Cree® TR5270™ LEDs CxxxTR5270-Sxx00 (175-μm) CxxxTR5270-Sxx00-3 (250-μm) Data Sheet Cree’s TR5270 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The TR5270 LEDs are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The TR5270 is available in two chip thicknesses: 175 µm and 250 µm. The 250-µm-thick version offers 5% improvement brightness over the 175-µm version due the increased bevel area. The design is optimally suited for industry-standard top-view packages. FEATURES APPLICATIONS • • Rectangular LED RF Performance – 450 nm – 200 mW min – 460 nm – 180 mW min Large LCD Backlighting – Television • General Illumination • Medium LCD Backlighting • Adhesive Die Attach • Low Forward Voltage – 3.2 V Typical at 120 mA – Portable PCs • Maximum DC Forward Current - 250 mA – Monitors • Class 2 ESD Rating • LED Video Displays • InGaN Junction on Thermally Conductive SiC • White LEDs Substrate CxxxTR5270-Sxx00 (175-µm) Chip Diagram .A CPR3ET Rev Data Sheet: Top View Die Cross Section Cathode (-) 98-μm diameter TR5270 LED 520 x 700 μm Anode (+) 90-μm diameter Bottom Surface 347 x 527 μm Bottom View t = 175 μm Subject to change without notice. www.cree.com 1 CxxxTR5270-Sxx00-3 (250-µm) Chip Diagram Top View Die Cross Section Bottom View Cathode (-) 98-μm diameter TR5270 LED 520 x 700 μm Anode (+) 90-μm diameter Bottom Surface 260 x 440 μm t = 250 μm Mechanical Specifications Description CxxxTR5270-Sxx00 (175-µm) Dimension Tolerance P-N Junction Area (μm) 450 x 640 ±35 Chip Area (μm) 520 x 700 ±35 175 ±15 Chip Thickness (μm) Au Bond Pad Diameter Anode (μm) 90 ±10 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 98 ±10 347 x 527 ±35 Au Bond Pad Diameter Cathode (μm) Bottom Area (μm) Mechanical Specifications CxxxTR5270-Sxx00-3 (250-µm) Description Dimension Tolerance P-N Junction Area (μm) 450 x 640 ±35 Chip Area (μm) 520 x 700 ±35 250 ±15 Chip Thickness (μm) Au Bond Pad Diameter Anode (μm) 90 ±10 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 98 ±10 260 x 440 ±45 Au Bond Pad Diameter Cathode (μm) Bottom Area (μm) Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc. 2 CPR3ET Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Maximum Ratings at TA = 25°C Notes 1, 3 & 4 CxxxTR5270-Sxx00 and CxxxTR5270-Sxx00-3 DC Forward Current 250 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 300 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions Electrostatic Discharge Threshold (HBM) ≤30°C / ≤85% RH 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA Part Number Forward Voltage (Vf, V) C450TR5270-Sxx000 C460TR5270-Sxx000 C450TR5270-Sxx000-3 C460TR5270-Sxx000-3 Notes: 1. 2. 3. 4. Min. Typ. Max If (mA) 2.7 3.2 Max Vf @Max If (V) 2.7 3.2 Max 2.7 Tj (Deg C) 3.2 Max Power (W) 2.7 3.2 Thermal Resistance (C/W) Max. 250 3.5 3.5 3.5 150 3.5 0.875 3.5 Note 3 Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Max. Typ. 2 20 2 21 2 20 2 21 10 20 30 Maximum ratings are package-dependent. The above ratings were determined using lamps in chip-on-MCPCB (metal core PCB) packages for characterization. Ratings Iffor@ other packages may differ. Junction should be characterized in a specific package Rthtemperature (j-A) = Tamb Tamb Tambto determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 250 discharge (ESD) according to the 25HBM is measured by simulating 25 ESD using a rapid avalanche 25 Product resistance to electrostatic energy test (RAET). The RAET procedures are designed ESD ratings shown. 