Cree® EZ1000™ Gen 2 LEDs Data Sheet (Cathode-up) CxxxEZ1000-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications such as general illumination, automotive lighting, and LCD backlighting. FEATURES APPLICATIONS ● ● EZBright LED Technology » 380 mW min. – 450 nm » 360 mW min. – 460 nm » 110 mW min. – 527 nm General Illumination » Aircraft » Decorative Lighting ● Lambertian Radiation » Task Lighting ● Conductive Epoxy, Solder Paste or Preforms, or Flux » Outdoor Illumination Eutectic Attach ● Low Forward Voltage ● Dielectric Passivation across Epi Surface ● White LEDs ● LCD Backlighting ● Projection Displays ● Automotive CxxxEZ1000-Sxx000-2 Chip Diagram Die Cross Section Bottom View Top View .B CPR3EC Rev Data Sheet: EZBright LED 980 x 980 μm Dielectric Passivation Cathodes (-) 150 x 150 μm Gold Bond Pads (2) t = 170 μm Backside Metalization Subject to change without notice. www.cree.com Anode (+) 3 μm AuSn 1 Maximum Ratings at TA = 25°C Note 1, 2 & 3 CxxxEZ1000-Sxx000-2 DC Forward Current 1000 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 1250 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions ≤30°C / ≤85% RH Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Part Number Note 2 Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450EZ1000-Sxx000-2 2.9 3.2 3.8 2 20 C460EZ1000-Sxx000-2 2.9 3.2 3.8 2 21 C527EZ1000-Sxx000-2 3.0 3.4 4.0 2 35 Mechanical Specifications CxxxEZ1000-Sxx000-2 Description Dimensions Tolerance P-N Junction Area (μm) 950 x 950 ± 35 Chip Area (μm) 980 x 980 ± 35 170 ± 25 Chip Thickness (μm) Top Au Bond Pad (μm) - Qty. 2 Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) Back Contact Metal Thickness (μm) 150 x 150 ± 25 3.0 ± 1.5 980 x 980 ± 35 3.0 ± 1.5 Notes: 1. 2. 3. Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT package without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. Maximum Forward Current (mA) 1200 1000 800 600 Rth j-a = 10 Rth j-a = 15 Rth j-a = 20 Rth j-a = 25 400 °C/W °C/W °C/W °C/W 200 0 25 50 75 100 125 150 175 Ambient Temperature (˚C) Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc. 2 CPR3EC Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Standard Bins for CxxxEZ1000-Sxx000-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ1000-Sxx000-2) orders may be filled with any or all bins (CxxxEZ1000-0xxx-2) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. Radiant Flux (mW) C450EZ1000-S38000-2 C450EZ1000-0221-2 C450EZ1000-0222-2 C450EZ1000-0223-2 C450EZ1000-0224-2 C450EZ1000-0217-2 C450EZ1000-0218-2 C450EZ1000-0219-2 C450EZ1000-0220-2 C450EZ1000-0213-2 C450EZ1000-0214-2 C450EZ1000-0215-2 C450EZ1000-0216-2 C450EZ1000-0209-2 C450EZ1000-0210-2 C450EZ1000-0211-2 C450EZ1000-0212-2 C450EZ1000-0205-2 C450EZ1000-0206-2 C450EZ1000-0207-2 C450EZ1000-0208-2 460 440 420 400 380 445 447.5 450 452.5 455 Dominant Wavelength (nm) Radiant Flux (mW) C460EZ1000-S36000-2 C460EZ1000-0221-2 C460EZ1000-0222-2 C460EZ1000-0223-2 C460EZ1000-0224-2 C460EZ1000-0217-2 C460EZ1000-0218-2 C460EZ1000-0219-2 C460EZ1000-0220-2 C460EZ1000-0213-2 C460EZ1000-0214-2 C460EZ1000-0215-2 C460EZ1000-0216-2 C460EZ1000-0209-2 C460EZ1000-0210-2 C460EZ1000-0211-2 C460EZ1000-0212-2 C460EZ1000-0205-2 C460EZ1000-0206-2 C460EZ1000-0207-2 C460EZ1000-0208-2 C460EZ1000-0201-2 C460EZ1000-0202-2 C460EZ1000-0203-2 C460EZ1000-0204-2 460 440 420 400 380 360 455 457.5 460 462.5 465 Dominant Wavelength (nm) Radiant Flux (mW) C527EZ1000-S11000-2 C527EZ1000-0213-2 C527EZ1000-0214-2 C527EZ1000-0215-2 C527EZ1000-0210-2 C527EZ1000-0211-2 C527EZ1000-0212-2 C527EZ1000-0207-2 C527EZ1000-0208-2 C527EZ1000-0209-2 C527EZ1000-0204-2 C527EZ1000-0205-2 C527EZ1000-0206-2 C527EZ1000-0201-2 C527EZ1000-0202-2 C527EZ1000-0203-2 190 170 150 130 110 520 525 530 535 Dominant Wavelength (nm) Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc. 3 CPR3EC Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips If (mA) 700 600 500 400 300 200 100 Characteristic Curves 0 0 1 2 3 4 5 Vf (V) slightly These are representative measurements for the EZBright 1000. Actual curves will vary for the various radiant flux and dominant wavelength bins. Wavelength Shift vs. Junction Temperature 6 Dominant Wavelength Shift (nm) Voltage Shift (V) Forward Current vs. Forward Voltage 1250 If (mA) 1000 750 500 250 Voltage Shift vs. Junction Temperature 5 0.100 4 0.000 3 -0.100 2 -0.200 1 -0.300 0 -1 -0.400 -2 -0.500 25 50 -0.600 0 2 2.5 3 3.5 4 4.5 25 5 50 75 100 Junction Temperature (°C) 75 100 125 150 125 150 Junction Temperature (°C) Vf (V) Relative Intensity vs. Forward Current 300% Relative Intensity vs. Junction Temperature Relative Intensity vs. Forward Current 110% 105% 250% 200% Relative Light Intensity Relative Intensity Relative Intensity 300% 250% 200% 150% 150% 100% 100% 50% 50% 0% 0% 100% 95% 90% 85% 80% 75% 70% 0 250 500 750 1000 1250 0 250 500 If (mA) 750 1000 1250 65% 25 50 Wavelength Shift vs. Forward Current Dominant Wavelength Shift (nm) Wavelength Shift vs. Forward Current DW Shift (nm)(nm) DW Shift 96 63 30 -3 0 -6 -3 -9 -6 -12 -9 -12 0 250 250 500 500 125 150 750 If (mA) 750 1000 1000 Wavelength Shift vs. Junction Temperature 6 129 0 100 Junction Temperature (°C) If (mA) 12 75 5 4 3 2 1 0 -1 -2 25 1250 50 75 100 125 150 Junction Temperature (°C) 1250 If (mA) Relative Intensity vs. Junction Temperature 110% 4 CPR3EC Rev. B ght Intensity 105% Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc. 100% 95% 90% Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc. 5 CPR3EC Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips