430CB290

SuperBlue™ Generation II LEDs
Preliminary Data Sheet
C430CB290-S2100
Cree’s SuperBlue LEDs combine highly efficient GaN with Cree’s proprietary G•SiC® substrate to deliver the ultimate
price/performance for high-intensity blue LEDs. The C430CB290-S2100 is designed for automotive applications or
any application where wavelength stability and chip robustness are critical.
FEATURES
•
APPLICATIONS
Low Wavelength Variation
––
•
461-465 nm at 20 mA
Automotive Applications
––
Dashboard Lighting
•
High Performance – 1.3 mW
––
Interior Lighting
•
Superior SiC Substrate Technology
––
Toggle Switch Lighting
•
Excellent Chip-to-Chip Consistency
•
Electronic Signs and Displays
•
High Reliability
•
Indicator Lights
•
Single Wire Bond Structure
•
Class 2 ESD Rating
C430CB290-S2100 Chip Diagram
Top View
Bottom View
.CPR3DN Rev
Data Sheet:
260 x 260 μm
Mesa (junction)
240 x 240 μm
Die Cross Section
Anode (+)
SiC Substrate
t = 250 μm
Backside
Metallization
Gold Bond Pad
114 μm Diameter
Cathode (-)
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°C Notes 1&3
C430CB290-S2100
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
70 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM)
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Forward
Voltage
(Vf, V)
Part Number
C430CB290-S2100
Radiant Flux
(P, mW)
Note 3
Reverse
Current
[I(Vr=5V), μA]
Peak
Wavelength
(λd, nm)
Dominant
Wavelength
(λd, nm)
Full Width
Half Max
(λD, nm)
Typ.
Max.
Min.
Typ.
Max.
Typ.
Min.
Typ.
Max.
Typ.
4.0
4.5
0.85
1.3
10
423
461
463
465
59
Mechanical Specifications
Description
C430CB290-S2100
Dimension
Tolerance
P-N Junction Area (μm2)
240 x 240
± 35
Top Area (μm2)
260 x 260
± 35
Bottom Area (μm )
260 x 260
± 35
Chip Thickness (μm)
250
± 25
Au Bond Pad Diameter (μm)
114
± 20
Au Bond Pad Thickness (μm)
1.1
± 0.5
Back Contact Metal Diameter (μm)
114
± 20
2
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (<5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The ESD classification
of Class 2 is based on sample testing according to MIL-STD-883E.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance A.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
2
CPR3DN Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Characteristic Curves
Characteristic Curves
These are
representative
measurements
LED product.
product. Actual
curves
slightly
These
are representative
measurementsfor
forthe
the CB290
CB290 LED
Actual
curves
will will
vary vary
slightly
for for the various
radiant flux
and
dominant
wavelength
bins.
the various radiant flux and dominant wavelength bins.
Forward Current vs Forward Voltage
30
2.5
2.0
20
1.5
If (mA)
Shift (nm)
25
Dominant Wavelength Shift vs Forward Current
15
1.0
10
0.5
5
0.0
0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
Vf (V)
3.0
3.5
4.0
4.5
5.0
0
5
10
15
If (mA)
20
25
30
Relative Intensity vs Forward Voltage
160
% Relative Intensity
140
120
100
80
60
40
20
0
0
5
10
15
If (mA)
20
25
30
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
3
CPR3DN Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Radiation Pattern
This is a representative radiation pattern for the CB290 LED product. Actual patterns will vary slightly for each chip.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
4
CPR3DN Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips