IDT IDT70V7519S166BC

HIGH-SPEED 3.3V 256K x 36
SYNCHRONOUS
BANK-SWITCHABLE
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
Features:
◆
◆
◆
◆
◆
◆
◆
256K x 36 Synchronous Bank-Switchable Dual-ported
SRAM Architecture
– 64 independent 4K x 36 banks
– 9 megabits of memory on chip
Bank access controlled via bank address pins
High-speed data access
– Commercial: 3.4ns(200MHz)/3.6ns (166MHz)/4.2ns
(133MHz) (max.)
– Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)
Selectable Pipelined or Flow-Through output mode
Counter enable and repeat features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 5ns cycle time, 200MHz operation (14Gbps bandwidth)
– Fast 3.4ns clock to data out
◆
◆
◆
◆
◆
◆
IDT70V7519S
– 1.5ns setup to clock and 0.5ns hold on all control, data, and
address inputs @ 200MHz
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
Separate byte controls for multiplexed bus and bus
matching compatibility
LVTTL- compatible, 3.3V (±150mV) power supply
for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Industrial temperature range (-40°C to +85°C) is
available at 166MHz and 133MHz
Available in a 208-pin Plastic Quad Flatpack (PQFP),
208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball
Grid Array (BGA)
Supports JTAG features compliant with IEEE 1149.1
Functional Block Diagram
PL/FTL
OPTL
CLKL
ADSL
CNTENL
REPEATL
R/WL
CE0L
CE1L
BE3L
BE2L
BE1L
BE0L
OEL
MUX
CONTROL
LOGIC
CONTROL
LOGIC
4Kx36
MEMORY
ARRAY
(BANK 0)
PL/FTR
OPTR
CLKR
ADSR
CNTENR
REPEATR
R/WR
CE0R
CE1R
BE3R
BE2R
BE1R
BE0R
OER
MUX
I/O0L-35L
A11L
A0L
BA5L
BA4L
BA3L
BA2L
BA1L
BA0L
MUX
I/O
CONTROL
I/O
CONTROL
4Kx36
MEMORY
ARRAY
(BANK 1)
ADDRESS
DECODE
ADDRESS
DECODE
MUX
BANK
DECODE
BANK
DECODE
MUX
I/O0R-35R
A11R
A0R
BA5R
BA4R
BA3R
BA2R
BA1R
BA0R
4Kx36
MEMORY
ARRAY
(BANK 63)
NOTE:
1. The Bank-Switchable dual-port uses a true SRAM
core instead of the traditional dual-port SRAM core.
As a result, it has unique operating characteristics.
Please refer to the functional description on page 19
for details.
MUX
,
TDI
TDO
JTAG
TMS
TCK
TRST
5618 drw 01
DECEMBER 2002
1
©2002 Integrated Device Technology, Inc.
DSC 5618/5
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Description:
The IDT70V7519 is a high-speed 256Kx36 (9Mbit) synchronous
Bank-Switchable Dual-Ported SRAM organized into 64 independent
4Kx36 banks. The device has two independent ports with separate
control, address, and I/O pins for each port, allowing each port to access
any 4Kx36 memory block not already accessed by the other port.
Accesses by the ports into specific banks are controlled via the bank
address pins under the user's direct control.
Registers on control, data, and address inputs provide minimal setup
and hold times. The timing latitude provided by this approach allows
systems to be designed with very short cycle times. With an input data
register, the IDT70V7519 has been optimized for applications having
unidirectional or bidirectional data flow in bursts. An automatic power down
feature, controlled by CE0 and CE1, permits the on-chip circuitry of each
port to enter a very low standby power mode. The dual chip enables also
facilitate depth expansion.
The 70V7519 can support an operating voltage of either 3.3V or 2.5V
on one or both ports, controllable by the OPT pins. The power supply for
the core of the device(VDD) remains at 3.3V. Please refer also to the
functional description on page 19.
Pin Configuration(1,2,3,4)
01/11/02
A1
A2
IO19L IO18L
B1
I/O20R
C1
B2
VSS
C2
A3
VSS
B3
I/O18R
C3
A4
TDO
B4
TDI
C4
A5
NC
B5
BA5L
C5
VDDQL I/O19R VDDQR PL/FTL
D1
I/O22L
E1
D2
VSS
E2
D3
D4
NC
D5
I/O21L I/O20L BA3L
E3
A6
BA4L
B6
BA1L
C6
BA2L
D6
A11L
A7
BA0L
B7
A9L
C7
A10L
D7
A7L
A8
A8L
B8
BE2L
C8
BE3L
D8
BE0L
A9
BE1L
B9
CE0L
C9
CE1L
D9
VDD
A10
VDD
B10
VSS
C10
VSS
D10
A11
A12
A13
CLKL CNTENL A4L
B11
ADSL
C11
R/WL
D11
OEL REPEATL
B12
A5L
C12
A6L
D12
A3L
B13
A1L
C13
A2L
D13
VDD
E4
F2
F3
VDDQL I/O23R I/O24L
G1
I/O26L
H1
VDD
J1
VDDQL
K1
I/O28R
L1
G2
VSS
H2
G3
VDD
K2
VSS
L2
J3
VSS
K3
I/O27R
L3
M2
M3
VDDQL I/O29L I/O30R
N1
I/O31L
P1
N2
VSS
P2
N3
VSS
T1
R2
VDD
J4
J14
VSS
VSS
208-Pin fpBGA
Top View(6)
K4
VSS
K14
R3
L14
I/O6R
M4
M14
VSS
VSS
N4
R4
T2
T3
T4
I/O33R I/O34L VDDQL TMS
U1
VSS
U2
U3
I/O35L PL/FT R
U4
NC
B17
B16
VDDQR I/O16L I/O15R
C15
C16
C17
I/O16R I/O15L
D15
VSS
D17
D16
E15
F15
E17
E16
VSS
F16
I/O13L
F17
I/O12R I/O11L VDDQR
G15
G16
G17
H15
IO9R
J15
VDD
K15
H16
H17
VSS
J16
N14
L15
I/O7L
M15
K16
P6
P7
R5
R6
BA5R BA1R
T5
NC
U5
BA3R
T6
BA2R
U6
A11R
R7
A9R
T7
A10R
U7
A7R
P8
A8R
R8
P9
BE1R
R9
BE2R CE0R
T8
BE3R
U8
BE0R
T9
CE1R
U9
VDD
P10
VDD
R10
VSS
T10
VSS
U10
OER
P11
P12
P13
CLKR CNTENR A4R
R11
ADSR
T11
R/WR
R12
A5R
T12
A6R
U12
A3R
R13
A1R
T13
A2R
U13
A0R
P14
I/O2L
R14
VSS
T14
VSS
U14
VDD
VDDQR
K17
L16
VSS
L17
VSS
M16
I/O8L
M17
I/O6L I/O5R VDDQR
N15
N16
N17
I/O3R VDDQL I/O4R
P5
I/O10R
J17
VSS
I/O7R VDDQL I/O8R
L4
I/O33L I/O34R TCK
B15
VSS
I/O17R VDDQL I/O14L I/O14R
H14
70V7519BF
BF-208(5)
I/O32R I/O32L VDDQR I/O35R TRST BA4R BA0R
R1
D14
A17
A16
OPTL I/O17L
I/O9L VDDQL I/O10L I/O11R
H4
P4
VDD
G14
G4
I/O31R I/O30L
P3
C14
VSS
VSS
I/O29R I/O28L VDDQR I/O27L
M1
VSS
F14
F4
I/O26R VDDQR I/O25R
J2
B14
A15
I/O12L I/O13R
I/O25L I/O24R
H3
A0L
E14
I/O23L I/O22R VDDQR I/O21R
F1
A14
P15
I/O3L
R15
I/O5L
P17
P16
VSS
R16
I/O4L
R17
VDDQL I/O1R VDDQR
T15
I/O0R
U15
T16
T17
VSS
I/O2R
U17
U16
OPTR I/O0L
I/O1L
,
5618 drw 02c
NOTES:
1. All VDD pins must be connected to 3.3V power supply.
2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is
set to VIL (0V).
3. All VSS pins must be connected to ground supply.
4. Package body is approximately 15mm x 15mm x 1.4mm with 0.8mm ball pitch.
5. This package code is used to reference the package diagram.
6. This text does not indicate orientation of the actual part-marking.
6.42
2
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Pin Configuration(1,2,3,4) (con't.)
70V7519BC
BC-256(5)
256-Pin BGA
Top View(6)
11/08/01
A1
NC
B1
I/O18L
C1
A2
TDI
B2
NC
C2
I/O18R I/O19L
D1
D2
A3
NC
B3
TDO
C3
VSS
D3
A4
A5
A6
BA5L
BA2L
A11L
B4
B5
NC
C4
BA4L
D4
BA3L
C5
BA1L
D5
B6
BA0L
C6
A10L
D6
A7
A8L
B7
A9L
C7
A7L
D7
A8
A9
BE2L
CE1L
B9
B8
BE3L
BE1L
B10
B11
C10
C11
BE0L CLKL ADSL
D9
D8
A11
OEL CNTENL
CE0L R/WL REPEATL
C9
C8
A10
D10
D11
A12
A5L
B12
A4L
C12
A6L
D12
A13
A2L
B13
A1L
C13
A3L
D13
A14
A0L
B14
VDD
C14
A15
A16
NC
NC
B16
B15
I/O17L
NC
C16
C15
OPTL I/O17R I/O16L
D14
D16
D15
I/O20R I/O19R I/O20L PL/FTL VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDD I/O15R I/O15L I/O16R
E1
E2
E3
E4
I/O21R I/O21L I/O22L VDDQL
F1
F2
F3
F4
I/O23L I/O22R I/O23R VDDQL
G1
G2
G3
G4
I/O24R I/O24L I/O25L VDDQR
H1
H2
H3
H4
E5
VDD
F5
VDD
G5
VSS
H5
I/O26L I/O25R I/O26R VDDQR VSS
J1
J2
J3
J4
I/O27L I/O28R I/O27R VDDQL
K1
K2
K3
K4
I/O29R I/O29L I/O28L VDDQL
L1
L2
L3
L4
I/O30L I/O31R I/O30R VDDQR
M1
M2
M3
M4
I/O32R I/O32L I/O31L VDDQR
N1
N2
N3
N4
J5
VSS
K5
VSS
L5
VDD
M5
VDD
N5
E6
VDD
F6
VSS
G6
VSS
H6
VSS
J6
VSS
K6
VSS
L6
VSS
M6
VDD
N6
E7
VSS
F7
VSS
G7
VSS
H7
VSS
J7
VSS
K7
VSS
L7
VSS
M7
VSS
N7
E8
E9
VSS
VSS
F9
F8
VSS
VSS
G9
G8
VSS
H8
VSS
H9
VSS
J8
VSS
J9
VSS
K8
VSS
K9
VSS
L8
VSS
L9
VSS
M8
VSS
M9
VSS
N8
VSS
N9
E10
VSS
F10
VSS
G10
VSS
H10
VSS
J10
VSS
K10
VSS
L10
VSS
M10
VSS
N10
E11
VDD
F11
VSS
G11
VSS
H11
VSS
J11
VSS
K11
VSS
L11
VSS
M11
VDD
N11
E12
F12
P2
P3
I/O35R I/O34L TMS
R1
I/O35L
T1
NC
R2
NC
T2
TCK
R3
TRST
T3
NC
P4
P5
BA4R BA1R
R4
NC
T4
BA5R
R5
P6
A10R
R6
BA3R BA0R
T5
BA2R
T6
A11R
P7
A7R
R7
A9R
T7
A8R
P8
P9
P10
P11
BE1R BE0R CLKR ADSR
R8
R9
R10
R11
BE3R CE0R R/WR REPEATR
T8
T9
BE2R
CE1R
T10
T11
OER CNTENR
E14
E16
E15
F13
F14
F15
F16
VDD VDDQR I/O12R I/O13R I/O12L
G12
VSS
H12
VSS
J12
VSS
K12
VSS
L12
VDD
M12
VDD
N12
I/O33L I/O34R I/O33R PL/FTR VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL
P1
E13
VDD VDDQR I/O13L I/O14L I/O14R
P12
A6R
R12
A4R
T12
A5R
G13
G14
G16
G15
VDDQL I/O10L I/O11L I/O11R
H13
H14
VDDQL I/O9R
J13
J14
H16
H15
IO9L I/O10R
J16
J15
VDDQR I/O8R I/O7R
K13
K14
VDDQR I/O6R
L13
L14
VDDQL I/O5L
M13
M14
VDDQL I/O3R
N13
VDD
P13
A3R
R13
A1R
T13
A2R
N14
I/O2L
P14
K15
K16
I/O6L
L15
OPTR
T14
A0R
I/O7L
L16
I/O4R I/O5R
M16
M15
I/O3L
I/O4L
N16
N15
I/O1R I/O2R
P16
P15
I/O0L I/O0R
R14
I/O8L
I/O1L
R16
R15
NC
T15
NC
,
T16
NC
NC
5618 drw 02d
,
NOTES:
1. All VDD pins must be connected to 3.3V power supply.
2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is
set to VIL (0V).
3. All VSS pins must be connected to ground supply.
4. Package body is approximately 17mm x 17mm x 1.4mm, with 1.0mm ball-pitch.
5. This package code is used to reference the package diagram.
6. This text does not indicate orientation of the actual part-marking.
6.42
3
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
(1,2,3,4)
70V7519DR
DR-208(5)
208-Pin PQFP
Top View(6)
156
155
154
153
152
151
150
149
148
147
146
145
144
143
142
141
140
139
138
137
136
135
134
133
132
131
130
129
128
127
126
125
124
123
122
121
120
119
118
117
116
115
114
113
112
111
110
109
108
107
106
105
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
208
207
206
205
204
203
202
201
200
199
198
197
196
195
194
193
192
191
190
189
188
187
186
185
184
183
182
181
180
179
178
177
176
175
174
173
172
171
170
169
168
167
166
165
164
163
162
161
160
159
158
157
11/08/01
I/O19L
I/O19R
I/O20L
I/O20R
VDDQL
VSS
I/O21L
I/O21R
I/O22L
I/O22R
VDDQR
VSS
I/O23L
I/O23R
I/O24L
I/O24R
VDDQL
VSS
I/O25L
I/O25R
I/O26L
I/O26R
VDDQR
VSS
VDD
VDD
VSS
VSS
VDDQL
VSS
I/O27R
I/O27L
I/O28R
I/O28L
VDDQR
VSS
I/O29R
I/O29L
I/O30R
I/O30L
VDDQL
VSS
I/O31R
I/O31L
I/O32R
I/O32L
VDDQR
VSS
I/O33R
I/O33L
I/O34R
I/O34L
(con't.)
VSS
VDDQR
I/O18R
I/O18L
VSS
PL/FTL
TDI
TDO
NC
NC
BA5L
BA4L
BA3L
BA2L
BA1L
BA0L
A11L
A10L
A9L
A8L
A7L
BE3L
BE2L
BE1L
BE0L
CE1L
CE0L
VDD
VDD
VSS
VSS
CLKL
OEL
R/WL
ADSL
CNTENL
REPEATL
A6L
A5L
A4L
A3L
A2L
A1L
A0L
VDD
VDD
VSS
OPTL
I/O17L
I/O17R
VDDQR
VSS
Pin Configuration
Industrial and Commercial Temperature Ranges
I/O16L
I/O16R
I/O15L
I/O15R
VSS
VDDQL
I/O14L
I/O14R
I/O13L
I/O13R
VSS
VDDQR
I/O12L
I/O12R
I/O11L
I/O11R
VSS
VDDQL
I/O10L
I/O10R
I/O9L
I/O9R
VSS
VDDQR
VDD
VDD
VSS
VSS
VSS
VDDQL
I/O8R
I/O8L
I/O7R
I/O7L
VSS
VDDQR
I/O6R
I/O6L
I/O5R
I/O5L
VSS
VDDQL
I/O4R
I/O4L
I/O3R
I/O3L
VSS
VDDQR
I/O2R
I/O2L
I/O1R
I/O1L
VSS
VDDQL
I/O35R
I/O35L
PL/FTR
TMS
TCK
TRST
NC
NC
BA5R
BA4R
BA3R
BA2R
BA1R
BA0R
A11R
A10R
A9R
A8R
A7R
BE3R
BE2R
BE1R
BE0R
CE1R
CE0R
VDD
VDD
VSS
VSS
CLKR
OER
R/WR
ADSR
CNTENR
REPEATR
A6R
A5R
A4R
A3R
A2R
A1R
A0R
VDD
VSS
VSS
OPTR
I/O0L
I/O0R
VDDQL
VSS
,
5618 drw 02a
NOTES:
