SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V (Typ.). B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC H ) 3 1 SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current IO 100 * mA IFSM 2* A Power Dissipation PD 100 mW Junction Temperature Tj 150 Tstg -55 150 Maximum (Peak) Reverse Voltage C MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + D E G 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + DIM A B G A 2 : CT=0.9pF (Typ.). C Small Total Capacitance D H 0.50 J _ 0.05 0.13 + J 3 1. ANODE 1 Surge Current (10ms) Storage Temperature Range 2. ANODE 2 3. CATHODE 2 1 ESM Note : * Unit Rating. Total Rating=Unit Rating x 1.5 Marking B3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage ) SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.60 - VF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 UNIT V Reverse Current IR VR=80V - - 0.5 A Total Capacitance CT VR=0, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS 2007. 5. 10 Revision No : 3 1/2 KDS121E IF - VF 1 Ta Ta = 10 0 C 10 =2 5 =-2 C 5 C 2 10 10 REVERSE CURRENT I R (µA) 10 Ta FORWARD CURRENT I F (mA) 10 10 IR - VR 3 -1 Ta=75 C 10 10 -2 10 0 0.2 0.4 0.6 0.8 1.0 Ta=100 C 1 -1 Ta=50 C -2 Ta=25 C -3 0 1.2 20 40 t rr - I F C T - VR REVERSE RECOVERY TIME t rr (ns) 2.0 TOTAL CAPACITANCE CT (pF) f=1MHz Ta=25 C 1.6 1.2 0.8 0.4 0 0.3 1 3 80 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE V F (V) 0.1 60 10 30 100 Ta=25 C Fig. 1 50 30 10 5 3 1 0.5 0.1 100 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA) REVERSE VOLTAGE VR (R) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01µF DUT WAVEFORM 50Ω -6V 2kΩ 50Ω 0 OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 0.1 I R IR 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2007. 5. 10 Revision No : 3 2/2