output Voltage 400 Vdc Nominal Nominal Current 300 mA No Load Standby < 30 mW Min Current Zero Description Key Features • High Voltage Startup Circuit • Critical Conduction Mode (CrM) • Novel CCCF Based Control Scheme Maximizes The NCP1615C is a high voltage PFC controller designed to drive PFC boost stages based on an innovative Current Controlled Frequency Foldback (CCFF) method. In this mode, the circuit classically operates in critical conduction mode (CrM) when the inductor current exceeds a programmable value. When the current is below this preset level, the NCP1615C linearly decays the frequency down to a minimum of about 26 kHz when the input current is zero. CCFF maximizes the efficiency at both nominal and light load. In particular, the standby losses are reduced to a minimum. An innovative circuitry allows near-unity power factor even when the switching frequency is reduced. The integrated high voltage startup circuit eliminates the need for external startup components and consumes negligible power during normal operation. Housed in a SOIC−16 package, the NCP1615C also incorporates the features necessary for robust and compact PFC stages, with few external components. Efficiency Across Line and Load • Skip Mode Near the Line Zero Crossing • Fast Line/Load Transient Compensation • • • • • • • (Dynamic Response Enhancer) Valley Turn On Input Voltage Range Detection PFCOK Signal Input to Force Controller into Standby Mode Input Filter Capacitor (X2) Discharge Circuitry Enables Very Low Standby Power Applications Line Removal Detection to Reset the Downstream Converter Power Savings Mode Enables < 30 mW No-Load Power Safety Features • Restart Pin Allows Adjustment of Bulk Voltage • • • • • • • • © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 1 1 Hysteresis in Standby Mode Adjustable Bulk Undervoltage Detection (BUV) Soft Overvoltage Protection Integrated Brownout Detection Overcurrent Protection Open Pin Protection for FB and BUV Pins Internal Thermal Shutdown Latch Input Low Power Mode Operation if the Bypass Diode is Shorted Publication Order Number: DN05057/D DN05057/D • Open Ground Pin Fault Monitoring • Line Overvoltage Detection • Instructions • Always Use an Isolated AC Supply when Testing • When Operating with Ext. Vcc Bias (J3), it is Important • to Connect the AC Line Voltage First, then Connect External Vcc. Failure to Do This will Activate the Line Removal Detection Feature, and the Board will Not Start until Vcc is Discharged to ~4.5 V To Enter Power Savings Mode (PSM), Remove the Jumper Labeled “PSM” (J4) To Enter Standby Mode, Apply 5 V to the Test Point Labeled “STDBY” TRANSFORMER DESIGN www.onsemi.com 2 DN05057/D CIRCUIT SCHEMATIC www.onsemi.com 3 DN05057/D EFFICIENCY PLOTS Standby Power vs. Input Voltage 25.00 Standby Power (mW) 20.00 15.00 10.00 5.00 VAC Pin (mW) 85 4.55 115 5.42 230 16.2 265 19.2 0.00 0 50 100 150 200 250 300 Input Voltage (Vac) Figure 1. Standby Power Efficiency vs. Output Power 98.0 97.0 Efficiency (%) 96.0 95.0 94.0 93.0 92.0 91.0 0 20 40 60 80 100 120 Output Power (W) 85 Vac 115 Vac 230 Vac 140 VAC Pin (W) Io (mA) Vout (V) Po (W) Eff (%) 85 31.0 71.2 397.8 28.3 91.4 85 62.4 146.5 397.9 58.3 93.5 85 94.0 221.3 398.0 88.1 93.7 93.5 85 126.2 296.5 398.1 118.0 115 30.9 71.7 398.2 28.6 92.3 115 61.6 146.1 398.3 58.2 94.4 115 92.6 220.9 398.3 88.0 95.0 115 124.0 296.5 398.3 118.1 95.2 230 30.2 71.4 398.2 28.4 94.2 230 62.0 146.4 398.2 58.3 94.1 230 92.3 221.9 398.3 88.4 95.8 230 122.4 296.5 398.3 118.1 96.5 265 30.1 71.8 398.3 28.6 95.0 265 61.3 147.1 398.2 58.6 95.6 265 92.1 221.9 398.3 88.4 96.0 265 122.3 297.2 398.3 118.4 96.8 265 Vac Average efficiency = 94.57% Figure 2. Efficiency www.onsemi.com 4 DN05057/D POWER SAVINGS MODE VCC is regulated at VCC(PS_on), typically 11 V, by turning on the HV start-up circuit at the valley of every half-cycle. The start-up circuit turns on at the valley of every half-cycle provided that VCC is below VCC(PS_on). The start-up circuit is disabled once VCC exceeds VCC(PS_on). There is no hysteresis in the comparator ensuring that VCC will be below the VCC(PS_on) regulation level during the next half-cycle. Measured data with 2-wire connection: − 5.42 mW at 115 Vac − 16.2 mW at 230 Vac VCC in Regulation Ch. 1 (Yellow): VCC (AC Coupled) Ch. 2 (Blue): HV Figure 3. Power Savings Mode POWER FACTOR Power Factor vs. Output Power 1.000 0.980 Power Factor 0.960 0.940 0.920 0.900 0.880 0.860 0.840 0 20 40 60 80 100 120 Output Power (W) 85 Vac 115 Vac 230 Vac 265 Vac Figure 4. Power Factor www.onsemi.com 5 140 VAC Pin (W) Po (W) 85 31.0 28.3 0.973 PF 85 62.4 58.3 0.988 85 94.0 88.1 0.992 85 126.2 118.0 0.992 115 30.9 28.6 0.961 115 61.6 58.2 0.979 115 92.6 88.0 0.987 115 124.0 118.1 0.990 230 30.2 28.4 0.916 230 62.0 58.3 0.957 230 92.3 88.4 0.970 230 122.4 118.1 0.977 265 30.1 28.6 0.864 265 61.3 58.6 0.950 265 92.1 88.4 0.961 265 122.3 118.4 0.970 DN05057/D DEMO BOARD www.onsemi.com 6 DN05057/D BILL OF MATERIALS Table 2. BILL OF MATERIALS Component Type Value − DM Choke L2 − L3 − 1 C1 1 Qty Ref 1 L1 1 1 Rating Pkg/Dimensions P/N Supplier 150 mH 7447021_WURTH 7447021 WURTH CM Choke 8.5 mH IND_744823210 744823210 WURTH PFC Transformer 300 mH EFD−30 750313750 WURTH − X2 100 nF 305 Vac 5 x 10.5 x 18 mm B32922C3104M C2 − X2 220 nF 305 Vac 7 x 12.5 x 18 mm B32922C3224M 1 C10 SMT Ceramic 10 mF 6.3 V C0603W C1608X5R0J106K080AB TDK 1 C16 SMT Ceramic 100 pF 50 V C0603W C1608X7R1H101K TDK 1 C15 SMT Ceramic 100 nF 50 V C0603W C1608X7R1H104K080AA TDK 3 C8, C9, C11 SMT Ceramic 220 nF 50 V C0603W C1608X7R1H224K080AB TDK 1 C7 SMT Ceramic 2.2 mF 16 V C0805W C2012X7R1C225K125AB TDK 1 C13 SMT Ceramic 10 nF 50 V C0805W C2012X7R1H103K TDK 1 C14 SMT Ceramic 1 nF 50 V C0603W CGA3E2X7R1H102K080AA TDK 2 C3, C4 − Y2 1 nF 250 Vac 5 mm DE2E3KY102MA2BM01 Murata 1 C5 − MKP 470 nF 400 V 15 mm ECW−F4474JL Panasonic 1 C6 − Electrolytic 100 mF 450 V 18 x 40 mm EKXG451ELL101MM40S UCC 1 C12 − Electrolytic 220 mF 35 V 8 x 15 mm EKY−350ELL221MH15D UCC 1 F1 − Fuse 3A 250 V/3 A 2AG 0224003.HXP LITTELFUSE 1 RV1 − MOV 2.5 kA 470 V 10 mm S10K300 EPCOS 2 R1, R2 SMT Resistor Open R1206W 2 R6, R20 SMT Resistor Open R0603W 2 R17, R19 SMT Resistor 0 R0603W CRCW06030000Z0EA Vishay/Dale 1 R9 SMT Resistor 10 kW R0603W CRCW060310K0FKEA Vishay/Dale 1 R14 SMT Resistor 120 kW R0603W CRCW0603120KFKEA Vishay/Dale 4 R24, R25, R26, R27 SMT Resistor 1 kW R0603W CRCW06031K00FKEA Vishay/Dale 1 R13 SMT Resistor 270 kW R0603W CRCW0603270KFKEA Vishay/Dale 2 R12, R18 SMT Resistor 27 kW R0603W CRCW060327K0FKEA Vishay/Dale 2 R5, R7 SMT Resistor 4.7 kW R0603W CRCW06034K70FKEA Vishay/Dale 1 R15 SMT Resistor 4.99 MW R0603W CRCW06034M99FKEA Vishay/Dale 1 R11 SMT Resistor 22 W R0805W CRCW080522R0JNEA Vishay/Dale 1 R16 SMT Resistor 27 W R0805W CRCW080527R0JNEA Vishay/Dale 1 R10 SMT Resistor 2.2 W R0805W CRCW08052R20JNEA Vishay/Dale 2 R3, R4 SMT Resistor 1 kW R1206W CRCW12061K00JNEA Vishay/Dale 2 R22, R23 SMT Resistor 1.8 MW R1206W CRCW12061M80JNEA Vishay/Dale 1 R21 SMT Resistor 681 kW R1206W CRCW1206681KFKEA Vishay/Dale 1 R8 − Resistor 100 mW 3W LOB3R100FLFLT TT Electronics 1 RT1 − NTC 10 W 5 mm B57153S0100M000 EPCOS 1 RT2 − NTC 220 kW 2.5 mm NTCLE100E3224JB0 Vishay/Dale 1 Q3 SMT NPN MMBT3904L 40 V/200 mA SOT−23 MMBT3904LT1G ON Semiconductor 1 Q2 SMT PNP MMBT589 30 V/1 A SOT−23 MMBT589LT1G ON Semiconductor www.onsemi.com 7 DN05057/D Table 2. BILL OF MATERIALS (continued) Qty Component Type Ref Value Rating Pkg/Dimensions P/N Supplier 1 D4 − Fast Acting 1N5406 600 V/3 A DO201AD 1N5406G ON Semiconductor 1 BD1 − Bridge GBU406 600 V/4 A 18.5 x 22 mm GBU406 Diodes 4 D3, D6, D7, D8 SMT General Purpose MMSD4148 100 V/200 mA SOD−123 MMSD4148T1G ON Semiconductor 1 ZD3 SMT Zener 22 V 500 mW SOD−123 MMSZ22T1G ON Semiconductor 1 ZD1 SMT Zener 27 V 500 mW SOD−123 MMSZ27T1G ON Semiconductor 1 ZD2 SMT Zener 33 V 500 mW SOD−123 MMSZ33T1G ON Semiconductor 2 D1, D2 − Rectifier MRA4007 1000 V/1 A SMA MRA4007T3G ON Semiconductor 1 D5 − Fast Acting MUR550 520 V/5 A 1 U1 − PFC Controller NCP1615C 1 Q1 − HV MOSFET IPA50R250CP 4 TP1, TP2, TP3, TP4 − Test Point TESTPOINT 2 J3, J4 − SIP−2P 1 J2 − 1 J1 4 1 DO201AD MUR550APFRLG ON Semiconductor SO16NB_LESS_PIN_15 NCP1615CDR2G ON Semiconductor TO−220FP IPA50R250CP Infineon 0.1″ Pitch 104351−1 TE Connectivity 2T Screw Block 10 mm Pitch ED200/2DS On Shore Technology − 3T Screw Block 5 mm Pitch OSTTA030161 On Shore Technology J5, J6, J7, J8 − Standoff MTGNP685H370V6P 4820 Keystone Electronics HS1 − Heatsink Cut to fit 500 V/13 A REFERENCES [1] NCP1615 Datasheet (NCP1615/D) ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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