POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - Fax + 39 010 8681180 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT, IEGT, GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY ARF695 Repetitive voltage up to Mean forward current Surge current 6000 V 901 A 18 kA FINAL SPECIFICATION July 13 - Issue: 0 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 6000 V V RSM Non-repetitive peak reverse voltage 125 6100 V I Repetitive peak reverse current 125 75 125 3200 V RRM V DC LINK V=VRRM Permanent DC voltage mA CONDUCTING I F (AV) Mean forward current 180° sin, 50 Hz, Th=55°C, double side cooled 901 A I F (AV) Mean forward current 180° sin, 50 Hz, Tc=85°C, double side cooled 738 A I FSM Surge forward current Sine wave, 10 ms I² t I² t V FM Forward voltage V F(TO) r F 125 with reverse voltage up to 50% VRSM Forward current = 1570 A 18 kA 3 1620 x 10 A²s 125 4,53 V Threshold voltage 125 2,10 V Forward slope resistance 125 1,550 mohm SWITCHING Q RR IF= 1000 A VR= 100 V Reverse recovery charge 1800 µC 750 A 125 di/dt= 250 I RR Peak reverse recovery current Chord= 25 t RR Q RR I RR A/µs % Reverse recovery time IF= 1000 A 5 µs Reverse recovery charge VR= 350 V 3000 µC 1300 A Peak reverse recovery current S Softness (s-factor), min E OFF Turn off energy dissipation V FR Peak forward recovery di/dt= 500 Chord= 25 A/µs 125 ≥ % 0,6 1 di/dt= 500 A/µs 125 ≤ J 130 V MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled R th(c-h) Thermal impedance Case to heatsink, double side cooled Tj Operating junction temperature F 14,0 °C/kW 3,0 °C/kW -30 / 125 °C Mounting force 35 / 40 kN Mass 850 ORDERING INFORMATION : ARF695 S 60 standard specification Page 1 of 3 VRRM/100 g ARF695 FAST RECOVERY DIODE FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation July 13 - Issue: 0 SWITCHING CHARACTERISTICS QRR [µC] 3600 REVERSE RECOVERY CHARGE (MAXIMUM VALUE) Tj = 125°C IF = 500A; IF = 1000A; IF = 2500A REVERSE RECOVERY CURRENT (MAXIMUM VALUE) Tj = 125°C IF = 500A; IF = 1000A; IF = 2500A IRR [A] 1600 2500A 3200 2800 2500A 1000A 1400 1200 1000A 2400 2000 500A 500A 1000 800 1600 600 1200 800 400 400 200 0 0 0 100 200 300 400 500 600 0 100 200 300 400 500 di/dt [A/ms] VFR [V] FORWARD RECOVERY VOLTAGE ta = 140 120 Tj=125°C IRR di dt t b = t RR − t a 100 80 S= Tj = 25 °C tb ta 60 40 EOFF = VR ∗ Q RR − IRR ∗ 20 0 0 200 400 600 800 1000 1200 di/dt [A/µs] 600 di/dt [A/ms] Q RR = IRR ∗ Page 2 of 3 tRR 2 ta 2 POSEICO ARF695 FAST RECOVERY DIODE FINAL SPECIFICATION POSEICO SPA POwer SEmiconductors Italian COrporation July 13 - Issue: 0 FORWARD CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C Tj = 25°C 3000 20 25°C 125°C 18 16 14 2000 ITSM [kA] Forward Current [A] 2500 1500 1000 12 10 8 6 4 500 2 0 0 0 1 2 3 4 5 6 7 1 Forward Voltage [V] 10 n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 16 14 Zth j-h [°C/kW] 12 10 8 6 4 2 0 0,001 0,01 0,1 1 10 100 t[s] Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. Page 3 of 3 100