MegaBright® Generation II LEDs CxxxMB290-Sxx00 Cree’s MB™ Generation II series of MegaBright LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced vertical chip structure to maximize light extraction efficiency and require only a single wire bond connection. Sorted die kits provide die sheets conveniently sorted into wavelength and radiant flux bins. Cree’s MB series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive lighting and white LEDs, yet can also be used in high-volume applications such as LCD backlighting. Cree’s MB series chips are compatible with most radial and SMT LED assembly processes. FEATURES • APPLICATIONS MegaBright LED Performance • White LEDs – • LCD Backlighting Units 460 & 470nm MB-8 – 8.0 mW min. • Outdoor LED Video Displays MB-10 - 10.0 mW min. • Automotive Dashboard Lighting MB-12 - 12.0 mW min. • Traffic Signals MB-14 - 14.0 mW min. MB-16 - 16.0 mW min (460 nm) – 505 nm - 6.0 mW min. – 527 nm - 5.0 mW min. • Single Wire Bond Structure • Class 2 ESD Rating CxxxMB290-Sxx00 Chip Diagram R3CK, Rev. C Datasheet: CP Top View Bottom View G•SiC LED Chip 300 x 300 μm Mesa (junction) 250 x 250 μm Gold Bond Pad 112 μm Diameter Die Cross Section InGaN Anode (+) SiC Substrate h = 250 μm Backside Metallization Cathode (-) Subject to change without notice. www.cree.com Maximum Ratings at TA = 25°C Notes 1&3 CxxxMB290-Sxx00 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM) 1000 V Electrostatic Discharge Classification (MIL-STD-883E)Note 2 Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5V), μA] Full Width Half Max. (λD, nm) Min. Typ. Max. Max. Typ. C460MB290-Sxx00 2.9 3.3 3.7 2 21 C470MB290-Sxx00 2.9 3.3 3.7 2 22 C505MB290-S0600 2.9 3.3 3.9 2 30 C527MB290-S0500 2.9 3.3 3.9 2 35 Mechanical Specifications Description CxxxMB290-Sxx00 Dimension Tolerance P-N Junction Area (μm) 250 x 250 ± 25 Top Area (μm) 300 x 300 ± 25 Bottom Area (μm) 200 x 200 ± 25 Chip Thickness (μm) 250 ± 25 Au Bond Pad Diameter (μm) 112 ± 20 Au Bond Pad Thickness (μm) 1.2 ± 0.5 Backside Metal Diameter (μm) 104 ± 20 Notes: 1. 2. 3. 4. 5. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E. Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80 μm. Specifications are subject to change without notice. Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. CPR3CK Rev. C Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxMB290-Sxx00 LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxMB290-Sxx00) orders may be filled with any or all bins (CxxxMB290-02xx) contained in the kit. Radiant Flux MB-16 C460MB290-S1600 18.0 mW C460MB290-0221 C460MB290-0222 C460MB290-0223 C460MB290-0224 C460MB290-0217 C460MB290-0218 C460MB290-0219 C460MB290-0220 16.0 mW 455 nm 457.5 nm Radiant Flux MB-14 462.5 nm 18.0 mW 16.0 mW C460MB290-0221 C460MB290-0222 C460MB290-0223 C460MB290-0224 C460MB290-0217 C460MB290-0218 C460MB290-0219 C460MB290-0220 C460MB290-0213 C460MB290-0214 C460MB290-0215 C460MB290-0216 14.0 mW 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm 465 nm C460MB290-S1200 C460MB290-0221 C460MB290-0222 C460MB290-0223 C460MB290-0224 C460MB290-0217 C460MB290-0218 C460MB290-0219 C460MB290-0220 C460MB290-0213 C460MB290-0214 C460MB290-0215 C460MB290-0216 C460MB290-0209 C460MB290-0210 C460MB290-0211 C460MB290-0212 18.0 mW 16.0 mW 14.0 mW 12.0 mW 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. 465 nm C460MB290-S1400 MB-12 Radiant Flux 460 nm Dominant Wavelength CPR3CK Rev. C 465 nm Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxMB290-Sxx00 (continued) Radiant Flux MB-10 C460MB290-S1000 18.0 mW 16.0 mW 14.0 mW 12.0 mW C460MB290-0221 C460MB290-0222 C460MB290-0223 C460MB290-0224 C460MB290-0217 C460MB290-0218 C460MB290-0219 C460MB290-0220 C460MB290-0213 C460MB290-0214 C460MB290-0215 C460MB290-0216 C460MB290-0209 C460MB290-0210 C460MB290-0211 C460MB290-0212 C460MB290-0205 C460MB290-0206 C460MB290-0207 C460MB290-0208 10.0 mW 455 nm 457.5 nm MB-8 460 nm Dominant Wavelength 462.5 nm 465 nm C460MB290-S0800 C460MB290-0221 C460MB290-0222 C460MB290-0223 C460MB290-0224 C460MB290-0217 C460MB290-0218 C460MB290-0219 C460MB290-0220 C460MB290-0213 C460MB290-0214 C460MB290-0215 C460MB290-0216 C460MB290-0209 C460MB290-0210 C460MB290-0211 C460MB290-0212 C460MB290-0205 C460MB290-0206 C460MB290-0207 C460MB290-0208 C460MB290-0201 C460MB290-0202 C460MB290-0203 C460MB290-0204 Radiant Flux 18.0 mW 16.0 mW 14.0 mW 12.0 mW 10.0 mW 8.0 mW 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. CPR3CK Rev. C 465 nm Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxMB290-Sxx00 (continued) Radiant Flux MB-14 C470MB290-S1400 16.0 mW C470MB290-0217 C470MB290-0218 C470MB290-0219 C470MB290-0220 C470MB290-0213 C470MB290-0214 C470MB290-0215 C470MB290-0216 14.0 mW 465 nm 467.5 nm Radiant Flux MB-12 Radiant Flux 472.5 nm 16.0 mW 14.0 mW C470MB290-0217 C470MB290-0218 C470MB290-0219 C470MB290-0220 C470MB290-0213 C470MB290-0214 C470MB290-0215 C470MB290-0216 C470MB290-0209 C470MB290-0210 C470MB290-0211 C470MB290-0212 12.0 mW 465 nm 467.5 nm 470 nm Dominant Wavelength 472.5 nm 475 nm C470MB290-S1000 C470MB290-0217 C470MB290-0218 C470MB290-0219 C470MB290-0220 C470MB290-0213 C470MB290-0214 C470MB290-0215 C470MB290-0216 C470MB290-0209 C470MB290-0210 C470MB290-0211 C470MB290-0212 C470MB290-0205 C470MB290-0206 C470MB290-0207 C470MB290-0208 16.0 mW 14.0 mW 12.0 mW 10.0 mW 465 nm 467.5 nm MB-8 470 nm Dominant Wavelength 472.5 nm 475 nm C470MB290-S0800 16.0 mW 14.0 mW 12.0 mW 10.0 mW C470MB290-0217 C470MB290-0218 C470MB290-0219 C470MB290-0220 C470MB290-0213 C470MB290-0214 C470MB290-0215 C470MB290-0216 C470MB290-0209 C470MB290-0210 C470MB290-0211 C470MB290-0212 C470MB290-0205 C470MB290-0206 C470MB290-0207 C470MB290-0208 C470MB290-0201 C470MB290-0202 C470MB290-0203 C470MB290-0204 8.0 mW 465 nm 467.5 nm 470 nm Dominant Wavelength 472.5 nm Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. 475 nm C470MB290-S1200 MB-10 Radiant Flux 470 nm Dominant Wavelength CPR3CK Rev. C 475 nm Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxMB290-Sxx00 (continued) C505MB290-S0600 Radiant Flux 505MB C505MB290-0205 C505MB290-0206 C505MB290-0203 C505MB290-0204 C505MB290-0201 C505MB290-0202 9.0 mW 7.5 mW 6.0 mW 500nm 505nm Dominant Wavelength C527MB290-S0500 Radiant Flux 527MB 510nm 7.0 mW 6.0 mW C527MB290-0207 C527MB290-0208 C527MB290-0209 C527MB290-0204 C527MB290-0205 C527MB290-0206 C527MB290-0201 C527MB290-0202 C527MB290-0203 5.0 mW 520 nm 525 nm 530 nm 535 nm Dominant Wavelength Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. CPR3CK Rev. C Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the MB product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Wavelength Shift vs Forward Current Relative Intensity vs Forward Current 12.00 140 10.00 120 460nm 8.00 100 527nm Shift (nm) % Intensity 6.00 80 60 505nm 4.00 2.00 40 0.00 20 -2.00 0 0 0 5 10 15 20 25 30 5 10 15 20 25 30 -4.00 If (mA) If (mA) Forward Current vs Forward Voltage Relative Intensity vs Peak Wavelength 100 30 80 Relative Intensity (%) 25 If (mA) 20 15 10 5 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 400 Vf (V) Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. CPR3CK Rev. C 500 600 Wavelength (nm) Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com