ROHM BD3506EFV

High Performance Regulators for PCs
Nch FET Ultra LDO
for PC Chipsets
BD3506F,BD3506EFV
No.10030EAT30
Description
The BD3506F/EFV is an ultra-low dropout linear regulator for chipset that can achieve ultra-low voltage input to ultra-low
voltage output. By using N-MOS FET for built-in power transistor, the regulator can be used at ultra-low I/O voltage
difference up to voltage difference generated by ON resistor (Ron = 120 mΩ/100 mΩ). Because by reducing the I/O voltage
difference, large current (Iomax = 2.5A) output is achieved and conversion loss can be reduced, switching power supply can
be replaced. BD3506F/EFV does not need any choke coil, diode for rectification and power transistors which are required
for switching power supply, total cost of the set can be reduced and compact size can be achieved for the set. Using
external resistors, optional output from 0.65V to 2.5V can be set. In addition, since voltage output start-up time can be
adjusted by using the NRCS terminal, it is possible to meet the power supply sequence of the set.
Features
1) Built-in high-accuracy reference voltage circuit (0.65V±1%)
2) Built-in VCC low input maloperation prevention circuit (Vcc = 4.15V)
3) Reduced rush current by NRCS
4) Built-in ultra-low on-resistor (120/100 mΩ typ) Nch Power MOSFET (BD3506F/BD3506EFV)
5) Built-in current limiting circuit (2.5A min)
6) Built-in thermal shutdown circuit
7) Output variable type (0.65-2.5V)
8) Adoption of SOP8 package (BD3506F): 5.0 x 6.2 x 1.5 (mm)
9) Adoption of high power HTSSOP-B20 package (BD3506EFV): 5.0 x 6.4 x 1.0 (mm)
Applications
Mobile PC, desktop PC, LCD-TV, DVD, digital home appliances
●Line up
Parameter
BD3506F
BD3506EFV
120mΩ
100mΩ
2.5A
2.5A
SOP8
HTSSOP-B20
Ron
Output Current
Package
●Absolute Maximum Ratings(Ta=25℃)
Parameter
Input Voltage1
Input Voltage2
Symbol
VCC
VIN
Ratings
Unit
BD3506F
BD3506EFV
7 *1
7 *1
V
1
1
V
7*
7*
Enable Input Voltage
Ven
7
7
V
Power Dissipation1
Pd1
560 *2
-
mW
Power Dissipation2
Pd2
690 *3
1000 *4
mW
Operating Temperature Range
Topr
-10~+100
-10~+100
℃
Storage Temperature Range
Tstg
-55~+125
-55~+125
℃
Tjmax
+150
+150
℃
Maximum Junction Temperature
*1 However, not exceeding Pd.
*2 In the case of Ta≥25°C (no heat radiation board), derated at 4.48 mW/°C.
*3 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 5.52 mW/°C.
*4 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 8.00 mW/°C.
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1/14
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
●Recommended Operating Conditions(Ta=25℃)
Parameter
Ratings
Symbol
Input Voltage1
MIN
MAX
4.3
5.5
VCC
Input Voltage2
V
5
VIN
1.2
Output Voltage
Vo
VFB
2.5
V
Enable Input Voltage
Ven
-0.3
5.5
V
CNRCS
0.001
1
µF
Capacitor in NRCS pin
VCC-1 *
Unit
V
*5 However, irrespective of charging order of VCC and VIN.
* No radiation-resistant design is adopted for the present product.
●Electrical Characteristics (unless otherwise noted, Ta=25 VCC=5V Ven=3V VIN=1.8V R1=3.9KΩ R2=3.3KΩ)
Limits
Parameter
Symbol
Unit
Condition
MIN
TYP
MAX
Bias Current
ICC
-
0.7
1.4
mA
Bias current
IST
-
0
10
µA
Ven=0V
VOUT
-
1.200
-
V
Io=50mA
Shut-Down Mode Current
Output Voltage
Io
2.5
-
-
A
Maximum Output Current
Iost
-
2.0
-
A
Maximum Short Current
Tcvo
-
0.01
-
%/℃
Temperature coefficient of Output Voltage
VFB1
0.643
0.650
0.657
V
Io=50mA
Feed Back Voltage 1
VFB2
0.630
0.650
0.670
V
Io=0 to 2A, Ta=-10 to 100℃*5
Vo=0V
Feed Back Voltage 2
Reg.l1
-
0.1
0.5
%/V
VCC=4.3V to 5.5V
Line Regulation 1
Reg.l2
-
0.1
0.5
%/V
VIN=1.2V to 3.3V
Line Regulation 2
Reg.L
-
0.5
10
mV
Io=0 to 2A
Dropout Voltage (BD3506F)
dVo
-
120
200
mV
Io=1A,VIN=1.2V, Ta=-10 to 100℃*5
Dropout Voltage (BD3506EFV)
dVo
-
100
160
mV
Io=1A,VIN=1.2V, Ta=-10 to 100℃*5
Standby Discharge Current
Iden
150
-
-
mA
Ven=0V, Vo=1V
[Enable]
High level Enable Input Voltage
Enhi
2
-
5.5
V
Low level Enable Input Voltage
Enlow
-0.3
-
0.8
V
Ien
-
7
10
µA
IFB
-100
0
100
nA
NRCS Charge Current
Inrcs
14
20
26
µA
Vnrcs=0.5V
NRCS Standby Voltage
VSTB
-
0
50
mV
Ven=0V
VCC UVLO
VCCUVLO
4.00
4.15
4.30
V
VCC UVLO Hysteresis
Vcchys
100
160
220
mV
Enable pin Input Current
Ven=3V
[Voltage Feed Back]
Feed Back terminal Bias Current
[NRCS]
[UVLO]
Vcc:Sweep-up
Vcc:Sweep-down
*5 Design Guarantee
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2/14
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
●Reference Data
10
EN
⊿Vout
(50mV/div)
8
IIN(uA)
Vin
Vcc
Iout
(1A/div)
6
4
2
Vo
0
0
Fig.2 Input Voltage
SequenceFinal Input Voltage
EN
Fig.1 Transient Response
4
VIN(V)
6
8
Fig.3 VIN-IIN(Ta=25℃)
656
EN
2
EN
655
654
Vin
Vin
Vfb(mV)
653
Vcc
652
651
Vcc
650
649
648
Vo
Vo
647
646
-10
Fig.4 Input Voltage
SequenceFinal Input Voltage
VIN
10
30
50
Ta( ℃)
70
90
Fig.6 Input Voltage
SequenceFinal Input Voltage
VCC
Fig.5 Ta-Vfb
18
16
Vo
20mV/DIV
Vo
20mV/DIV
14
IEN(uA)
12
Io
1A/DIV
Io
1A/DIV
10
8
6
4
2
0
0
Fig.7 Transient Response (rise)
Cout=100uF
Vo
20mV/DIV
Fig.8 Transient Response (fall)
Cout=100uF
Fig.10 Transient Response (rise)
Cout=220uF
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2
3
VEN(V)
4
5
Fig.9 VEN-IEN
EN
2V/DIV
EN
2V/DIV
NRCS
0.5V/DIV
NRCS
0.5V/DIV
Io
1A/DIV
1
Vo
0.5V/DIV
Vo
0.5V/DIV
Fig.11 Start up Wave Form
3/14
Fig.12 Shut down Wave Form
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
700
600
VFB(mV)
500
Vo
20mV/DIV
Vo
50mV/DIV
Io
1A/DIV
Io
1A/DIV
400
300
200
100
0
0
0.2
0.4
0.6
0.8
VNRCS(V)
1
1.2
Fig.13 VNRCS-VFB
Fig.14 Transient Response (fall)
Cout=220uF
Fig.15 Transient Response (rise)
47u MLCC+30mΩ
Vo
50mV/DIV
Io
1A/DIV
Fig.16 Transient Response (fall)
47u MLCC+30mΩ
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4/14
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
●Block Diagram
◎BD3506F
VCC
VCC
4
VCC
Enable
EN
1
UVLO
Reference
VIN
Current
CL
VIN
2
Limit
Block
Vo1
7
CL
UVLO
TSD
Thermal
Vo
8
Vo2
EN
VFB
R2
3
Shutdown
NRCS
R1
TSD
6
5
NRCS
GND
◎BD3506EFV
VCC
17
VCC
VIN1
VCC
EN
13
Reference
15
Limit
VCC
Block
CL
UVLO
TSD
Thermal
Shutdown
Current
CL
UVLO
14
Vo1
5
Vo2
6
Vo3
7
Vo4
8
Vo5
9
Vo6
10
FB
16
EN
NRCS
VIN
VIN2
Vo
R2
R1
TSD
2
4
NRCS
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5/14
3
20
GND
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
●Pin Configration and Pin Function
◎BD3506F
○Pin Configration
○Pin Function
Pin
Pin
No.
Name
EN 1
8 VO2
VIN 2
7 VO1
FB 3
PIN FUNCTION
1
EN
Enable Pin
2
VIN
Input Voltage Pin
3
FB
Output Voltage Feedback
4
VCC
Power Source
5
GND
Ground Pin
6
NRCS
7
VO1
VO1 Pin
8
VO2
VO2 Pin
6 NRCS
5 GND
VCC 4
◎BD3506EFV
○Pin Configration
N.C. 1
○Pin Function
PIN
PIN
No.
Name
1
N.C.
20 GND3
NRCS(Non Rush Current on Start Up)
time setup
PIN FUNCTION
Non connection
2
GND1
Ground1 Pin
3
GND2
Ground2 Pin
4
NRCS
NRCS(Non Rush Current on Start Up)
time setup
GND1 2
19 N.C.
GND2 3
18 N.C.
5
VO1
VO1 Pin
6
VO2
VO2 Pin
17 VCC
7
VO3
VO3 Pin
8
VO4
VO4 Pin
NRCS
4
VO1 5
VO2 6
16 FB
15 VIN2
VO3 7
14 VIN1
VO4 8
13 EN
VO5 9
12 N.C.
VO6 10
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11 N.C.
6/14
9
VO5
VO5 Pin
10
VO6
VO6 Pin
11
N.C.
Non connection
12
N.C.
Non connection
13
EN
14
VIN1
Input Voltage1 Pin
15
VIN2
Input Voltage2 Pin
Enable Pin
16
FB
17
VCC
Output Voltage Feedback
Power Source
18
N.C.
Non connection
19
N.C.
Non connection
20
GND3
Ground3 Pin
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
●Block Function
AMP
An error amplifier that compares reference voltage (VREF) to Vo and drives Nch FET (Ron = 120/100 mΩ) of output. The
frequency characteristics are optimized so that low ESR functional polymer capacitor can be used for the output capacitor
and high-speed transient response can be achieved. The input voltage range at the AMP section is GND-2.5V and the
output voltage range of the AMP section is GND-VCC. At the time of EN OFF or UVLO, the output is brought to the LOW
level and the output NchFET is turned OFF.
EN
By the logic input pin, regulator ON/OFF is controlled. At the time of OFF, the circuit current is controlled to be 0 µA to
reduce the standby current consumption of the apparatus. In addition, EN turns ON FET that can discharge NRCS
terminal Vo and removes excess electric charge to prevent maloperation of IC on the load side. Since there is no
electrical connection with the Vcc terminal as is the case of Di for electrostatic measures, it does not depend on the input
sequence.
UVLO
UVLO turned OFF output to prevent output voltage from making maloperation at the time of Vcc reduced voltage. Same
as EN, UVLO discharges NRCS Vo. When voltage exceeds the threshold voltage (TYP 4.15V), UVLO starts output.
CURRENT LIMIT
In the event the output current that exceeds the current (2.5A or more) set inside the IC flows when output is turned ON,
output voltage is attenuated to protect the IC on the load side. When current reduces, output voltage returns to the set
voltage.
NRCS
Connecting an external capacitor to the counter-GND of NRCS pin can achieve soft start. The output voltage startup time
is determined by the time when the NRCS terminal reaches VFB (0.65V). During start-up, the NRCS terminal serves as
a constant current source of 20 µA (Typ.) output, and charges the capacitor externally connected.
TSD (Thermal Shut down)
In order to prevent thermal breakdown and thermal runaway of the IC, the output is turned OFF when chip temperature
becomes high. In addition, when temperature returns to the specified temperature, the output is recovered. However,
since the temperature protection circuit is originally built in to protect the IC itself, thermal design within Tj(max) is
requested.
VIN
This is a large-current supply line. The VIN terminal is connected to the rain of output NchFET. Since there is no
electrical connection with the Vcc terminal as is the case of Di for electrostatic measures, it does not depend on the input
sequence. However, because there is body Di of output NchFET between VIN and Vo, there is electrical connection
(Di-connection) between VIN and Vo. Consequently, when the output is turned ON/OFF by VIN, reverse current flows
from Vo to VIN, to which care must be taken.
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7/14
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
●Timing Chart
EN
ON/OFF
VIN
VCC
EN
NRCS
Start up Time
Vo
t
VCC
ON/OFF
VIN
UVLO
hysteresis
VCC
EN
NRCS
Start up Time
Vo
t
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8/14
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
●Evaluation Board
■BD3506F Evaluation Board Circuit
U1
EN
1
VIN
2
Cin1
3
BD3506F
EN
VO2
VIN
VO1
FB
NRCS
Vo
8
7
R1
6
R2
GND
VCC
4
VCC
GND
CO
CNRCS
5
Ccc
■BD3506F Evaluation Board Application Components
Part No Value
Company
Parts Name
Part No
Value
Company
Parts Name
U1
-
ROHM
BD3506F
Ccc
1µF
MURATA
GRM18 Series
R1
3.3k
ROHM
MCR03Series
Cin1
10µF
MURATA
GRM21 Series
R2
3.9k
ROHM
MCR03Series
Co
220µF
SANYO,etc
2R5TPE220MF
C6
0.01µF
MURATA
GRM18 Series
■BD3506F Evaluation Board Layout
Silk Screen
TOP Layer
Bottom Layer
For Evaluation Board, BD3506EFV is available.
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9/14
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
●Recommended Circuits
R2
VOUT(1.2V)/2.5A
1
8
2
7
3
6
4
5
C3
+
Ven
C2
VIN
R1
C4
Vcc
Part No
R1/R2
C3
C1
C2
C4
C1
Value
Notes for use
The present IC can set output voltage by external reference voltage (VR) and value of output voltage
setting resistors (R1, R2). Output voltage can be set by VRxR2/(R1+R2) but it is recommended to
6.5k/5.5k
use at the resistance value (total: about 10 kΩ) which is not susceptible to VREF bias current (±100
nA).
100µF
Connect the output capacitor between Vo1, Vo2 terminals and GND terminal without fail in order to
stabilize output voltage. The output capacitor has a role to compensate for the phase of loop gain
and to reduce output voltage fluctuation when load is rapidly changed. When there is an
insufficient capacity value, there is a possibility to cause oscillation, and when the equivalent serial
resistance (ESR) of the capacitors is large, output voltage fluctuation is increased when load is
rapidly changed. About 100-µF high-performance electrolytic capacitors are recommended but
output capacitor greatly depends on temperature and load conditions. In addition, when only
ceramic capacitors with low ESR are used, or various capacitors are connected in series, the total
phase allowance of loop gain becomes not sufficient, and oscillation may result. Thoroughgoing
confirmation at application temperature and under load range conditions is requested.
0.1µF
The input capacitor plays a part to lower output impedance of a power supply connected to input
terminals (Vcc). When output impedance of this power supply increases, the input voltages (Vcc,)
become unstable and there is a possibility of giving rise to oscillation and degraded ripple rejection
characteristics. The use of capacitors of about 0.1 µF with low ESR, which provide less capacity
value changes caused by temperature changes, is recommended, but since input capacitor greatly
depends on characteristics of the power supply used for input, substrate wiring pattern,
thoroughgoing confirmation under the application temperature and load range, is requested.
10µF
The input capacitor plays a part to lower output impedance of a power supply connected to input
terminals (VIN). When output impedance of this power supply increases, the input voltages (VIN)
become unstable and there is a possibility of giving rise to oscillation and degraded ripple rejection
characteristics. The use of capacitors of about 10 µF with low ESR, which provide less capacity
value changes caused by temperature changes, is recommended, but since input capacitor greatly
depends on characteristics of the power supply used for input, substrate wiring pattern,
thoroughgoing confirmation under the application temperature and load range, is requested.
1µF
To the present IC, there mounted is a function (Non Rush Current on Start-up: NRCS) to prevent
rush current from VIN to load and output capacitor via Vo at the output voltage start-up. When the
EN terminal is reset from High or UVLO, constant current is allowed to flow from the NRCS terminal.
By this current, voltage generated at the NRCS terminal becomes the reference voltage and output
voltage is started. In order to stabilize the NRCS set time, it is recommended to use a capacitor (B
special) with less capacity value change caused by temperature change.
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10/14
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
●About heat loss
In designing heat, operate the apparatus within the following conditions.
(Because the following temperatures are warranted temperature, be sure to take margin, etc. into account.)
1. Ambient temperature Ta shall be not more than 100°C.
2. Chip junction temperature Tj shall be not more than 150°C.
Chip junction temperature Tj can be considered under the following two cases.
①Chip junction temperature Tj is found from
IC surface temperature TC under actual
application conditions:
Tj=TC+θj-c×W
<Reference value>
θj-c:SOP8 41.0℃/W
HTSSOP-B20 45.0℃/W
Substrate size:70×70×1.6mm
(Substrate surface capper
foil area:less3%)
θj-a:HTSSOP-B20 125.0℃/W
86.2℃/W
54.3℃/W
39.1℃/W
②Chip junction temperature Tj is found from ambient temperature Ta:
Tj=Ta+θj-a×W
<Reference value>
θj-a:SOP8 222.0℃/W (IC only)
181.0℃/W Single-layer substrate
(substrate surface copper foil area: less 3%)
Single-layer substrate
θj-a:HTSSOP-B20 125.0℃/W (substrate surface copper foil area: less 3%))
2nd-layer
2
86.2℃/W (substrate surface copper foil area:15×15mm )
2nd-layer
2
54.3℃/W (substrate surface copper foil area: 70×70mm )
4th-layer
2
39.1℃/W (substrate surface copper foil area: 70×70mm )
3
Substrate size 70×70×1.6mm (thermal vias in the board.)
Most of heat loss in BD3506F/EFV occurs at the output Nch FET. The power lost is determined by multiplying the voltage
between VIN and Vo by the output current. Confirm voltage and output current conditions of VIN and Vo used, and
collate them with the thermal derating characteristics. Because BD3506EFV employs the power PKG, the thermal
derating characteristics significantly vary in accord with the pc board conditions. When designing, care must be taken to
the size of a pc board to be used.
Power dissipation (W) = {Input voltage (VIN) – Output voltage (V0≒VREF)}×Io (averaged)
Ex.)
If VIN = 1.8 volts, V0=1.2 volts, and Io (averaged)=1.5 A, the power dissipation is given by the following:
Power dissipation (W) =(1.8 volts – 1.2 volts) × 1.5 (A)
= 0.9 W
●Equivalent Circuit
Vcc
Vcc
1kΩ
NRCS
1kΩ
10kΩ
1kΩ
VIN
1kΩ
1kΩ
10kΩ
1kΩ
Vcc
Vcc
1kΩ
VFB
Vo1
1kΩ
EN
350kΩ
Vo2
50kΩ
1kΩ
100kΩ
20pF
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100kΩ
11/14
10kΩ
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
●Notes for use
1. Input terminals (VCC,VIN,EN)
In the present IC, EN terminal, VIN terminal, and VCC terminal have an independent construction. In addition, in order to
prevent malfunction at the time of low input, the UVLO function is equipped with the VCC terminal. They begin to start
output voltage when all the terminals reach threshold voltage without depending on the input order of input terminals.
2. Operating range
Within the operating range, the operation and function of the circuits are generally guaranteed at an ambient temperature
within the range specified. The values specified for electrical characteristics may not be guaranteed, but drastic change
may not occur to such characteristics within the operating range.
3. Permissible dissipation
With respect to the permissible dissipation, the thermal derating characteristics are shown in the Exhibit, which we hope
would be used as a good-rule-of-thumb. Should the IC be used in such a manner to exceed the permissible dissipation,
reduction of current capacity due to chip temperature rise, and other degraded properties inherent to the IC would result.
You are strongly urged to use the IC within the permissible dissipation.
4. Built-in thermal shutdown protection circuit
The thermal shutdown circuit is first and foremost intended for interrupt IC from thermal runaway, and is not intended to
protect and warrant the IC. Consequently, never attempt to continuously use the IC after this circuit is activated or to use
the circuit with the activation of the circuit premised.
5. Inspection by set substrate
In the event a capacitor is connected to a pin with low impedance at the time of inspection with a set substrate, there is a
fear of applying stress to the IC. Therefore, be sure to discharge electricity for every process. As electrostatic
measures, provide grounding in the assembly process, and take utmost care in transportation and storage. Furthermore,
when the set substrate is connected to a jig in the inspection process, be sure to turn OFF power supply to connect the jig
and be sure to turn OFF power supply to remove the jig.
6. For the present product, thoroughgoing quality control is carried out, but in the event that applied voltage, working
temperature range, and other absolute maximum rating are exceeded, the present product may be destroyed. Because
it is unable to identify the short mode, open mode, etc., if any special mode is assumed, which exceeds the absolute
maximum rating, physical safety measures are requested to be taken, such as fuses, etc..
7. The use in the strong electromagnetic field may sometimes cause malfunction, to which care must be taken.
8. In the event that load containing a large inductance component is connected to the output terminal, and generation of
back-EMF at the start-up and when output is turned OFF is assumed, it is requested to insert a protection diode.
(Example)
OUTPUT
PIN
9. We are certain that examples of applied circuit diagrams are recommendable, but you are requested to thoroughly confirm
the characteristics before using the IC. In addition, when the IC is used with the external circuit changed, decide the IC
with sufficient margin provided while consideration is being given not only to static characteristics but also variations of
external parts and our IC including transient characteristics.
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12/14
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
+
10. The present IC is a monolithic IC and has P isolation between elements to separate elements and a P substrate.
With this P layer and N layer of each element, PN junction is formed, and various parasitic elements are formed.
For example, when resistors and transistors are connected to terminals as illustrated below,
○at the resistor, when GND>terminal A, and at transistor (NPN),
when GND>terminal B,PN junction works as a parasitic diode.
○at the transistor (NPN), when GND>terminal B,the parasitic NPN transistor is operated
by the N-layer of other element adjacent to the parasitic diode.
The parasitic element is inevitably formed because of the IC construction. The operation of the parasitic element gives
rise to mutual interference between circuits and results in malfunction, and eventually, breakdown. Consequently, take
utmost care not to use the IC to operate the parasitic element such as applying voltage lower than GND (P substrate) to
the input terminal.
Resistor
(PIN A)
NPN Transistor Structure (NPN)
(PIN A)
B
(PIN B)
C
E
Parasitic diode
GND
P+
P+
P
N
P+
N
N
P substrate
P+
N
N
N
P
GND
(PIN B)
N
Parasitic diode
C
B
P substrate
Parasitic diode
GND
E
GND
GND
Nearby other device
Parasitic diode
●Power Dissipation
SOP8
HTSSOPB-20
7.0
5.0
②5.90W
PCB①:θja=125.0℃/W
5.0
Power Dissipation :Pd (W)
Power Dissipation :Pd (W)
6.0
①5.50 W
4.0
3.0
100℃
2.0
PCB②:θja=86.2℃/W
4.0
PCB③:θja=54.3℃/W
PCB④:θja=39.1℃/W
④3.20W
3.0
③2.30W
2.0
②1.45W
①1.00W
1.0
1.0
0.0
0.0
0
25
50
75
100
125
150
0
Ambient Temperature:Ta(℃)
www.rohm.com
50
75
100
125
150
Ambient Temperature:Ta(℃)
measure:TH-156(Kuwano-Denki)
measure condition:Rohm Standard Board
PCB size:70mm×70mm×1.6mmt(PCB with Thermal Via)
PCB①:Single-layer substrate
PCB②:Double-layer substrate
(substrate surface copper foil area 15mm×15mm)
PCB③:Double-layer substrate
(substrate surface copper foil area 70mm×70mm)
PCB④:Fourth-layer substrate
(substrate surface copper foil area 70mm×70mm)
①Without heat sink
θj-a=222℃/W
②Mounted on board
70mm×70mm×1.6mm Glass-epoxy PCB
θj-a=181℃/W
© 2010 ROHM Co., Ltd. All rights reserved.
25
13/14
2010.05 - Rev.A
Technical Note
BD3506F,BD3506EFV
●Ordering part number
B
D
3
Part No.
5
0
6
Part No.
E
F
V
-
Package
F
: SOP8
EFV : HTSSOPB-20
E
2
Packaging and forming specification
E2: Embossed tape and reel
SOP8
<Tape and Reel information>
5.0±0.2
(MAX 5.35 include BURR)
6
5
6.2±0.3
4.4±0.2
0.3MIN
7
1 2
3
0.9±0.15
8
+6°
4° −4°
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
4
0.595
1.5±0.1
+0.1
0.17 -0.05
S
S
0.11
0.1
1.27
1pin
0.42±0.1
Reel
(Unit : mm)
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
HTSSOP-B20
<Tape and Reel information>
6.5±0.1
(MAX 6.85 include BURR)
(4.0)
1
1.0±0.2
(2.4)
6.4±0.2
0.5±0.15
11
4.4±0.1
20
Tape
Embossed carrier tape (with dry pack)
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
10
0.325
1.0MAX
+0.05
0.17 -0.03
0.85±0.05
0.08±0.05
S
0.08 S
0.65
+0.05
0.24 -0.04
1pin
(Unit : mm)
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© 2010 ROHM Co., Ltd. All rights reserved.
Reel
14/14
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
2010.05 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2010 ROHM Co., Ltd. All rights reserved.
R1010A