EIC 1N4532

TH97/10561QM
1N4531 ~ 1N4532
TW00/17276EM
IATF 0060636
SGS TH07/1033
HIGH SPEED SWITCHING DIODES
DO - 34 Glass
FEATURES :
• High switching speed: max. 4 ns
1.00 (25.4)
min.
0.078 (2.0 )max.
• Continuous reverse voltage:max. 75 V
• Repetitive peak reverse voltage:max. 75 V
• Repetitive peak forward current:max. 450 mA.
• Pb / RoHS Free
0.118 (3.0)
max.
Cathode
Mark
1.00 (25.4)
min.
0.017 (0.43)max.
MECHANICAL DATA :
Case: DO-34 Glass Case
Weight: approx. 0.11g
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
75
V
Maximum Continuous Reverse Voltage
VRM
75
V
Maximum Continuous Forward Current
IF
200
mA
IFRM
450
mA
PD
500
mW
IFSM
0.5
A
Maximum Junction Temperature
TJ
200
°C
Storage Temperature Range
TS
-65 to + 200
°C
Maximum Repetitive Peak Forward Current
Maximum Power Dissipation
(1)
Maximum Surge Forward Current at t < 1s, Tj = 25 °C
Electrical Characteristics
(Tj = 25°C unless otherwise noted)
Parameter
Symbol
VF
VR = 20 V
VR = 20 V , Tj = 150 °C
VR = 50 V
VR = 50 V , Tj = 150 °C
IF = 10 mA
Cd
f = 1MHz ; VR = 0
Trr
IF = 10 mA to I R = 60mA
RL = 100 Ω ; Measured
at I R = 1 mA
1N4531
IR
Reverse Current
1N4532
Forward Voltage
Diode Capacitance
Reverse Recovery Time
Page 1 of 2
1N4531
1N4532
1N4531
1N4532
Test Condition
Min
Typ
Max
Unit
-
-
25
5
100
100
1
4.0
2.0
nA
-
-
4
2
ns
ns
μA
nA
μA
V
pF
Rev. 03 : December 3, 2008
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( 1N4531 ~ 1N4532 )
FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS
FORWARD CURRENT AS A FUNCTION OF
AMBIENT TEMPERATURE.
FIG. 2 TYPICAL FORWARD VOLTAGE
1000
Forward Current , IF (mA)
CONTINUOUS FORWARD CURRENT,
IF (mA)
200
100
100
10
TJ = 25°C
1
0.1
0
0.01
0
100
200
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Forward Voltage , VF (V)
Ambient Temperature , Ta (°C)
FIG. 3 TYPICAL DIODE CAPACITANCE AS
A FUNCTION OF REVERSE VOLTAGE
FIG. 4 TYPICAL REVERESE CURRENT
VS JUNCTION TEMPERATURE
103
1.2
Reverse Current , IR (nA)
Diode Capacitance , Cd (pF)
1.0
0.9
0.8
0.7
f = 1MHz;
TJ = 25°C
0.6
VR = 50V
102
10
1
0.5
0.1
0.4
0
10
Reverse Voltage , VR (V)
Page 2 of 2
20
0
100
200
Junction Temperature , Ta (°C)
Rev. 03 : December 3, 2008