COMCHIP SMD Fast Reco ver y Rect ifier s SMD Diodes Specialist CFRB201-G Thru. CFRB207-G Reverse Voltage: 50 to 1000 Volts Forward Current: 2.0 Amp RoHS Device Features DO-214AA (SMB) -Ideal for surface mount applications. -Easy pick and place. 0.185(4.70) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.155(3.94) 0.130(3.30) 0.083(2.11) 0.075(1.91) -Fast recovery time: 150~500nS. -Low leakage current. Mechanical data 0.220(5.59) 0.200(5.08) -Case: JEDEC DO-214AA, molded plastic. 0.012(0.31) 0.006(0.15) 0.096(2.44) 0.083(2.13) -Terminals: solderable per MIL-STD-750, method 2026. 0.008(0.20) 0.004(0.10) 0.050(1.27) 0.030(0.76) -Polarity: Color band denotes cathode end. -Approx. weight: 0.093 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Symbol CFRB 201-G CFRB 202-G CFRB 203-G CFRB 204-G CFRB 205-G CFRB 206-G CFRB 207-G Units Max. repetitive peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Max. DC blocking voltage V DC 50 100 200 400 600 800 1000 V Max. RMS voltage V RMS 35 70 140 280 420 560 700 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) I FSM 50 A Max. average forward current IO 2.0 A Max. instantaneous forward voltage at 2.0A VF 1.3 V Reverse recovery time T rr Max. DC reverse current at T A =25 OC rated DC blocking voltage T A =125 OC IR 5.0 50 RθJL 20 TJ 150 O C T STG -55 to +150 O C Parameter Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature 150 250 500 nS μA O C/W Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm 2 square (0.13mm thick) land area. REV:A Page 1 QW-BF003 Comchip Technology CO., LTD. COMCHIP SMD Fast Reco ver y Rect ifier s SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CFRB201-G thru CFRB207-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 100 100 T J =125 OC F o r w a rd C u rren t (A) Rever s e C urr e n t (μA ) 1000 10 10 1 0.1 1 T J =25 OC Pulse width 300μS 4% duty cycle O T J =25 C 0.1 0.01 0 30 60 90 120 0 150 Fig.3 Junction Capacitance 0.8 1.6 1.2 2.0 Fig.4 Non-repetitive Forward Surge Current 140 60 Peak Forward Surge Current ( A) T J =25 OC f=1MHz Vsig=50mVp-p 120 J u n c ti o n C apaci t ance (p F ) 0.4 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) 100 80 60 40 20 O T J =25 C 8.3ms single half sine wave, JEDEC method 50 40 30 20 10 0 0 0.1 1 10 100 1000 1 10 100 Number of Cycles at 60Hz Reverse Voltage (V) Fig.6 Current Derating Curve Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 2.8 trr 10Ω NONINDUCTIVE Average Forward Current (A) 50Ω NONINDUCTIVE +0.5A (+) 25Vdc (approx.) (-) (-) D.U.T. 1Ω NONINDUCTIVE PULSE GENERATOR (NOTE 2) 0 -0.25A (+) OSCILLLISCOPE (NOTE 1) NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF. 2. Rise time=10ns max., input impedance=50Ω. -1.0A 2.4 2.0 1.6 1.2 Single phase Half wave 60Hz 0.8 0.4 0 0 1cm Set time base for 50 / 10nS / cm 25 50 75 100 125 150 175 Ambient Temperature ( OC) REV:A Page 2 QW-BF003 Comchip Technology CO., LTD.