SMD Efficient Fast Recovery Rectifiers

COMCHIP
SMD Effici en t Fast Reco ver y Rect ifier s
SMD Diodes Specialist
CEFC301-G Thru. CEFC305-G
Reverse Voltage: 50 to 600 Volts
Forward Current: 3.0 Amp
RoHS Device
Features
DO-214AB (SMC)
-Ideal for surface mount applications.
-Easy pick and place.
0.280(7.11)
0.260(6.60)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.245(6.22)
0.220(5.59)
0.124(3.15)
0.108(2.75)
-Super fast recovery time for high efficient.
-Built-in strain relief.
-Low forward voltage drop.
0.320(8.13)
0.305(7.75)
Mechanical data
-Case: JEDEC DO-214AB, molded plastic.
0.012(0.31)
0.006(0.15)
0.103(2.62)
0.079(2.00)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.050(1.27)
0.030(0.76)
0.008(0.20)
0.004(0.10)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.21 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Symbol CEFC301-G CEFC302-G CEFC303-G CEFC304-G CEFC305-G Units
Max. repetitive peak reverse voltage
V RRM
50
100
200
400
600
V
Max. DC blocking voltage
V DC
50
100
200
400
600
V
Max. RMS voltage
V RMS
35
70
140
280
420
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
I FSM
150
A
Max. average forward current
IO
3.0
A
Max. instantaneous forward voltage at
3.0A
VF
Reverse recovery time
T rr
Max. DC reverse current at T A =25 OC
rated DC blocking voltage T A =100 OC
IR
10
200
RθJL
55
TJ
150
O
C
T STG
-55 to +150
O
C
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
0.9
1.3
50
1.7
V
75
nS
μA
O
C/W
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm 2 copper pad area.
REV:A
Page 1
QW-BE005
Comchip Technology CO., LTD.
COMCHIP
SMD Effici en t Fast Reco ver y Rect ifier s
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CEFC301-G thru CEFC305-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
100
10
CEFC301-G~303-G
CEFC304-G
F o r w a rd C u rren t (A)
Rever s e C urr e n t (μA )
10
T J =125 OC
1
T J =75 OC
T J =25 OC
1
CEFC305-G
0.1
0.01
0.1
T J =25 OC
Pulse width 300μS
4% duty cycle
0.01
0.001
0
20
40
60
80
100
120
0
140
0.4
0.8
1.6
1.2
2.0
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Junction Capacitance
Fig.4 Non-repetitive Forward Surge Current
200
100
Peak Forward Surge Current ( A)
O
J u n c ti o n C apaci t ance (p F )
100
10
T J =25 OC
f=1MHz and applied
4VDC reverse voltage
T J =25 C
8.3ms single half sine
wave, JEDEC method
80
60
40
20
0
2
0.1
1
10
100
1
10
100
Number of Cycles at 60Hz
Reverse Voltage (V)
Fig.6 Current Derating Curve
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
3.5
trr
10Ω
NONINDUCTIVE
Average Forward Current (A)
50Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
1Ω
NONINDUCTIVE
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
(+)
OSCILLLISCOPE
(NOTE 1)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
3.0
2.5
2.0
1.5
Single phase
Half wave 60Hz
1.0
0.5
0
0
1cm
Set time base for
50 / 10nS / cm
25
50
75
100
125
150
175
Ambient Temperature ( OC)
REV:A
Page 2
QW-BE005
Comchip Technology CO., LTD.