250 to approximate the maximum 141.25 132.5 123.75 All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 120 0 shown above. Efficiency decreases 150at higher currents. Typical 150values given are within 150 mA within the maximum ratings the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. Maximum Forward Current (mA) 300 250 200 150 Rth j-a = 10 Rth j-a = 20 Rth j-a = 30 Rth j-a = 40 100 50 C/W C/W C/W C/W 0 50 75 100 125 150 175 Ambient Temperature (C) Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc. 3 CPR3ET Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Standard Bins for CxxxTR5270-Sxx00 Radiant Flux (mW) Radiant Flux (mW) Radiant Flux (mW) Radiant Flux (mW) LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxTR5270-Sxxxx or CxxxTR5270-Sxxxx-3 ) orders may be filled with any or all bins (CxxxTR5270-xxxx or CXXXTR5270-xxxx-3) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 120 mA. C450TR5270-S20000 (175-µm thick) C450TR5270-0209 C450TR5270-0210 C450TR5270-0211 C450TR5270-0212 C450TR5270-0205 C450TR5270-0206 C450TR5270-0207 C450TR5270-0208 220 200 445 447.5 450 Dominant Wavelength (nm) 452.5 455 C460TR5270-S18000 (175-µm thick) C460TR5270-0205 C460TR5270-0206 C460TR5270-0207 C460TR5270-0208 C460TR5270-0201 C460TR5270-0202 C460TR5270-0203 C460TR5270-0204 200 180 455 457.5 460 462.5 465 Dominant Wavelength (nm) C450TR5270-S21000-3 (250-µm thick) C450TR5270-0309-3 C450TR5270-0310-3 C450TR5270-0311-3 C450TR5270-0312-3 C450TR5270-0305-3 C450TR5270-0306-3 C450TR5270-0307-3 C450TR5270-0308-3 230 210 445 447.5 450 452.5 455 Dominant Wavelength (nm) C460TR5270-S19000-3 (250-µm thick) C460TR5270-0305-3 C460TR5270-0306-3 C460TR5270-0307-3 C460TR5270-0308-3 C460TR5270-0301-3 C460TR5270-0302-3 C460TR5270-0303-3 C460TR5270-0304-3 210 190 455 457.5 460 462.5 465 Dominant Wavelength (nm) Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp. Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc. 4 CPR3ET Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Characteristic Curves These are representative measurements for the TR5270 LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Relative Intensity vs. Forward Current Relative Light Intensity Vs Junction Temperature 200% 100% Relative Light Intensity Relative Light Intensity 175% 150% 125% 100% 75% 50% 25% 0% 95% 90% 85% 80% 75% 70% 0 62.5 125 187.5 250 25 50 If (mA) 2 1 0 -1 -2 -3 62.5 125 150 187.5 5 4 3 2 1 0 -1 -2 25 250 50 75 100 125 150 Junction Temperature (°C) Forward Current vs. Forward Voltage Voltage Shift Vs Junction Temperature 200 0 175 -0.050 150 -0.100 Voltage Shift (V) If (mA) 125 6 If (mA) 125 100 75 50 25 -0.150 -0.200 -0.250 -0.300 -0.350 0 -0.400 0 1 2 Vf (V) 3 4 25 50 75 CPR3ET Rev. A 100 125 150 Junction Temperature (°C) Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc. 5 100 Dominant Wavelength Shift Vs Junction Temperature Dominant Wavelength Shift (nm) Dominant Wavelength Shift (nm) Wavelength Shift vs. Forward Current 3 0 75 Junction Temperature (°C) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Radiation Pattern Far Fields – TR430 This is a representative radiation pattern for the TR5270 (175-µm) LED product. Actual patterns will vary slightly for each chip. This is a representative radiation pattern for the TR5270 (250-µm) LED product. Actual patterns will vary slightly for each chip. Copyright © 2010, Cree, Inc. (Confidential) pg. 1 Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc. 6 CPR3ET Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips