Certificate TH97/10561QM BAV99 Certificate TW00/17276EM HIGH SPEED DOUBLE DIODE SOT-23 PRV : 85 Volts Io : 125 mA 0.100 0.013 1.40 0.95 0.50 0.35 3.10 2.70 0.19 0.08 * Small plastic SMD package * High switching speed : max. 4 ns * Continuous reverse voltage : max.75 V * Repetitive peak reverse voltage : max. 85 V * Repetitive peak forward current : max. 450 mA * Pb / RoHS Free 3 1 2 1.65 1.20 3.0 2.2 FEATURES : 1.02 0.89 2.04 1.78 BAV99 3 MECHANICAL DATA : * Case : SOT-23 plastic Case * Marking Code : A7 1 2 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Continuous Forward Current (Note 1) Maximum Repetitive Peak Forward Current Maximum Non-repetitive Peak Forward Current (square wave; Tj = 25 °C prior to surge) t = 1µs t = 1ms t = 1s Parameter Forward Voltage Reverse Current Diode Capacitance Reverse Recovery Time Value Unit VRRM VR IF IFRM 85 75 125 450 4 1 0.5 250 360 500 150 -65 to +150 V V mA mA IFSM Ptot Rth j-tp Rth j-a TJ TSTG Total Power Dissipation (Note 1) Thermal Resistance Junction to tie-point Thermal Resistance Junction to Ambient (Note 1) Junction Temperature Range Storage Temperature Range ELECTRICAL CHARACTERISTICS (Rating at Symbol A mW K/W K/W °C °C 25 °C ambient temperature unless otherwise specified.) Test Condition IF = 1 mA IF = 10 mA IF = 50mA IF = 150 mA VR = 25 V VR = 75 V VR = 25 V ; Tj = 150 °C VR = 75 V ; Tj = 150 °C VR = 0 V, f = 1 MHz IF = 10 mA to I R = 10 mA, IR = 1mA , R L = 100 Ω Symbol Min. Typ. Max. Unit VF VF VF VF IR IR IR IR CD - - 715 855 1.0 1.25 30 1.0 30 50 1.5 mV mV V V nA µA µA µA pF Trr - - 4 ns Notes : (1) Device mounted on an FR-4 printed-circuit board Page 1 of 2 Rev. 01 : April 17, 2006 Certificate TH97/10561QM Certificate TW00/17276EM RATINGS AND CHARACTERISTIC CURVES ( BAV99 ) FIG.1 - MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE FIG.2 - DIODE CAPACITANCE VS. REVERSE VOLTAGE 0.7 TOTAL CAPACITANCE , (pF) POWER DISSIPATION, (mA) 125 100 75 50 25 0 0 25 50 75 100 125 150 0.6 0.5 0.4 0.3 0.2 f = 1.0 MHz, Tj = 25 °C 0.1 0 175 0 4 AMBIENT TEMPERATURE, ( °C) 8 12 16 REVERSE VOLTAGE , (V) FIG.3 - FORWARD CURRENT AS A FUNCTION FIG.4 - REVERSE CURRENT AS A FUNCTION OF FORWARD VOLTAGE OF JUNCTION TEMPERATURE 105 REVERSE CURRENT, (nA) FORWARD CURRENT, (mA) 300 200 TJ = 150 °C ; typical vaues TJ = 25 °C ; typical vaues 100 104 VR = 75 V max 103 VR = 75 V VR = 25 V 102 typ typ 0 10 0 1 FORWARD VOLTAGE, (V) Page 2 of 2 2 0 100 200 JUNCTION TEMPERATURE, (°C) Rev. 01 : April 17, 2006