SEMICONDUCTOR KDS193 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E B L ・Small Package : SOT-23. L ・Low Forward Voltag : VF=0.9V(Typ.). 2 A H 1 P VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA IFSM 2 A Power Dissipation PD 150 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Maximum (Peak) Reverse Voltage Surge Current (10ms) Storage Temperature Range J UNIT K RATING P N SYMBOL C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC 3 G ・Small Total Capacitance : CT=0.9pF(Typ.). D ・Fast Reverse Recovery Time : trr=1.6ns(Typ.). DIM A MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M 3 1. NC 2. ANODE 3. CATHODE 2 1 SOT-23 Marking Lot No. F3 Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.60 - VF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 UNIT V Reverse Current IR VR=80V - - 0.5 μA Total Capacitance CT VR=0, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 ns 2012. 3. 29 Revision No : 2 1/2 KDS193 IF - VF 10 REVERSE CURRENT I R (µA) 10 FORWARD CURRENT I F (mA) IR - VR 3 2 10 Ta = 10 0 C Ta =2 Ta 5 C =-2 5 C 10 1 10 10 -1 -2 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta=100 C 1 Ta=75 C 10 -1 10 -2 10 -3 Ta=50 C Ta=25 C 0 20 40 t rr - I F TOTAL CAPACITANCE CT (pF) 2.0 REVERSE RECOVERY TIME t rr (ns) C T - VR f=1MHz Ta=25 C 1.6 1.2 0.8 0.4 0.1 0.3 1 3 80 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE V F (V) 0 60 10 30 100 100 Ta=25 C Fig. 1 50 30 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA) REVERSE VOLTAGE VR (V) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01µF DUT WAVEFORM 50Ω -6V 2kΩ 50Ω 0 OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 0.1 I R IR 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2012. 3. 29 Revision No : 2 2/2