430CB230

SuperBlue™ Generation II LEDs
Preliminary Data Sheet
C430CB230-S2100
Cree’s low-current SuperBlue Generation II LEDs combine highly efficient GaN with Cree’s proprietary G•SiC®
substrate to deliver the ultimate price/performance for blue LEDs. The C430CB230-S2100 is designed for automotive
applications or any application where wavelength stability and chip robustness are critical.
FEATURES
•
Low Wavelength Variation
––
•
APPLICATIONS
•
461-465 nm at 10 mA
Automotive Applications
––
Dashboard Lighting
High Performance
––
Interior Lighting
––
––
Toggle Switch Lighting
0.85 mW (463 nm)
•
Superior SiC Substrate Technology
•
Electronic Signs and Displays
•
Excellent Chip-to-Chip Consistency
•
Indicator Lights
•
High Reliability
•
Single Wire Bond Structure
•
Class 2 ESD Rating
C430CB230-S2100 Chip Diagram
Top View
Bottom View
Die Cross Section
.CPR3DM Rev
Data Sheet:
Anode (+)
200 x 200 μm
SiC Substrate
t = 250 μm
Mesa (junction)
180 x 180 μm
Gold Bond Pad
114 μm Diameter
Subject to change without notice.
www.cree.com
Backside
Metallization
Cathode (-)
1
Maximum Ratings at TA = 25°C Notes 1&3
C430CB230-S2100
DC Forward Current
15 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
35 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM)
1000 V
Electrostatic Discharge Classification (MIL-STD-883E)Note 2
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 10 mA
Forward
Voltage
(Vf, V)
Part Number
C430CB230-S2100
Radiant Flux
(P, mW)
Note 3
Reverse
Current
[I(Vr=5V), μA]
Peak
Wavelength
(λd, nm)
Dominant
Wavelength
(λd, nm)
Full Width
Half Max
(λD, nm)
Typ.
Max.
Min.
Typ.
Max.
Typ.
Min.
Typ.
Max.
Typ.
4.0
4.5
0.425
0.80
10
423
461
463
465
59
Mechanical Specifications
Description
C430CB230-S0100
Dimension
Tolerance
P-N Junction Area (μm 2)
180 x 180
± 35
Top Area (μm 2)
200 x 200
± 35
Bottom Area (μm )
200 x 200
± 35
Chip Thickness (μm)
250
± 25
Au Bond Pad Diameter (μm)
114
± 20
Au Bond Pad Thickness (μm)
1.1
± 0.5
Back Contact Metal Diameter (μm)
114
± 20
2
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (<5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The ESD classification
of Class II is based on sample testing according to MIL-STD-883E.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled
and operated at 10 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance A.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
2
CPR3DM Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Shift (n
0.00
-0.50
Characteristic Curves
-1.00
0
5
10
15
20
25
If (mA)
These are representative measurements for the CB230 LED product. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Wavelength Shift vs Forward Current
Forward Current vs Forward Voltage
25.0
1.00
22.5
20.0
0.50
15.0
Shift (nm)
If (mA)
17.5
12.5
10.0
7.5
0.00
-0.50
5.0
2.5
-1.00
0.0
0.0
1.0
2.0
3.0
4.0
0
5.0
5
10
15
20
25
If (mA)
Vf (V)
Forward Current vs Forward Voltage
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
25.0
22.5
20.0
17.5
If (mA)
% Relative Intensity
Relative Intensity vs Forward Voltage
15.0
12.5
10.0
7.5
5.0
0
5
10
15
If (mA)
20
25
2.5
0.0
0.0
1.0
2.0
3.0
4.0
5.0
Vf (V)
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
3
CPR3DM Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Radiation Pattern
This is a representative radiation pattern for the CB230 LED product. Actual patterns will vary slightly for each chip.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
4
CPR3DM Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips