BAV100 ~ BAV103 HIGH SPEED SWITCHING DIODES MiniMELF (SOD-80C) Cathode Mark FEATURES : φ 0.063 (1.64) • Switching speed: max. 50 ns • General application • Continuous reverse voltage: 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively Mounting Pad Layout • Repetitive peak forward current: max. 625 mA. • Pb / RoHS Free 0.098 (2.50) Max. 0.049 (1.25)Min. MECHANICAL DATA : 0.079 (2.00)Min. Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g 0.197 (5.00) REF Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Symbol BAV100 BAV101 BAV102 BAV103 BAV100 BAV101 BAV102 BAV103 Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage at t = 100µs , Tj = 25°C VRRM VR V V mA mA 3.0 IFSM A 1.0 at t = 1s , Tj = 25°C PD TJ TS Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Unit 60 120 200 250 50 100 150 200 625 250 IFRM IF Maximum Repetitive Peak Forward Current Maximum Continuous Forward Current Maximum Surge Forward Current Value 400 175 -65 to + 175 mW °C °C Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Symbol Reverse Current IR Forward Voltage VF Diode Capacitance Cd Reverse Recovery Time Trr Page 1 of 2 Test Condition VR = 50 V VR = 100 V VR = 150 V VR = 200 V IF = 100 mA IF = 200 mA f = 1MHz ; VR = 0 IF = 30 mA to IR = 30mA RL = 100 Ω ; measured at IR = 3mA Min. - Typ. - Max. 100 100 100 100 1.0 1.25 5.0 Unit - - 50 ns nA V pF Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( BAV100 ~ BAV103 ) FIG. 1 MAXIMUM FORWARD CURRENT VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE 1000 Forward Current , IF (mA) CONTINUOUS FORWARD CURRENT, IF (mA) 400 300 200 100 10 TJ = 25°C 1 100 0.1 0 0.01 0 100 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Forward Voltage , VF (V) Ambient Temperature , Ta (°C) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERSE CURRENT VERSUS JUNCTION TEMPERATURE 103 1.5 Reverse Current , IR (µA) Diode Capacitance , Cd (pF) 1.4 1.3 f = 1MHz; TJ = 25°C 1.2 1.1 102 VR = VRmax. 10 1 1.0 10-1 0.9 10-2 0.8 0 10 Reverse Voltage , VR (V) Page 2 of 2 20 0 100 200 Junction Temperature, Tj (°C) Rev. 02 : March 25, 2005