Cree® TR5050™ LEDs CxxxTR5050-Sxx000 Data Sheet Cree’s TR5050 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The TR5050 LEDs are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The design is optimally suited for industrystandard top-view packages. FEATURES APPLICATIONS • • Rectangular LED RF Performance – 450 nm – 180 mW min Large LCD Backlighting – Television • Adhesive Die Attach • General Illumination • Low Forward Voltage – 3.3 V Typical at 120 mA • Medium LCD Backlighting • Maximum DC Forward Current - 180 mA – Portable PCs • Class 2 ESD Rating – Monitors • InGaN Junction on Thermally Conductive SiC • LED Video Displays Substrate • White LEDs CxxxTR5050-Sxx000 Chip Diagram .A CPR3ER Rev Data Sheet: Top View Die Cross Section Bottom View TR5050 LED 500 x 500 μm Cathode (-) 98-μm diameter Anode (+) 90-μm diameter Bottom Surface 327 x 327 μm t = 175 μm Subject to change without notice. www.cree.com 1 Maximum Ratings at TA = 25°C Notes 1&3 DC Forward Current CxxxTR5050-Sxx000 180 mA Note 4 Peak Forward Current (1/10 duty cycle @ 1 kHz) 230 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions Electrostatic Discharge Threshold (HBM) ≤30°C / ≤85% RH 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450TR5050-Sxx000 2.7 3.3 3.5 2 20 C460TR5050-Sxx000 2.7 3.3 3.5 2 21 Mechanical Specifications CxxxTR5050-Sxx000 Description Dimension Tolerance P-N Junction Area (μm) 426 x 443 ±35 Chip Area (μm) 500 x 500 ±35 175 ±15 Chip Thickness (μm) Au Bond Pad Diameter Anode (μm) 90 ±10 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 98 ±10 327 x 327 ±35 Au Bond Pad Diamater Cathode (μm) Bottom Area (μm) Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using lamps in chip-on-MCPCB (metal core PCB) packages for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 120 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics measured in an integrating sphere using Illuminance E. 4. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. Maximum Forward Current (mA) 200 180 160 140 120 Rth j-a = 20 Rth j-a = 40 Rth j-a = 60 Rth j-a = 80 100 80 60 °C/W °C/W °C/W °C/W 40 20 0 50 75 100 125 150 175 Ambient Temperature (˚C) Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5050 are trademarks of Cree, Inc. 2 CPR3ER Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Standard Bins for CxxxTR5050-Sxx000 Radiant Flux (mW) LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxTR5050-Sxxxx) orders may be filled with any or all bins (CxxxTR5050-xxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 120 mA. C450TR5050-S18000 220.0 200.0 180.0 445 C450TR5050-0213 C450TR5050-0214 C450TR5050-0215 C450TR5050-0216 C450TR5050-0209 C450TR5050-0210 C450TR5050-0211 C450TR5050-0212 C450TR5050-0205 C450TR5050-0206 C450TR5050-0207 C450TR5050-0208 447.5 450 452.5 455 Dominant Wavelength (nm) Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp. Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5050 are trademarks of Cree, Inc. 3 CPR3ER Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Characteristic Curves These are representative measurements for the TR5050 LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Dominant Wavelength Shift Vs Junction Temperature Forward Current vs. Forward Voltage Dominant Wavelength Shift (nm) Dominant Wavelength Shift (nm) 180 160 If (mA) 140 120 100 80 60 40 20 5 4 2 3 1 2 1 0 0 -1 -2 -1 -2 25 0 0 0.5 1 1.5 2 2.5 3 Wavelength Shift vs. Forward Current 6 3 3.5 4 50 -3 0 Vf (V) 20 40 75 100 Junction Temperature (°C) 60 80 100 120 125 140 150 160 180 If (mA) Forward Current vs. Forward Voltage 0.000 150 150% -0.050 125 125% -0.100 Voltage Shift (V) Relative Light If Intensity (mA) Voltage Shift Vs Junction Temperature Relative Intensity vs. Forward Current 200 175% 175 100 100% 75 75% 50 50% 25 -0.150 -0.200 -0.250 -0.300 0 25% -0.350 0 0.5 1 1.5 2 2.5 3 3.5 4 -0.400 0% 0 20 40 80Vf 60 (V) 100 120 140 160 25 180 50 Relative Light Intensity Vs Junction Temperature Wavelength Shift vs. Forward Current Dominant Wavelength Shift (nm) Dominant Wavelength (nm) Relative Light Shift Intensity 2 90% 1 85% 0 80% -1 75% -2 70% 0 50 20 40 75 60 100 80 100 150 6 95% 25 125 Dominant Wavelength Shift Vs Junction Temperature 3 -3 100 Junction Temperature (°C) If (mA) 100% 75 125 120 Junction Temperature (°C) 140 4 3 2 1 0 -1 -2 150 160 5 25 180 50 75 100 125 150 Junction Temperature (°C) If (mA) Cree, Inc. Voltage Shift Vs Junction Temperature 4600 Silicon Drive Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree 0.000 and the Cree logo are registered trademarks, and TR and TR5050 are trademarks of Cree, Inc. -0.050 CPR3ER Rev. A V) 4 -0.100 Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Radiation Pattern– TR500 Far Fields This is a representative radiation pattern for the TR5050 LED product. Actual patterns will vary slightly for each chip. Copyright © 2010, Cree, Inc. (Confidential) pg. 2 Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5050 are trademarks of Cree, Inc. 5 CPR3ER Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips