www.eicsemi.com 1N4148 HIGH SPEED SWITCHING DIODE DO - 35 PRV : 100 Volts Io : 150 mA FEATURES : * * * * * * Silicon Epitaxial Planar Diode High reliability Low reverse current Low forward voltage drop High speed switching Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. 1.00 (25.4) min. 0.020 (0.52)max. MECHANICAL DATA : * Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.13 gram (approximately) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL VALUE UNIT VRRM 100 V VR 75 V Maximum Average Forward Current IF(AV) 150 1) mA Maximum Surge Forward Current at t < 1s and Tj = 25°C IFSM 500 mA Maximum Power Dissipation , Ta = 25 °C PD 500 mW Maximum Forward Voltage at IF = 10 mA VF 1.0 V 25 nA 5 µA 50 µA Vfr 2.5 V Trr 4 ns 350 1) K/W Junction Temperature Range RθJA TJ 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Reverse Current at VR = 20V at VR = 75V IR at VR = 20V, Tj = 150°C Maximum Voltage Rise when switching ON test with 50mA Pulses tp = 0.1µs, Rise Time <30ns fp = 5 to 100kHz Maximum Reverse Recovery Time from IF = 10mA to IR = 1mA , VR = 6V , RL = 100Ω Thermal Resistance Junction to Ambient Air Note : 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35) Page 1 of 2 Rev. 03 : March 25, 2005 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( 1N4148 ) FIG.2 - POWER DARATING CURVE 250 200 150 100 50 0 500 POWER DISSIPATION , mW AVERAGE FORWARD OUTPUT CURRENT, mA FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 0 25 50 75 100 125 150 400 300 200 100 0 175 0 AMBIENT TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 75 75 100 125 150 175 10 REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, mA 50 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 10 Ta = 25 °C 1 Ta = 100 °C 1.0 0.1 Ta = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE, VOLTS Page 2 of 2 25 AMBIENT TEMPERATURE, ( °C) 1.8 2.0 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) Rev. 03 : March 25, 2005