EZ1000-n

Cree® EZ1000™ Gen 2 LEDs
Data Sheet (Cathode-up)
CxxxEZ1000-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux
eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height.
Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad
range of applications such as general illumination, automotive lighting, and LCD backlighting.
FEATURES
APPLICATIONS
●
●
EZBright LED Technology
»
380 mW min. – 450 nm
»
360 mW min. – 460 nm
»
110 mW min. – 527 nm
General Illumination
»
Aircraft
»
Decorative Lighting
●
Lambertian Radiation
»
Task Lighting
●
Conductive Epoxy, Solder Paste or Preforms, or Flux
»
Outdoor Illumination
Eutectic Attach
●
Low Forward Voltage
● Dielectric Passivation across Epi Surface
●
White LEDs
●
LCD Backlighting
●
Projection Displays
●
Automotive
CxxxEZ1000-Sxx000-2 Chip Diagram
Die Cross Section
Bottom View
Top View
.B
CPR3EC Rev
Data Sheet:
EZBright LED
980 x 980 μm
Dielectric
Passivation
Cathodes (-)
150 x 150 μm
Gold Bond Pads (2)
t = 170 μm
Backside Metalization
Subject to change without notice.
www.cree.com
Anode (+)
3 μm AuSn
1
Maximum Ratings at TA = 25°C Note 1, 2 & 3
CxxxEZ1000-Sxx000-2
DC Forward Current
1000 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
1250 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
LED Chip Storage Temperature
-40°C to +120°C
Recommended Die Sheet Storage Conditions
≤30°C / ≤85% RH
Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA
Part Number
Note 2
Forward Voltage (Vf, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450EZ1000-Sxx000-2
2.9
3.2
3.8
2
20
C460EZ1000-Sxx000-2
2.9
3.2
3.8
2
21
C527EZ1000-Sxx000-2
3.0
3.4
4.0
2
35
Mechanical Specifications
CxxxEZ1000-Sxx000-2
Description
Dimensions
Tolerance
P-N Junction Area (μm)
950 x 950
± 35
Chip Area (μm)
980 x 980
± 35
170
± 25
Chip Thickness (μm)
Top Au Bond Pad (μm) - Qty. 2
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Thickness (μm)
150 x 150
± 25
3.0
± 1.5
980 x 980
± 35
3.0
± 1.5
Notes:
1.
2.
3.
Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT package without an
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree
EZBright Applications Note for assembly-process information.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an
integrating sphere using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for
the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to
optimize product performance.
Maximum Forward Current (mA)
1200
1000
800
600
Rth j-a = 10
Rth j-a = 15
Rth j-a = 20
Rth j-a = 25
400
°C/W
°C/W
°C/W
°C/W
200
0
25
50
75
100
125
150
175
Ambient Temperature (˚C)
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
2
CPR3EC Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
Standard Bins for CxxxEZ1000-Sxx000-2
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxEZ1000-Sxx000-2) orders may be filled with any or all bins (CxxxEZ1000-0xxx-2)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
Radiant Flux (mW)
C450EZ1000-S38000-2
C450EZ1000-0221-2
C450EZ1000-0222-2
C450EZ1000-0223-2
C450EZ1000-0224-2
C450EZ1000-0217-2
C450EZ1000-0218-2
C450EZ1000-0219-2
C450EZ1000-0220-2
C450EZ1000-0213-2
C450EZ1000-0214-2
C450EZ1000-0215-2
C450EZ1000-0216-2
C450EZ1000-0209-2
C450EZ1000-0210-2
C450EZ1000-0211-2
C450EZ1000-0212-2
C450EZ1000-0205-2
C450EZ1000-0206-2
C450EZ1000-0207-2
C450EZ1000-0208-2
460
440
420
400
380
445
447.5
450
452.5
455
Dominant Wavelength (nm)
Radiant Flux (mW)
C460EZ1000-S36000-2
C460EZ1000-0221-2
C460EZ1000-0222-2
C460EZ1000-0223-2
C460EZ1000-0224-2
C460EZ1000-0217-2
C460EZ1000-0218-2
C460EZ1000-0219-2
C460EZ1000-0220-2
C460EZ1000-0213-2
C460EZ1000-0214-2
C460EZ1000-0215-2
C460EZ1000-0216-2
C460EZ1000-0209-2
C460EZ1000-0210-2
C460EZ1000-0211-2
C460EZ1000-0212-2
C460EZ1000-0205-2
C460EZ1000-0206-2
C460EZ1000-0207-2
C460EZ1000-0208-2
C460EZ1000-0201-2
C460EZ1000-0202-2
C460EZ1000-0203-2
C460EZ1000-0204-2
460
440
420
400
380
360
455
457.5
460
462.5
465
Dominant Wavelength (nm)
Radiant Flux (mW)
C527EZ1000-S11000-2
C527EZ1000-0213-2
C527EZ1000-0214-2
C527EZ1000-0215-2
C527EZ1000-0210-2
C527EZ1000-0211-2
C527EZ1000-0212-2
C527EZ1000-0207-2
C527EZ1000-0208-2
C527EZ1000-0209-2
C527EZ1000-0204-2
C527EZ1000-0205-2
C527EZ1000-0206-2
C527EZ1000-0201-2
C527EZ1000-0202-2
C527EZ1000-0203-2
190
170
150
130
110
520
525
530
535
Dominant Wavelength (nm)
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
3
CPR3EC Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
If (mA)
700
600
500
400
300
200
100
Characteristic Curves
0
0
1
2
3
4
5
Vf (V)
slightly
These are representative measurements for the EZBright 1000. Actual curves will vary
for the various radiant
flux and dominant wavelength bins.
Wavelength Shift vs. Junction Temperature
6
Dominant
Wavelength
Shift (nm)
Voltage Shift
(V)
Forward Current vs. Forward Voltage
1250
If (mA)
1000
750
500
250
Voltage Shift vs. Junction Temperature
5
0.100
4
0.000
3
-0.100
2
-0.200
1
-0.300
0
-1
-0.400
-2
-0.500
25
50
-0.600
0
2
2.5
3
3.5
4
4.5
25
5
50
75
100
Junction Temperature (°C)
75
100
125
150
125
150
Junction Temperature (°C)
Vf (V)
Relative Intensity vs. Forward Current
300%
Relative Intensity vs. Junction Temperature
Relative Intensity vs. Forward Current
110%
105%
250%
200%
Relative Light Intensity
Relative
Intensity
Relative
Intensity
300%
250%
200%
150%
150%
100%
100%
50%
50%
0%
0%
100%
95%
90%
85%
80%
75%
70%
0
250
500
750
1000
1250
0
250
500
If (mA) 750
1000
1250
65%
25
50
Wavelength Shift vs. Forward Current
Dominant Wavelength Shift (nm)
Wavelength Shift vs. Forward Current
DW Shift
(nm)(nm)
DW Shift
96
63
30
-3
0
-6
-3
-9
-6
-12
-9
-12
0
250
250
500
500
125
150
750
If (mA) 750
1000
1000
Wavelength Shift vs. Junction Temperature
6
129
0
100
Junction Temperature (°C)
If (mA)
12
75
5
4
3
2
1
0
-1
-2
25
1250
50
75
100
125
150
Junction Temperature (°C)
1250
If (mA)
Relative Intensity vs. Junction Temperature
110%
4
CPR3EC Rev. B
ght Intensity
105%
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree,
Inc.
100%
95%
90%
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
5
CPR3EC Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips