POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE ARF565 Repetitive voltage up to Mean forward current Surge current 3200 V 1215 A 14 kA FINAL SPECIFICATION apr 06 - ISSUE : 03 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 150 3200 V V RSM Non-repetitive peak reverse voltage 150 3300 V I RRM Repetitive peak reverse current 150 75 V=VRRM mA CONDUCTING I F (AV) Mean forward current 180° sin, 50 Hz, Th=55°C, double side cooled 1215 A I F (AV) Mean forward current 180° square, 50 Hz, Th=55°C, double side cooled 1220 A I FSM Surge forward current Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM 14 kA 150 I² t I² t 980 x1E3 V FM Forward voltage V F(TO) Threshold voltage 150 1,50 V r F Forward slope resistance 150 0,500 mohm Forward current =2000 A 150 2,5 A²s V SWITCHING t rr Reverse recovery time Q rr Reverse recovery charge IF= di/dt= VR = 1000 A 100 A/µs 150 5,0 µs 1000 µC A 50 V I rr Peak reverse recovery current 420 s Softness (s-factor), min 0,5 V FR Peak forward recovery di/dt= 100 A/µs 150 40 V 26 °C/kW MOUNTING R th(j-h) Thermal impedance T Operating junction temperature -30 / 150 °C Mounting force 18.0 / 20.0 kN F j Junction to heatsink, double side cooled Mass 500 ORDERING INFORMATION : ARF565 S 32 standard specification VRRM/100 g POSEICO ARF565 FAST RECOVERY DIODE FINAL SPECIFICATION POSEICO SPA POwer SEmiconductors Italian COrporation apr 06 - ISSUE : 03 DISSIPATION CHARACTERISTICS SQUARE WAVE 4000 3500 DC DC 180° 120° Power Dissipation [W] 3000 90° 2500 60° 2000 30° 1500 1000 500 0 0 200 400 600 800 1000 1200 1400 1600 1800 Mean Forward Current [A] SINE WAVE 4000 180° Power Dissipation [W] 3500 DC 90° 3000 120° 60° 2500 30° 2000 1500 1000 500 0 0 500 1000 Mean Forward Current [A] 1500 2000 POSEICO ARF565 FAST RECOVERY DIODE FINAL SPECIFICATION POSEICO SPA POwer SEmiconductors Italian COrporation apr 06 - ISSUE : 03 SWITCHING CHARACTERISTICS FORWARD RECOVERY VOLTAGE 45 40 Tj = 125 °C 35 VFR [V] 30 25 20 IF Tj = 25 °C VFR 15 10 VF 5 0 0 200 400 600 800 1000 1200 di/dt [A/µs] #N/D #N/D 2500 1100 2000 A 2000 2000 A 1000 1000 A 900 500 A 800 1000 A 700 Irr [A] Qrr [µC] 1500 500 A 1000 600 500 400 300 500 200 100 0 0 0 100 200 300 400 0 100 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta 200 300 400 di/dt [A/µs] IF d i/d t ta tb Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr Vr ARF565 FAST RECOVERY DIODE FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation apr 06 - ISSUE : 03 SURGE CHARACTERISTIC Tj = 150 °C 4000 16 3500 14 3000 12 2500 10 ITSM [kA] Forward Current [A] FORWARD CHARACTERISTIC Tj = 150 °C 2000 8 1500 6 1000 4 500 2 0 0 0,6 1,1 1,6 2,1 2,6 3,1 1 Forward Voltage [V] 10 n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 30,0 Zth j-h [°C/kW] 25,0 20,0 15,0 10,0 5,0 0,0 0,001 0,01 0,1 1 10 100 t[s] Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100