COMCHIP SMD Super Fast Recovery Rectifiers SMD Diodes Specialist CSFM101-G Thru. CSFM105-G Reverse Voltage: 50 to 600 Volts Forward Current: 1.0 Amp RoHS Device Features Mini SMA -Ideal for surface mount applications. 0.154(3.9) 0.138(3.5) 0.012(0.3) Typ. -Easy pick and place. -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.071(1.8) 0.055(1.4) -Super fast recovery time 35nS. -Built-in strain relief. -Low forward voltage drop. 0.126(3.2) 0.110(2.8) Mechanical data 0.067(1.7) 0.051(1.3) -Case: Molded plastic, JEDEC SOD-123/Mini SMA. -Terminals: Solderable per MIL-STD-750, method 2026. 0.035(0.9) Typ. 0.035(0.9) Typ. -Polarity: Indicated by cathode band. -Weight: 0.04 grams approx. Maximum Ratings (at T A=25 Dimensions in inches and (millimeter) O Parameter C unless otherwise noted) CSFM Symbol 101-G CSFM 102-G CSFM 103-G CSFM 104-G CSFM 105-G Unit Max. repetitive peak reverse voltage V RRM 50 100 200 400 600 V Max. DC blocking voltage V DC 50 100 200 400 600 V Max. RMS voltage V RMS 35 70 140 280 420 V Max. averaged forward current IO Maximum Instantaneous forward voltage at I F =1.0A VF Forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) 1.0 0.95 A 1.25 1.70 V I FSM 25 A Reverse recovery time T rr 35 nS Reverse current at rated @T A =25 OC O DC blocking voltage @ T A =100 C IR 5.0 100 μA R θJA 42 TJ 150 O C T STG -55 to +150 O C Max. thermal resistance (Note 1) Operating junction temperature Storage temperature range O C/W Note 1: Thermal resistance from junction ambient. REV:B Page 1 QW-BS005 Comchip Technology CO., LTD. COMCHIP SMD Super Fast Recovery Rectifiers SMD Diodes Specialist Rating and Characteristic Curves (CSFM101-G Thru. CSFM105-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 1000 10 CSFM101-G~103-G CSFM104-G O Ι F , Forward Current (A) I R , Reverse Current (μA) T J =125 C 100 T J =75 OC 10 1 O T J =25 C 1 CSFM105-G 0.1 0.01 T J =25 OC Pulse width 300μS 4% duty cycle 0.1 0.001 0 20 40 60 80 100 120 0 140 0.4 0.8 1.2 2.0 1.6 V F , Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.3 Junction Capacitance Fig.4 Current Derating Curve 14 1.4 12 I O , Average Forward Current (A) C J , Junction Capacitance (pF) O T J =25 C f=1MHz Vsig=50mVp-p 10 8 6 4 2 0 0.1 1 10 1.2 1.0 0.8 0.6 0.4 0.2 0 20 100 I FSM , Peak Forward Surge Current (A) Fig.5 Non-repetitive Forward Surge Current 30 40 60 80 100 120 140 160 T A , Ambient Temperature ( OC) V R , Reverse Voltage (V) Fig.6 Test Circuit Diagram and Reverse Recovery Time Characteristics O T J =25 C 8.3ms single half sine wave, JEDEC method trr 50W NONINDUCTIVE 25 10W NONINDUCTIVE 20 ( ) (+) 25Vdc (approx.) 15 D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1W NONINDUCTIVE 10 | | | | | | | | +0.5A 0 -0.25A (+) OSCILLISCOPE (NOTE 1) -1.0A 5 NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 1cm SET TIME BASE FOR 50 / 10ns / cm 0 1 10 100 Number of Cycles at 60Hz REV:B Page 2 QW-BS005 Comchip Technology CO., LTD.