ARF565

POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6445141
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FAST RECOVERY DIODE
ARF565
Repetitive voltage up to
Mean forward current
Surge current
3200 V
1215 A
14 kA
FINAL SPECIFICATION
apr 06 - ISSUE : 03
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
150
3200
V
V
RSM
Non-repetitive peak reverse voltage
150
3300
V
I
RRM
Repetitive peak reverse current
150
75
V=VRRM
mA
CONDUCTING
I
F (AV)
Mean forward current
180° sin, 50 Hz, Th=55°C, double side cooled
1215
A
I
F (AV)
Mean forward current
180° square, 50 Hz, Th=55°C, double side cooled
1220
A
I
FSM
Surge forward current
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
14
kA
150
I² t
I² t
980 x1E3
V
FM
Forward voltage
V
F(TO)
Threshold voltage
150
1,50
V
r
F
Forward slope resistance
150
0,500
mohm
Forward current =2000
A
150
2,5
A²s
V
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
IF=
di/dt=
VR =
1000 A
100 A/µs
150
5,0
µs
1000
µC
A
50 V
I rr
Peak reverse recovery current
420
s
Softness (s-factor), min
0,5
V
FR
Peak forward recovery
di/dt=
100 A/µs
150
40
V
26
°C/kW
MOUNTING
R th(j-h)
Thermal impedance
T
Operating junction temperature
-30 / 150
°C
Mounting force
18.0 / 20.0
kN
F
j
Junction to heatsink, double side cooled
Mass
500
ORDERING INFORMATION : ARF565 S 32
standard specification
VRRM/100
g
POSEICO
ARF565 FAST RECOVERY DIODE
FINAL SPECIFICATION
POSEICO SPA
POwer SEmiconductors Italian COrporation
apr 06 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SQUARE WAVE
4000
3500
DC
DC
180°
120°
Power Dissipation [W]
3000
90°
2500
60°
2000
30°
1500
1000
500
0
0
200
400
600
800
1000
1200
1400
1600
1800
Mean Forward Current [A]
SINE WAVE
4000
180°
Power Dissipation [W]
3500
DC
90°
3000
120°
60°
2500
30°
2000
1500
1000
500
0
0
500
1000
Mean Forward Current [A]
1500
2000
POSEICO
ARF565 FAST RECOVERY DIODE
FINAL SPECIFICATION
POSEICO SPA
POwer SEmiconductors Italian COrporation
apr 06 - ISSUE : 03
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
45
40
Tj = 125 °C
35
VFR [V]
30
25
20
IF
Tj = 25 °C
VFR
15
10
VF
5
0
0
200
400
600
800
1000
1200
di/dt [A/µs]
#N/D
#N/D
2500
1100
2000 A
2000
2000 A
1000
1000 A
900
500 A
800
1000 A
700
Irr [A]
Qrr [µC]
1500
500 A
1000
600
500
400
300
500
200
100
0
0
0
100
200
300
400
0
100
di/dt [A/µs]
ta = Irr / (di/dt)
tb = trr - ta
200
300
400
di/dt [A/µs]
IF
d i/d t
ta
tb
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
Irr
Vr
ARF565 FAST RECOVERY DIODE
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
apr 06 - ISSUE : 03
SURGE CHARACTERISTIC
Tj = 150 °C
4000
16
3500
14
3000
12
2500
10
ITSM [kA]
Forward Current [A]
FORWARD CHARACTERISTIC
Tj = 150 °C
2000
8
1500
6
1000
4
500
2
0
0
0,6
1,1
1,6
2,1
2,6
3,1
1
Forward Voltage [V]
10
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
30,0
Zth j-h [°C/kW]
25,0
20,0
15,0
10,0
5,0
0,0
0,001
0,01
0,1
1
10
100
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
100