COMCHIP CSFM102-G

COMCHIP
SMD Super Fast Recovery Rectifiers
SMD Diodes Specialist
CSFM101-G Thru. CSFM105-G
Reverse Voltage: 50 to 600 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
Mini SMA
-Ideal for surface mount applications.
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.071(1.8)
0.055(1.4)
-Super fast recovery time 35nS.
-Built-in strain relief.
-Low forward voltage drop.
0.126(3.2)
0.110(2.8)
Mechanical data
0.067(1.7)
0.051(1.3)
-Case: Molded plastic, JEDEC SOD-123/Mini SMA.
-Terminals: Solderable per MIL-STD-750, method
2026.
0.035(0.9) Typ.
0.035(0.9) Typ.
-Polarity: Indicated by cathode band.
-Weight: 0.04 grams approx.
Maximum Ratings (at T A=25
Dimensions in inches and (millimeter)
O
Parameter
C unless otherwise noted)
CSFM
Symbol
101-G
CSFM
102-G
CSFM
103-G
CSFM
104-G
CSFM
105-G
Unit
Max. repetitive peak reverse voltage
V RRM
50
100
200
400
600
V
Max. DC blocking voltage
V DC
50
100
200
400
600
V
Max. RMS voltage
V RMS
35
70
140
280
420
V
Max. averaged forward current
IO
Maximum Instantaneous forward
voltage at I F =1.0A
VF
Forward surge current, 8.3ms single
half sine-wave superimposed on rated
load (JEDEC method)
1.0
0.95
A
1.25
1.70
V
I FSM
25
A
Reverse recovery time
T rr
35
nS
Reverse current at rated @T A =25 OC
O
DC blocking voltage
@ T A =100 C
IR
5.0
100
μA
R θJA
42
TJ
150
O
C
T STG
-55 to +150
O
C
Max. thermal resistance (Note 1)
Operating junction temperature
Storage temperature range
O
C/W
Note 1: Thermal resistance from junction ambient.
REV:B
Page 1
QW-BS005
Comchip Technology CO., LTD.
COMCHIP
SMD Super Fast Recovery Rectifiers
SMD Diodes Specialist
Rating and Characteristic Curves (CSFM101-G Thru. CSFM105-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
1000
10
CSFM101-G~103-G
CSFM104-G
O
Ι F , Forward Current (A)
I R , Reverse Current (μA)
T J =125 C
100
T J =75 OC
10
1
O
T J =25 C
1
CSFM105-G
0.1
0.01
T J =25 OC
Pulse width 300μS
4% duty cycle
0.1
0.001
0
20
40
60
80
100
120
0
140
0.4
0.8
1.2
2.0
1.6
V F , Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Junction Capacitance
Fig.4 Current Derating Curve
14
1.4
12
I O , Average Forward Current (A)
C J , Junction Capacitance (pF)
O
T J =25 C
f=1MHz
Vsig=50mVp-p
10
8
6
4
2
0
0.1
1
10
1.2
1.0
0.8
0.6
0.4
0.2
0
20
100
I FSM , Peak Forward Surge Current (A)
Fig.5 Non-repetitive Forward
Surge Current
30
40
60
80
100
120
140
160
T A , Ambient Temperature ( OC)
V R , Reverse Voltage (V)
Fig.6 Test Circuit Diagram and Reverse Recovery Time Characteristics
O
T J =25 C
8.3ms single half sine
wave, JEDEC method
trr
50W
NONINDUCTIVE
25
10W
NONINDUCTIVE
20
( )
(+)
25Vdc
(approx.)
15
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
1W
NONINDUCTIVE
10
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
(+)
OSCILLISCOPE
(NOTE 1)
-1.0A
5
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
1
10
100
Number of Cycles at 60Hz
REV:B
Page 2
QW-BS005
Comchip Technology CO., LTD.