Certificate TH97/10561QM 1SS226 SILICON EPITAXIAL PLANAR DIODE SOT-23 PRV : 85 Volts Io : 100 mA 0.100 0.013 1.40 0.95 0.50 0.35 Small package Low forward voltage Fast reverse recovery time Small total capacitance Ultra high speed switching application Pb / RoHS Free 3 1 2 1.65 1.20 3.0 2.2 3.10 2.70 0.19 0.08 FEATURES : * * * * * * Certificate TW00/17276EM 1.02 0.89 2.04 1.78 3 1 MECHANICAL DATA : 2 Dimensions in millimeters * Case : SOT-23 plastic Case * Marking Code : FC MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta =25 °C) Symbol Value Unit Maximum Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Maximum Peak Forward Current IFM 300 mA Average Forward Current IF(AV) 100 mA Surge Current (10 ms) IFSM 2 A Power Dissipation PD 150 mW Junction Temperature TJ 150 °C TSTG -55 to +150 °C Parameter Storage Temperature Range ELECTRICAL CHARACTERISTICS Parameter (Ta =25 °C) Test Condition Symbol Min. Max. Unit Forward Voltage IF = 100 mA VF - 1.2 V Reverse Current VR = 80 V IR - 0.5 µA Total Capacitance VR = 0 V, f = 1 MHz CT - 3 pF Reverse Recovery Time IR = 10 mA Trr - 4 ns Page 1 of 2 Rev. 01 : September 20, 2006 Certificate TH97/10561QM Certificate TW00/17276EM RATINGS AND CHARACTERISTIC CURVES ( 1SS226 ) FIG.1 - FORWARD CURRENT VS. FIG.2 - REVERSE CURRENT VS. FORWARD VOLTAGE REVERSE VOLTAGE 200 10 Ta = 100 °C 10 REVERSE CURRENT, (μA) FORWARD CURRENT, (mA) 100 1 Ta = 25 °C 0.1 1.0 Ta = 100 °C 0.1 Ta = 25 °C 0.01 0.001 0.01 0 0.2 0.4 0.6 0.8 1.0 0 FORWARD VOLTAGE, (V) 80 100 FORWARD CURRENT 100 3.0 f = 1 MHz Ta = 25 °C 2.5 REVERSE RECOVERY TIME, (ns) TOTAL CAPACITANCE, (pF) 60 FIG.4 - REVERSE RECOVERY TIME VS. REVERSE VOLTAGE 2.0 1.5 1.0 0.5 Ta = 25 °C 10 1 0.1 1.0 10 REVERSE VOLTAGE, (V) Page 2 of 2 40 REVERSE VOLTAGE, (V) FIG.3 - TOTAL CAPACITANCE VS. 0 0.1 20 100 0.1 1.0 10 100 FORWARD CURRENT, (mA) Rev. 01 : September 20, 2006