Cree® Direct Attach™ DA2432™ LEDs CxxxDA2432-Sxxx00-2 Data Sheet Cree’s Direct Attach™ DA2432™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the LCD backlighting and general-illumination markets. The DA2432 LEDs are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpaddown design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance from improved thermal management. The design is optimally suited for industry-standard top-view packages. FEATURES APPLICATIONS • Rectangular LED RF Performance • General Illumination – 450 & 460 nm – 33 mW min – White LEDs – 470 nm – 30 mW min – Chip-on-Board (COB) • High Reliability - Eutectic Attach – Multi-chip Arrays • Low Forward Voltage (Vf) – 3.1 V Typical at 20 mA – High Voltage Arrays • Maximum DC Forward Current – 100 mA • 1000-V ESD Threshold Rating • InGaN Junction-Down Design • for Improved Thermal Management • Direct Attach - No wire bonding • Excellent Performance over Temperature • LCD Backlighting – Television – Monitors – Portable PCs & Tablets LED Video Displays CxxxDA2432-Sxxx00-2 Chip Diagram Anode (+) 170 x 60 µm A CPR3FM Rev Data Sheet: 240 x 320 µm Gap 60 µm Thickness 140 µm Top View Cathode (-) 145 x 105 µm Side View Subject to change without notice. www.cree.com Bottom View 1 Maximum Ratings at TA = 25°C Notes 1,3, & 4 CxxxDA2432-Sxxx00-2 DC Forward Current 100 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 150 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions Electrostatic Discharge Threshold (HBM) ≤30°C / ≤85% RH 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Part Number Note 3 Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450DA2432-Sxxx00-2 2.8 3.1 3.4 2 20 C460DA2432-Sxxx00-2 2.8 3.1 3.4 2 21 C470DA2432-Sxxx00-2 2.8 3.1 3.4 2 21 Mechanical Specifications CxxxDA2432-Sxxx00-2 Description Dimension Tolerance P-N Junction Area (μm) 210 x 280 ±35 Chip Bottom Area (μm) 240 x 320 ±35 Chip Top Area (μm) 110 x 190 ±35 Chip Thickness (μm) 140 ±15 Bond Pad Width – Anode (um) 60 ±15 Bond Pad Length – Anode (um) 170 ±35 Bond Pad Width – Cathode (um) 105 ±35 Bond Pad Length – Cathode (um) 145 ±35 60 ±15 3 ±0.5 Bond Pad Gap (μm) Bond Pad Thickness (μm) Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a chip sub-mount on MCPCB (with silicone encapsulation and flux eutectic die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The ESD classification of Class 2 is based on sampling testing according to MIL-STD-883E. 4. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 50 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements are based on a thru-hole package (with Hysol OS4000 encapsulant and flux eutectic die attach). Optical characteristics are measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. Maximum Operating Current (mA) 3. 120 100 80 60 Rth j-a = 10 °C/W Rth j-a = 20 °C/W Rth j-a = 30 °C/W Rth j-a = 40 °C/W 40 20 0 100 110 120 Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and the Cree logo are registered trademarks, and Direct Attach™ and DA2432™ are trademarks of Cree, Inc. 2 CPR3FM Rev A 130 140 150 Ambient Temperature (°C) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Standard Bins for CxxxDA2432-Sxxx00-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxDA2432-Sxxxxx-2) orders may be filled with any or all bins (CxxxDA2432-xxxxx-2) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20 mA. Radiant Flux (mW) C450DA2432-S3300-2 40 36 C450DA2432-0713-2 C450DA2432-0714-2 C450DA2432-0715-2 C450DA2432-0716-2 C450DA2432-0709-2 C450DA2432-0710-2 C450DA2432-0711-2 C450DA2432-0712-2 C450DA2432-0705-2 C450DA2432-0706-2 C450DA2432-0707-2 C450DA2432-0708-2 33 445 447.5 450 452.5 455 Radiant Flux (mW) Dominant Wavelength (nm) C460DA2432-S3300 C460DA2432-0713-2 C460DA2432-0714-2 C460DA2432-0715-2 C460DA2432-0716-2 C460DA2432-0709-2 C460DA2432-0710-2 C460DA2432-0711-2 C460DA2432-0712-2 C460DA2432-0705-2 C460DA2432-0706-2 C460DA2432-0707-2 C460DA2432-0708-2 40 36 33 455 457.5 460 462.5 465 Radiant Flux (mW) Dominant Wavelength (nm) C470DA2432-S3000-2 C470DA2432-0713-2 C470DA2432-0714-2 C470DA2432-0715-2 C470DA2432-0716-2 C470DA2432-0709-2 C470DA2432-0710-2 C470DA2432-0711-2 C470DA2432-0712-2 C470DA2432-0705-2 C470DA2432-0706-2 C470DA2432-0707-2 C470DA2432-0708-2 C470DA2432-0701-2 C470DA2432-0702-2 C470DA2432-0703-2 C470DA2432-0704-2 40 36 33 30 465 467.5 470 472.5 475 Dominant Wavelength (nm) Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and the Cree logo are registered trademarks, and Direct Attach™ and DA2432™ are trademarks of Cree, Inc. 3 CPR3FM Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Characteristic Curves These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage 125 If (mA) 100 75 50 25 0 2 3 4 5 2150 1 100 If (mA) 150 Dominant Wavelength Shift (nm) Wavelength Shift vs. vs. Forward ForwardVoltage Current Forward Current 0 50 -1 -2 0 0 0 25 1 50 Vf (V) 600% 500% 80 400% Relative Intensity Relative Light Intensity 100 125 4 150 5 Relative Intensity vs. Wavelength 100 300% 200% 60 40 20 100% 0 0 25 50 75 If (mA) 100 125 150 350 400 450 CPR3FM Rev A 500 550 600 Wavelength (nm) Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and the Cree logo are registered trademarks, and Direct Attach™ and DA2432™ are trademarks of Cree, Inc. 4 3 Vf (V) If (mA) Relative Intensity vs. Forward Current 0% 75 2 Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip. Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and the Cree logo are registered trademarks, and Direct Attach™ and DA2432™ are trademarks of Cree, Inc. 5 CPR3FM Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips