POSEICO ARF674S45

POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FAST RECOVERY DIODE
ARF674
Repetitive voltage up to
Mean forward current
Surge current
4500 V
945 A
15 kA
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
4500
V
V
RSM
Non-repetitive peak reverse voltage
125
4600
V
I
RRM
Repetitive peak reverse current
125
80
mA
V=VRRM
CONDUCTING
I
F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
945
A
I
F (AV)
Mean forward current
180° square,50 Hz,Th=55°C,double side cooled
940
A
I
FSM
Surge forward current
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
125
15
kA
Forward current = 1570
25
3
V
V
I² t
I² t
V
FM
Forward voltage
V
F(TO)
Threshold voltage
125
1.90
r
F
Forward slope resistance
125
0.700
A
1125 x1E3
A²s
mohm
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
V
FR
IF=
di/dt=
VR =
500 A
30 A/µs
100 V
125
8
µs
600
µC
150
A
0.4
Peak forward recovery
di/dt=
400 A/µs
42
V
Junction to heatsink, double side cooled
21
°C/kW
MOUNTING
R th(j-h)
Thermal impedance
T
Operating junction temperature
-30 / 125
°C
Mounting force
22.0 / 24.5
kN
F
j
Mass
520
ORDERING INFORMATION : ARF674 S 45
standard specification
VRRM/100
g
ARF674 FAST RECOVERY DIODE
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION
feb 97 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SQUARE WAVE
3500
DC
180°
3000
120°
DC
Power Dissipation [W]
90°
2500
60°
30°
2000
1500
1000
500
0
0
200
400
600
800
1000
1200
1400
Mean Forward Current [A]
SINE WAVE
3500
180°
120°
Power Dissipation [W]
3000
DC
90°
60°
2500
30°
2000
1500
1000
500
0
0
200
400
600
800
Mean Forward Current [A]
1000
1200
1400
ARF674 FAST RECOVERY DIODE
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION
feb 97 - ISSUE : 03
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
80
70
Tj = 125 °C
60
VFR [V]
50
40
IF
VFR
Tj = 25 °C
30
20
VF
10
0
0
200
400
600
800
1000
1200
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 125 °C
REVERSE RECOVERY CHARGE
Tj = 125 °C
3500
1200
1000 A
1000 A
3000
1000
500 A
800
500 A
2000
Irr [A]
Qrr [µC]
2500
1500
250 A
600
400
250 A
1000
200
500
0
0
0
100
200
di/dt
ta = Irr / (di/dt)
300
400
0
100
300
400
di/dt [A/µs]
[A/µs]
tb = trr - ta
200
IF
d i/d t
ta
tb
Softness (s factor) s = tb / ta
25% di Irr
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
Irr
Vr
ARF674 FAST RECOVERY DIODE
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION
feb 97 - ISSUE : 03
FORWARD CHARACTERISTIC
Tj = 125 °C
SURGE CHARACTERISTIC
Tj = 125 °C
3000
16
14
2500
ITSM [kA]
Forward Current [A]
12
2000
1500
1000
10
8
6
4
500
2
0
0
1
1.5
2
2.5
3
3.5
4
1
10
n° cycles
Forward Voltage [V]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
25.0
Zth j-h [°C/kW]
20.0
15.0
10.0
5.0
0.0
0.001
0.01
0.1
1
10
100
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement POSEICO SPA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background)
and
characteristics
is
reported.
100