ROHM ND91361MUV-E2

Single-chip Type with Built-in FET Switching Regulators
Output 2A More
High-efficiency Step-down Switching Regulator
with Built-in Power MOS FET
BD91361MUV
No.10027EAT44
●Description
ROHM’s high efficiency step-down switching regulator BD91361MUV is a power supply designed to produce a low voltage
including 0.8 volts from 5.5/3.3 volts power supply line. Offers high efficiency with our original pulse skip control technology
and synchronous rectifier. Employs a current mode control system to provide faster transient response to sudden change in
load.
●Features
1) Offers fast transient response with current mode PWM control system.
2) Offers highly efficiency for all load range with synchronous rectifier (Nch/Nch FET)
TM
and SLLM (Simple Light Load Mode)
3) Incorporates soft-start function.
4) Incorporates thermal protection and ULVO functions.
5) Incorporates short-current protection circuit with time delay function.
6) Incorporates shutdown function Icc=0µA(Typ.)
7) Employs small surface mount package: VQFN020V4040
●Applications
Power supply for LSI including DSP, Micro computer and ASIC
●Absolute maximum rating (Ta=25℃)
Parameter
Symbol
Ratings
Unit
VCC
-0.3~+7 *1
V
PVCC Voltage
PVCC
-0.3~+7 *1
V
BST Voltage
VBST
-0.3~+13
V
VBST-SW
-0.3~+7
V
VEN
-0.3~+7
V
VSW, VITH
-0.3~+7
V
Power Dissipation 1
Pd1
0.34 *2
W
Power Dissipation 2
Pd2
0.70 *3
W
Power Dissipation 3
Pd3
2.21 *4
W
Power Dissipation 4
Pd4
3.56 *5
W
Operating temperature range
Topr
-40~+105
℃
Storage temperature range
Tstg
-55~+150
℃
Tj
+150
℃
VCC Voltage
BST_SW Voltage
EN Voltage
SW,ITH Voltage
Maximum junction temperature
*1
*2
*3
*4
*5
Pd should not be exceeded.
IC only
1-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 10.29mm2
4-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, 1st and 4th copper foil area : 10.29mm2 , 2nd and 3rd copper foil area : 5505mm2
4-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 5505mm2, in each layers
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1/17
2010.06 - Rev.A
BD91361MUV
Technical Note
●Operating conditions (Ta=-40~+105℃)
Parameter
Symbol
Ratings
Unit
Min.
Typ.
Max.
VCC
2.7
3.3
5.5
V
PVCC
2.7
3.3
5.5
V
VEN
0
-
5.5
V
VID<1:0>
0
-
5.5
V
VOUT
0.8
-
3.3*6
V
ISW
-
-
4.0*7
A
Power Supply Voltage
EN Voltage
Logic input voltage
Output voltage Setting Range
SW average output current
*6 In case set output voltage 1.6V or more, VCCMin = Vout+1.2V.
*7 Pd should not be exceeded.
●Electrical characteristics
◎BD91361MUV (Ta=25℃ VCC=PVCC=3.3V, EN=VCC, R1=10kΩ, R2=5kΩ, unless otherwise specified.)
Limits
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max.
Standby current
ISTB
-
0
10
µA
Active current
ICC
-
250
500
µA
EN Low voltage
VENL
-
GND
0.8
V
Standby mode
EN High voltage
VENH
2.0
Vcc
-
V
Active mode
EN input current
IEN
-
3
10
µA
VEN=3.3V
VID Low voltage
VVIDL
-
GND
0.8
VID High voltage
VVIDH
2.0
Vcc
-
VID input current
IVID
-
3
10
Oscillation frequency
FOSC
0.8
1
1.2
MHz
High side FET ON resistance
RONH
-
60
90
mΩ
PVCC=3.3V
Low side FET ON resistance
RONL
-
55
85
mΩ
PVCC=3.3V
ADJ Voltage
VADJ
0.788
0.800
0.812
V
VID<1:0>=(0,0)
ITH SInk current
ITHSI
10
18
-
µA
VADJ=1V
ITH Source Current
ITHSO
10
18
-
µA
VADJ=0.6V
UVLO threshold voltage
VUVLO1
2.400
2.500
2.600
V
VCC=3.3V→0V
UVLO release voltage
VUVLO2
2.425
2.550
2.700
V
VCC=0V→3.3V
TSS
0.5
1
2
ms
TLATCH
0.5
1
2
ms
VSCP
-
0.40
0.56
V
Soft start time
Timer latch time
Output Short circuit Threshold Voltage
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2/17
EN=GND
VVID=3V
VADJ =0.8V→0V
2010.06 - Rev.A
BD91361MUV
Technical Note
●Block Diagram, Application Circuit
4.0±0.1
【BD91361MUV】
4.0±0.1
V CC
D9136
EN
1
VCC
VREF
1.0Max.
Lot No.
S
C0.2 2.1±0.1
6
16
1.0
10
0.5
+
VID<1>
R Q
Current
Sense/
Protect
PVCC
S
SLOPE
Gm Amp
CLK
OSC
VCC
+
5
20
15
SELECTOR
Input
SW
+
Driver
Logic
Output
PVCC
PGND
UVLO
Soft
Start
2.1±0.1
0.4±0.1
1
Current Comp
VID<0>
0.02 +0.03
-0.02
(0.22)
0.08 S
BST
TSD
GND
SCP
11
ITH
ADJ
0.25 +0.05
-0.04
R2
VQFN020V4040 (Unit : mm)
Fig.1 TOP View
RITH CITH
R1
Fig.2 Block Diagram
●Pin No. & function table
Pin
No.
Pin
name
Pin
No.
Pin
name
1
SW
SW pin
11
GND
Ground
2
SW
SW pin
12
ADJ
Output voltage detect pin
3
SW
SW pin
13
ITH
GmAmp output pin/Connected phase
compensation capacitor
4
SW
SW pin
14
VID<1>
Output voltage control pin<1>
5
SW
SW pin
15
VID<0>
Output voltage control pin<0>
6
PVCC
Highside FET source pin
16
N.C.
7
PVCC
Highside FET source pin
17
EN
Enable pin(High Active)
8
PVCC
Highside FET source pin
18
PGND
Lowside FET source pin
9
BST
Bootstrapped voltage input pin
19
PGND
Lowside source pin
10
VCC
VCC power supply input pin
20
PGND
Lowside source pin
Function
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3/17
Function
Non Connection
2010.06 - Rev.A
BD91361MUV
Technical Note
●Characteristic curves (Reference data)
2.0
2.0
2.0
【VOUT=1.2V】
1.2
0.8
0.4
Ta=25℃
Io=3A
0.0
1.6
1.2
1
2
3
4
INPUT VOLTAGE:VCC[V]
0.8
VCC=5V
Ta=25℃
Io=0A
1
2
3
EN VOLTAGE:VEN[V]
4
5
0
1.21
1.20
1.19
1.18
VCC=5V
Io=0A
80
70
60
50
VCC=5V
Ta=25℃
40
1.15
0
20
40
60
80
TEMPERATURE:Ta[℃]
1000
FREQUENCY:FOSC[kHz]
EFFICIENCY:η[%]
1.22
-20
100
800
600
400
200
30
VCC=5V
0
10
100
1000
OUTPUT CURRENT:IOUT[mA]
Fig. 6 Ta-VOUT
10000
-40
-20
0
20
40
60
80
100
TEMPERATURE:Ta[℃]
Fig.8 Ta-Fosc
Fig.7 Efficiency
400
80
2.0
350
1.8
High side
Low side
50
VCC=3.3V
-20
0
20
40
60
TEMPERATURE:Ta[℃]
80
100
Fig.9Ta-RONN,RONP
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EN VOLTAGE:VEN[V]
60
CIRCUIT CURRENT:Icc[μA]
1.6
70
40
-40
10
1200
90
-40
4
6
8
OUTPUT CURRENT:IOUT[A]
【VOUT=1.2】
1.23
1.16
2
Fig.5 IOUT-VOUT
100
【VOUT=1.2V】
1.17
VCC=
5.5V
Fig.4 VEN-VOUT
1.25
OUTPUT VOLTAGE:VOUT[V]
0.4
0.0
0
Fig.3 Vcc-VouT
1.24
VCC=2.7V
0.8
0.4
5
Ta=25℃
1.2
0.0
0
ON RESISTANCE:R ON [Ω]
【VOUT=1.2V】
1.6
OUTPUT VOLTAGE:VOUT[V]
1.6
OUTPUT VOLTAGE:VOUT[V]
OUTPUT VOLTAGE:VOUT[V]
【VOUT=1.2V】
1.4
1.2
1.0
0.8
0.6
0.4
VCC=5V
0.2
-20
0
20
40
60
TEMPERATURE:Ta[℃]
Fig.10 Ta-VEN
4/17
80
250
200
150
100
VCC=5V
50
0.0
-40
300
100
0
-40
-20
0
20
40
60
80
100
TEMPERATURE:Ta[℃]
Fig.11 Ta-ICC
2010.06 - Rev.A
Technical Note
BD91361MUV
1.1
【SLLMTM control
FREQUENCY:FOSC[MHz]
【VOUT=1.2V】
VCC=PVCC
=EN
1
VOUT=1.2V】
SW
0.9
0.8
VOUT
Ta=25℃
VOUT
VCC=5V
Ta=25℃
Io=0A
0.7
2.7
3.4
4.1
4.8
INPUT VOLTAGE:VCC[V]
5.5
Fig.12 Power supply voltageOperating frequency
【PWM control
VCC=5V
Ta=25℃
Fig.13 Soft start waveform
VOUT=1.2V】
【VOUT=1.2V】
【VOUT=1.2V】
VOUT
SW
Fig.14 SW waveform Io=0mA
VOUT
IOUT
VCC=5V
Ta=25℃
VCC=5V
Ta=25℃
Fig.15 SW waveform Io=4A
Fig. 16 Transient Response
Io=1A→4A(20µs)
【VOUT=1.2V】
IOUT
VCC=5V
Ta=25℃
Fig.17 Transient Response
Io=4A→1A(20µs)
【VOUT=1.2V】
VID[1:0]=(1,1)→(0,0)
VID[1:0]=(0,0)→(1,1)
1.44V
1.44V
1.2V
1.2V
Fig.18 Change Response
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Fig.19 Change Response
5/17
2010.06 - Rev.A
BD91361MUV
Technical Note
●Information on advantages
Advantage 1 : Offers fast transient response with current mode control system.
BD91361MUV (Load response IO=1A→3A)
Conventional product (Load response IO=1A→3A)
VOUT
VOUT
62mV
145mV
IOUT
IOUT
Voltage drop due to sudden change in load was reduced by about 50%.
Fig.20 Comparison of transient response
Advantage 2 :
Offers high efficiency for all load range.
・For lighter load:
Utilizes the current mode control mode called SLLM for lighter load, which reduces various dissipation such as switching
dissipation (PSW), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and on-resistance
dissipation (PRON) that may otherwise cause degradation in efficiency for lighter load.
Achieves efficiency improvement for lighter load.
・For heavier load:
Utilizes the synchronous rectifying mode and the low on-resistance MOS FETs incorporated as power transistor.
ON resistance of High side MOS FET : 82mΩ(Typ.)
ON resistance of Low side MOS FET : 70mΩ(Typ.)
100
Efficiency η[%]
SLLMTM
Achieves efficiency improvement for heavier load.
Offers high efficiency for all load range with the improvements mentioned above.
②
50
①
PWM
①inprovement by SLLM system
②improvement by synchronous rectifier
0
0.001
0.01
0.1
Output current Io[A]
1
Fig.21 Efficiency
Advantage 3 : ・Supplied in smaller package due to small-sized power MOS FET incorporated.
・Output capacitor Co required for current mode control: 22µF ceramic capacitor
・Inductance L required for the operating frequency of 1 MHz: 2.2µH inductor
・Incorporates FET + Boot strap diode
Reduces a mounting area required.
V CC
EN
20mm
VCC
VREF
BST
Current Comp
VID<0>
SELECTOR
+
VID<1>
Gm Amp
+
Soft
Start
PVCC
R Q
Current
S
Sense/
Protect
SW
SLOPE
VCC
CLK
UVLO
TSD
SCP
+
Driver
Logic
Input
Rf
Output
15mm
PVCC
R1
R2
PGND
GND
Cf C BST
L
CIN
R ITH
CITH
Co
ITH
ADJ
R2
R ITH CITH
R1
Fig.22 Example application
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6/17
2010.06 - Rev.A
BD91361MUV
Technical Note
●Operation
BD91361MUV is a synchronous rectifying step-down switching regulator that achieves faster transient response by
employing current mode PWM control system. It utilizes switching operation in PWM (Pulse Width Modulation) mode for
heavier load, while it utilizes SLLM (Simple Light Load Mode) operation for lighter load to improve efficiency.
○Synchronous rectifier
It does not require the power to be dissipated by a rectifier externally connected to a conventional DC/DC converter IC,
and its P.N junction shoot-through protection circuit limits the shoot-through current during operation, by which the power
dissipation of the set is reduced.
○Current mode PWM control
Synthesizes a PWM control signal with a inductor current feedback loop added to the voltage feedback.
・PWM (Pulse Width Modulation) control
The oscillation frequency for PWM is 1 MHz. SET signal form OSC turns ON a highside MOS FET (while a lowside
MOS FET is turned OFF), and an inductor current IL increases. The current comparator (Current Comp) receives two
signals, a current feedback control signal (SENSE: Voltage converted from IL) and a voltage feedback control signal
(FB), and issues a RESET signal if both input signals are identical to each other, and turns OFF the highside MOS FET
(while a lowside MOS FET is turned ON) for the rest of the fixed period. The PWM control repeat this operation.
・SLLMTM (Simple Light Load Mode) control
When the control mode is shifted from PWM for heavier load to the one for lighter load or vise versa, the switching pulse
is designed to turn OFF with the device held operated in normal PWM control loop, which allows linear operation without
voltage drop or deterioration in transient response during the mode switching from light load to heavy load or vise versa.
Although the PWM control loop continues to operate with a SET signal from OSC and a RESET signal from Current
Comp, it is so designed that the RESET signal is held issued if shifted to the light load mode, with which the switching is
tuned OFF and the switching pulses are thinned out under control. Activating the switching intermittently reduces the
switching dissipation and improves the efficiency.
SENSE
Current
Comp
RESET
VOUT
Level
Shift
R Q
FB
SET
Gm Amp.
S
IL
Driver
Logic
VOUT
SW
Load
OSC
ITH
Fig.23 Diagram of current mode PWM control
PVCC
Current
Comp
SENSE
PVCC
SENSE
Current
Comp
FB
FB
SET
GND
SET
GND
RESET
GND
RESET
GND
SW
GND
SW
IL
GND
IL(AVE)
IL
0A
VOUT
VOUT(AVE)
VOUT
VOUT(AVE)
Not switching
Fig.24 PWM switching timing chart
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Fig.25 SLLM
7/17
TM
switching timing chart
2010.06 - Rev.A
BD91361MUV
Technical Note
●Description of operations
・Soft-start function
EN terminal shifted to “High” activates a soft-starter to gradually establish the output voltage with the current limited during
startup, by which it is possible to prevent an overshoot of output voltage and an inrush current.
・Shutdown function
With EN terminal shifted to “Low”, the device turns to Standby Mode, and all the function blocks including reference
voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0µF (Typ.).
・UVLO function
Detects whether the input voltage sufficient to secure the output voltage of this IC is supplied. And the hysteresis width of
50mV (Typ.) is provided to prevent output chattering.
Hysteresis 50mV
VCC
EN
VOUT
Tss
Tss
Tss
Soft start
Standby mode
Operating mode
Standby
mode
Operating mode
UVLO
UVLO
Standby
mode
Operating mode
EN
Standby mode
UVLO
Fig.26 Soft start, Shutdown, UVLO timing chart
・Short-current protection circuit with time delay function
Turns OFF the output to protect the IC from breakdown when the incorporated current limiter is activated continuously for
the fixed time(TLATCH) or more. The output thus held tuned OFF may be recovered by restarting EN or by re-unlocking
UVLO.
EN
1msec
VOUT
Output Current in non-control
1/2VOUT
Until output voltage goes up the half of
Vo or over, timer latch is not operated.
(No timer latch, only limit to the output current)
Limit
Output voltage OFF Latch
IL
Output Current in control by limit value
(With fall of the output voltage, limit value goes down)
Standby mode
Operated mode
Standby mode
EN
Timer Latch
Operated mode
EN
Fig.27 Short-current protection circuit with time delay timing chart
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8/17
2010.06 - Rev.A
BD91361MUV
Technical Note
●Switching regulator efficiency
Efficiency ŋ may be expressed by the equation shown below:
η=
VOUT×IOUT
×100[%]=
POUT
×100[%]=
POUT
×100[%]
Vin×Iin
Pin
POUT+PDα
Efficiency may be improved by reducing the switching regulator power dissipation factors PDα as follows:
Dissipation factors:
1) ON resistance dissipation of inductor and FET : PD(I2R)
2) Gate charge/discharge dissipation : PD(Gate)
3) Switching dissipation : PD(SW)
4) ESR dissipation of capacitor : PD(ESR)
5) Operating current dissipation of IC : PD(IC)
2
2
1)PD(I R)=IOUT ×(RCOIL+RON) (RCOIL[Ω] : DC resistance of inductor, RON[Ω] :
ON resistance of FET, IOUT[A] : Output current.)
2)PD(Gate)=Cgs×f×V (Cgs[F] : Gate capacitance of FET, f[H] : Switching frequency, V[V] : Gate driving voltage of FET)
2
Vin ×CRSS×IOUT×f
3)PD(SW)=
(CRSS[F]:Reverse transfer capacitance of FET, IDRIVE[A]:Peak current of gate.)
IDRIVE
2
4)PD(ESR)=IRMS ×ESR (IRMS[A] : Ripple current of capacitor, ESR[Ω] : Equivalent series resistance.)
5)PD(IC)=Vin×ICC (ICC[A] : Circuit current.)
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9/17
2010.06 - Rev.A
BD91361MUV
Technical Note
●About setting the output voltage
Output voltage shifts step by step as often as bit setting to control the overshoot/undershoot that happen when changing the
setting value of output voltage. From the bit switching until output voltage reach to setting value, 8 steps(max) delay will
occur.
(0,1)
VID<2:0>
(1,1)
0.96V
0.72V
VOUT
tVID (max)=0.04ms
ⅰ) Switching 2 bit synchronously
ⅲ) Switching the bit during counting
VID<1>
<1>
VID<0>
<0>
Count STOP
Count STOP
VOUT
VOUT
5µs(max)
About 10µs from bit switching
About 10µs from bit switching
ⅱ) Switching 2 bit with the time lag
VID<1>
VID<0>
Count STOP
VOUT
About 10µs from switching the last bit
Fig.28 Timing chart of setting the output voltage
It is possible to set output voltage, shown the diagram 1 below, by setting VID<0>~<1> 0 or 1.
VID<1:0> terminal is set to VID<1:0>=(0,0) originally by the pull down resistor with high impedance inside IC.
By pulling up/ pulling down about 10kΩ, the original value is changeable optionally.
VID<1>
Diagram 1. Table of output voltage setting
VID<0>
VOUT
0
0
VOUT
0
1
0.9*VOUT
1
0
1.1*VOUT
1
1
1.2*VOUT
*After 10µs(max) from the bit change, VOUT change starts.
*Requiring time for one step (10% shift of VOUT) of VOUT is 10µs(max).
*From the bit switching until output voltage reach to setting value, tVID(max)=0.04ms delay will occur.
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10/17
2010.06 - Rev.A
BD91361MUV
Technical Note
●Consideration on permissible dissipation and heat generation
As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is
needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input
voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation
must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
4
2
① 4 layers (Copper foil area : 5505mm )
copper foil in each layers.
θj-a=35.1℃/W
st
th
2
② 4 layers (1 and 4 copper foil area : 10.29m )
nd
rd
2
(2 and 3 copper foil area: 5505m )
θj-a=56.6℃/W
2
③ 1 layer (Copper foil area : 10.29m )
θj-a=178.6℃/W
④ IC only.
θj-a=367.6℃/W
Power dissipation:Pd [W]
①3.56W
3
②2.21W
2
P=IOUT ×RON
RON=D×RONP+(1-D)RONN
D
: ON duty (=VOUT/VCC)
RONH : ON resistance of Highside MOS FET
RONL : ON resistance of Lowside MOS FET
IOUT : Output current
2
1
③0.70W
④0.34W
0
0
25
50
75
100 105
125
150
Ambient temperature:Ta [℃]
Fig.29 Thermal derating curve
(VQFN020V4040)
If VCC=3.3V, VOUT=1.8V, RONH=60mΩ, RONL=55mΩ
IOUT=4A, for example,
D=VOUT/VCC=1.8/3.3=0.545
RON=0.545×0.06+(1-0.545)×0.055
=0.0327+0.0250
=0.0577[Ω]
2
P=4 ×0.0577=0.2309[W]
As RONH is greater than RONL in this IC, the dissipation increases as the ON duty becomes greater.
With the consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
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11/17
2010.06 - Rev.A
BD91361MUV
Technical Note
●Selection of components externally connected
1. Selection of inductor (L)
The inductance significantly depends on output ripple current.
As seen in the equation (1), the ripple current decreases as
the inductor and/or switching frequency increases.
IL
ΔIL
VCC
ΔIL=
IL
(VCC-VOUT)×VOUT
L×VCC×f
[A]・・・(1)
Appropriate ripple current at output should be 20% more or less of
the maximum output current.
VOUT
L
ΔIL=0.2×IOUTmax. [A]・・・(2)
Co
L=
(VCC-VOUT)×VOUT
ΔIL×VCC×f
[H]・・・(3)
(ΔIL: Output ripple current, and f: Switching frequency)
Fig.30 Output ripple current
※Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases
efficiency. The inductor must be selected allowing sufficient margin with which the peak current may not exceed its
current rating.
If
VCC=5.0V, VOUT=1.2V, f=1MHz, ΔIL=0.2×3A=0.6A, for example,(BD91361MUV)
(5-1.2)×1.2
L=
=1.52µ → 2.0[µH]
0.6×5×1M
※Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor for
better efficiency.
2. Selection of output capacitor (CO)
VCC
Output capacitor should be selected with the consideration on the stability
region and the equivalent series resistance required to smooth ripple voltage.
Output ripple voltage is determined by the equation (4) :
VOUT
L
ESR
ΔVOUT=ΔIL×ESR [V]・・・(4)
Co
(ΔIL: Output ripple current, ESR: Equivalent series resistance of output capacitor)
※Rating of the capacitor should be determined allowing sufficient margin
against output voltage. A 22µF to 100µF ceramic capacitor is recommended.
Less ESR allows reduction in output ripple voltage.
Fig.31 Output capacitor
3. Selection of input capacitor (Cin)
VCC
Input capacitor to select must be a low ESR capacitor of the capacitance
sufficient to cope with high ripple current to prevent high transient voltage.
The ripple current IRMS is given by the equation (5):
Cin
VOUT
L
Co
IRMS=IOUT×
√VOUT(VCC-VOUT)
VCC
< Worst case > IRMS(max.)
When Vcc=2×VOUT, IRMS=
Fig.32 Input capacitor
[A]・・・(5)
IOUT
2
If VCC=3.3V, VOUT=1.8V, and IOUTmax.=3A, (BD91361MUV)
IRMS=2×
√1.8(3.3-1.8)
3.3
=1.49[ARMS]
A low ESR 22µF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better efficiency.
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12/17
2010.06 - Rev.A
BD91361MUV
Technical Note
4. Determination of RITH, CITH that works as a phase compensator
As the Current Mode Control is designed to limit a inductor current, a pole (phase lag) appears in the low frequency area
due to a CR filter consisting of a output capacitor and a load resistance, while a zero (phase lead) appears in the high
frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero to the
power amplifier output with C and R as described below to cancel a pole at the power amplifier.
fp(Min.)
1
2π×RO×CO
1
fz(ESR)=
2π×ESR×CO
fp=
A
fp(Max.)
Gain
[dB]
0
fz(ESR)
IOUTMin.
Phase
[deg]
Pole at power amplifier
IOUTMax.
When the output current decreases, the load resistance
Ro increases and the pole frequency lowers.
0
-90
fp(Min.)=
1
[Hz]←with lighter load
2π×ROMax.×CO
fp(Max.)=
1
2π×ROMin.×CO
Fig.33 Open loop gain characteristics
A
fz(Amp.)
[Hz] ←with heavier load
Zero at power amplifier
Gain
[dB]
Increasing capacitance of the output capacitor lowers the
pole frequency while the zero frequency does not change.
(This is because when the capacitance is doubled, the capacitor
ESR reduces to half.)
0
0
Phase
[deg]
-90
fz(Amp.)=
1
2π×RITH×CITH
Fig.34 Error amp phase compensation characteristics
Rf
Cin
VCC
VOUT
EN
ADJ
ITH
R2
R1
RITH
CITH
PVCC
Cf
VCC
CBST
L
VID<1> VID<0> GND,PGND
SW
VOUT
ESR
VCC
VCC
RO
CO
Fig.35 Typical application
Stable feedback loop may be achieved by canceling the pole fp (Min.) produced by the output capacitor and the load
resistance with CR zero correction by the error amplifier.
fz(Amp.)= fp(Min.)
1
2π×RITH×CITH
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=
1
2π×ROMax.×CO
13/17
2010.06 - Rev.A
BD91361MUV
Technical Note
5. Determination of output voltage
The output voltage VOUT is determined by the equation (6):
VOUT=(R2/R1+1)×VADJ・・・(6) VADJ: Voltage at ADJ terminal (0.8V Typ.)
With R1 and R2 adjusted, the output voltage may be determined as required.
L
Output
6
SW
Co
R2
1
Adjustable output voltage range : 0.8V~3.3V
ADJ
R1
Fig.36 Determination of output voltage
Use 1 kΩ~100 kΩ resistor for R1.
If a resistor of the resistance higher than 100 kΩ is used, check the assembled set carefully for ripple voltage etc.
3.7
3.5
INPUT VOLTAGE : VCC[V]
The lower limit of input voltage depends on the output voltage.
Basically, it is recommended to use in the condition :
VCCmin = VOUT+1.2V.
Fig.37. shows the necessary output current value at the lower limit
of input voltage. (DCR of inductor : 20mΩ)
This data is the characteristic value, so it’ doesn’t guarantee the
operation range,
Vo=2.5V
3.3
Vo=2.0V
3.1
Vo=1.8V
2.9
2.7
0
1
2
3
OUTPUT CURRENT : IOUT[A]
Fig.37 minimum input voltage in each output voltage
●BD91361MUV Cautions on PC board layout
Fig.38 Layout diagram
①Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor Co closer to
the pin PGND.
②Lay out CITH and RITH between the pins ITH and GND as neat as possible with least necessary wiring.
※VQFN020V4040 (BD91361MUV) has thermal PAD on the reverse of the package.
The package thermal performance may be enhanced by bonding the PAD to GND plane which take a large area of PCB.
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14/17
2010.06 - Rev.A
BD91361MUV
Technical Note
●Recommended components Lists on above application
Symbol
Value
Manufacturer
Coil
2.0uH
Sumida
CDR6D28MNNP-2R0NC
CIN
Ceramic capacitor
22uF
Murata
GRM32EB11A226KE20
CO
Ceramic capacitor
22uF
Murata
GRM31CB30J226KE18
CITH
Ceramic capacitor
1000pF
Murata
CRM18 Series
6.8kΩ
Rohm
L
Part
VOUT=1.2V
RITH
Resistance
Cf
Ceramic capacitor
Rf
CBST
Series
MCR03 Series
1000 pF
Murata
GRM18 Series
Resistance
10Ω
Rohm
MCR03 Series
Ceramic capacitor
0.1uF
Murata
GRM18 Series
※The parts list presented above is an example of recommended parts. Although the parts are sound, actual circuit
characteristics should be checked on your application carefully before use. Be sure to allow sufficient margins to
accommodate variations between external devices and this IC when employing the depicted circuit with other circuit
constants modified. Both static and transient characteristics should be considered in establishing these margins. When
switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and
PVCC pins, and a schottky barrier diode or snubber established between the SW and PGND pins.
●I/O equivalence circuit
・EN pin
・SW pin
PVCC
PVCC
PVCC
EN
SW
・ADJ pin
・ITH pin
VCC
ADJ
ITH
・BST pin
・VID pin ( VID<0>, VID<1> are the same composition
PVCC
PVCC
BST
VID
SW
Fig.39 I/O equivalence circuit
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15/17
2010.06 - Rev.A
Technical Note
BD91361MUV
●Notes for use
1. Absolute Maximum Ratings
While utmost care is taken to quality control of this product, any application that may exceed some of the absolute
maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken,
short-mode or open-mode may not be identified. So if it is expected to encounter with special mode that may exceed the
absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of fuses.
2. Electrical potential at GND
GND must be designed to have the lowest electrical potential In any operating conditions.
3. Short-circuiting between terminals, and mismounting
When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may
result in IC breakdown. Short-circuiting due to foreign matters entered between output terminals, or between output and
power supply or GND may also cause breakdown.
4. Thermal shutdown protection circuit
Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to
protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not be
used thereafter for any operation originally intended.
5. Inspection with the IC set to a pc board
If a capacitor must be connected to the pin of lower impedance during inspection with the IC set to a pc board, the
capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper
grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in the
inspection process, be sure to turn OFF the power supply before it is connected and removed.
6. Input to IC terminals
+
This is a monolithic IC with P isolation between P-substrate and each element as illustrated below.
This P-layer and the N-layer of each element form a P-N junction, and various parasitic elements are formed.
If a resistor is joined to a transistor terminal as shown in Fig 40.
○P-N junction works as a parasitic diode if the following relationship is satisfied;
GND>Terminal A (at resistor side), or GND>Terminal B (at transistor side); and
○if GND>Terminal B (at NPN transistor side),
a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode.
The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits,
and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such
manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in
activation of parasitic elements.
Resistor
Transistor (NPN)
Pin A
Pin B
C
Pin B
B
E
Pin A
N
P+ N
P+
P
N
N
Parasitic
element
P+
N
B
GND
N
P substrate
Psubstrate
Parasitic element
P+
P
Parasitic element
GND
GND
C
E
Parasitic
element
GND
Other adjacent elements
Fig.40 Simplified structure of monorisic IC
7. Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the
small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
8 . Selection of inductor
It is recommended to use an inductor with a series resistance element (DCR) 50mΩ or less. Especially, in case output
voltage is set 1.6V or more, note that use of a high DCR inductor will cause an inductor loss, resulting in decreased output
voltage. Should this condition continue for a specified period (soft start time + timer latch time), output short circuit
protection will be activated and output will be latched OFF. When using an inductor over 50mΩ, be careful to ensure
adequate margins for variation between external devices and this IC, including transient as well as static characteristics.
Furthermore, in any case, it is recommended to start up the output with EN after supply voltage is within operation range.
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16/17
2010.06 - Rev.A
BD91361MUV
Technical Note
●Ordering part number
B
D
9
Part No.
1
3
6
1
M
Part No.
91361
U
V
-
Package
MUV : VQFN020V4040
E
2
Packaging and forming specification
E2: Embossed tape and reel
(36: Adjustable (0.8 ~ 3.3V))
VQFN020V4040
<Tape and Reel information>
4.0±0.1
4.0±0.1
2.1±0.1
0.5
0.4±0.1
1
6
16
1.0
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
5
20
10
15
2500pcs
(0.22)
S
C0.2
Embossed carrier tape
Quantity
11
2.1±0.1
0.08
S
+0.03
0.02 -0.02
1.0MAX
1PIN MARK
Tape
+0.05
0.25 -0.04
1pin
Reel
(Unit : mm)
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17/17
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
2010.06 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
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R1010A