Cree® TR3547M™ LEDs CxxxTR3547M-Sxx00 Data Sheet Cree’s TR3547M LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The TR3547M LEDs are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The metal backside allows for eutectic die attach and enables superior performance from improved thermal management. The design is optimally suited for industry-standard top-view packages. FEATURES • Large LCD Backlighting – • • Television Rectangular LED RF Performance • General Illumination – • Medium LCD Backlighting 450 & 460 nm - 76 mW min High Reliability - Eutectic, Solder Paste or Preforms – Portable PCs Attach – Monitors • Low Forward Voltage - 3.2 Vf Typical at 50 mA • LED Video Displays • Maximum DC Forward Current – 150 mA • White LEDs • 1000-V ESD Threshold Rating • InGaN Junction on Thermally Conductive SiC Substrate APPLICATIONS CxxxTR3547M-Sxx00 Chip Diagram Bottom View A CPR3FL Rev. Data Sheet: Top View Die Cross Section Cathode (-) 98 μm Bottom Surface 200 x 320 μm TR3547M LED 350 x 470 μm Metal Backside 160 x 280 μm Anode (+) 90 μm diameter Subject to change without notice. www.cree.com t = 155 μm 1 Maximum Ratings at TA = 25°C Notes 1&3 CxxxTR3547M-Sxx00 DC Forward Current 150 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 200 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions Electrostatic Discharge Threshold (HBM) ≤30°C / ≤85% RH 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 50 mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450TR3547M-Sxx00 2.8 3.2 3.5 2 20 C460TR3547M-Sxx00 2.8 3.2 3.5 2 21 Mechanical Specifications Description CxxxTR3547M-Sxx00 Dimension Tolerance P-N Junction Area (μm) 310 x 430 ±35 Chip Area (μm) 350 x 470 ±35 Chip Thickness (μm) 155 ±15 Au Bond Pad Diameter Anode (μm) 90 -5, +15 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 Au Bond Pad Area Cathode (μm) 98 x 98 -5, +15 Bottom Area (μm) 200 x 320 ±35 Bottom Contact Metal (μm) 160 x 280 ±25 3.0 ±1.0 Bottom Contact Metal Thickness (μm) Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a Cree SMT package (with silicone encapsulation and intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 50 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere using Illuminance E. Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR3470M are trademarks of Cree, Inc. 2 CPR3FL Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Standard Bins for CxxxTR3547M-Sxx00 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxTR3547M-Sxxxx) orders may be filled with any or all bins (CxxxTR3547M-xxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 50 mA. Radiant Flux (mW) C450TR3547M-S7600 C450TR3547M-0217 C450TR3547M-0218 C450TR3547M-0219 C450TR3547M-0220 C450TR3547M-0213 C450TR3547M-0214 C450TR3547M-0215 C450TR3547M-0216 C450TR3547M-0209 C450TR3547M-0210 C450TR3547M-0211 C450TR3547M-0212 C450TR3547M-0205 C450TR3547M-0206 C450TR3547M-0207 C450TR3547M-0208 94 88 82 76 445 447.5 450 Dominant Wavelength (nm) 452.5 455 Radiant Flux (mW) C460TR3547M-S7600 C460TR3547M-0217 C460TR3547M-0218 C460TR3547M-0219 C460TR3547M-0220 C460TR3547M-0213 C460TR3547M-0214 C460TR3547M-0215 C460TR3547M-0216 C460TR3547M-0209 C460TR3547M-0210 C460TR3547M-0211 C460TR3547M-0212 C460TR3547M-0205 C460TR3547M-0206 C460TR3547M-0207 C460TR3547M-0208 94 88 82 76 455 457.5 460 462.5 465 Dominant Wavelength (nm) Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR3470M are trademarks of Cree, Inc. 3 CPR3FL Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Characteristic Curves These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR3470M are trademarks of Cree, Inc. 4 CPR3FL Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the TR LED product. Actual patterns will vary slightly for each chip. Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR3470M are trademarks of Cree, Inc. 5 CPR3FL Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips