ROHM DTC043ZEB

Data Sheet
100mA/50V Digital transistors(with built-in resistors)
DTC043ZM / DTC043ZEB / DTC043ZUB
Dimensions (Unit : mm)
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See Equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
VMT3
Abbreviated symbol : 42
EMT3F
(3)
(1)
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
(2)
Abbreviated symbol : 42
UMT3F
2.0
0.9
(1)
0.53
0.53
2.1
0.425
Applications
Inverter, Interface, Driver
(3)
1.25
0.425
0.32
(2)
0.13
0.65 0.65
1.3
Abbreviated symbol : 42
Packaging specifications and hFE
Package
Packaging Type
Type
Code
Basic ordering
unit (pieces)
DTC043ZM
DTC043ZEB
DTC043ZUB
Equivalent circuit
VMT3
Taping
T2L
EMT3F
Taping
TL
UMT3F
Taping
TL
8000
3000
3000
○
-
-
○
OUT
R1
IN
R2
GND
IN
○
-
OUT
GND
R1=4.7k, R2=47k
Absolute maximum (Ta=25C)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Collector current *1
Output current
Power dissipation *2
Junction temperature
Range of storage temperature
M
Limits(DTC043Z□)
EB
UB
50
30
-5
100
100
IC(max)
IO
PD
Tj
Tstg
150
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
C
C
*1　Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.09 - Rev.A
DTC043ZM / DTC043ZEB / DTC043ZUB
Electrical characteristics (Ta=25C)
Parameter
Symbol
Input voltage
Output voltage
Data Sheet
Min.
Typ.
VI(off)
-
-
0.5
V
VCC=5V / IO=100uA
VI(on)
1.1
-
-
V
VO=0.3V / IO=5mA
VO(on)
-
0.05
0.15
V
IO=5mA / II=0.5mA
II
-
-
1.8
mA
500
nA
VCC=50V / VI=0V
Input current
Max.
Test Conditions
Unit
VI=5V
IO(off)
-
-
DC current gain
GI
80
-
-
-
VO=10V / IO=5mA
Transition frequency *
fT
-
250
-
MHz
VCE=10V /IE=-5mA
f=100MHz
Input resistance
R1
3.29
4.7
6.11
k
R2/R1
8
10
12
-
Output current
Resistance ratio
* Characteristics of built-in transistor
Electrical characteristics curves
10
100
10
OUTPUT CURRENT : IO (mA)
INPUT VOLTAGE : VI(on) (V)
VO=0.3V
Ta=-40ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
1
0.1
VCC=5V
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
0.1
0.01
0.001
0.1
1
10
0
100
OUTPUT CURRENT : IO (mA)
1
1.5
2
2.5
3
INPUT VOLTAGE : V I(off) (V)
Fig.1 Input Voltage vs. Output Current
Fig.2 Input Voltage vs. Output Current
(ON characteristics)
(OFF characteristics)
1000
1
VO=10V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
100
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
0.5
10
1
IO/II=10
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
0.01
0.001
0.1
1
10
100
0.1
OUTPUT CURRENT : IO (mA)
10
100
OUTPUT CURRNET : IO (mA)
Fig.3 DC Current Gain vs. Output Current
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© 2011 ROHM Co., Ltd. All rights reserved.
1
Fig.4 Output Voltage vs. Output Current
2/2
2011.09 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A