1. All VDD pins must be connected to 3.3V power supply.
2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V).
3. All VSS pins must be connected to ground supply.
4. Package body is approximately 28mm x 28mm x 3.5mm.
5. This package code is used to reference the package diagram.
6. This text does not indicate orientation of the actual part-marking.
6.42
4
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Pin Names
Left Port
Right Port
Names
CE0L, CE1L
CE0R, CE1R
Chip Enables
R/WL
R/WR
Read/Write Enable
OEL
OER
Output Enable
BA0L - BA5L
BA0R - BA5R
Bank Address (4)
A0L - A11L
A0R - A11R
Address
I/O0L - I/O35L
I/O0R - I/O35R
Data Input/Output
CLKL
CLKR
Clock
PL/FTL
PL/FTR
Pipeline/Flow-Through
ADSL
ADSR
Address Strobe Enable
CNTENL
CNTENR
Counter Enable
REPEATL
REPEATR
Counter Repeat(3)
BE0L - BE3L
BE0R - BE3R
Byte Enables (9-bit bytes)
VDDQL
VDDQR
Power (I/O Bus) (3.3V or 2.5V)(1)
OPTL
OPTR
Option for selecting VDDQX(1,2)
VDD
Power (3.3V)(1)
VSS
Ground (0V)
TDI
Test Data Input
TDO
Test Data Output
TCK
Test Logic Clock (10MHz)
TMS
Test Mode Select
TRST
Reset (Initialize TAP Controller)
NOTES:
1. VDD, OPTX, and VDDQX must be set to appropriate operating levels prior to
applying inputs on the I/Os and controls for that port.
2. OPTX selects the operating voltage levels for the I/Os and controls on that port.
If OPTX is set to VIH (3.3V), then that port's I/Os and controls will operate at 3.3V
levels and VDDQX must be supplied at 3.3V. If OPTX is set to VIL (0V), then that
port's I/Os and address controls will operate at 2.5V levels and VDDQX must be
supplied at 2.5V. The OPT pins are independent of one another—both ports can
operate at 3.3V levels, both can operate at 2.5V levels, or either can operate
at 3.3V with the other at 2.5V.
3. When REPEATX is asserted, the counter will reset to the last valid address loaded
via ADS X.
4. Accesses by the ports into specific banks are controlled by the bank address
pins under the user's direct control: each port can access any bank of memory
with the shared array that is not currently being accessed by the opposite port
(i.e., BA0L - BA 5L ≠ BA0R - BA 5R). In the event that both ports try to access the
same bank at the same time, neither access will be valid, and data at the two
specific addresses targeted by the ports within that bank may be corrupted (in
the case that either or both ports are writing) or may result in invalid output (in
the case that both ports are trying to read).
5618 tbl 01
6.42
5
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I—Read/Write and Enable Control
(1,2,3,4)
OE3
CLK
CE0
CE1
BE3
BE2
BE1
BE0
R/W
Byte 3
I/O27-35
Byte 2
I/O18-26
Byte 1
I/O9-17
Byte 0
I/O0-8
MODE
X
↑
H
X
X
X
X
X
X
High-Z
High-Z
High-Z
High-Z
Deselected–Power Down
X
↑
X
L
X
X
X
X
X
High-Z
High-Z
High-Z
High-Z
Deselected–Power Down
X
↑
L
H
H
H
H
H
X
High-Z
High-Z
High-Z
High-Z
All Bytes Deselected
X
↑
L
H
H
H
H
L
L
High-Z
High-Z
High-Z
DIN
Write to Byte 0 Only
X
↑
L
H
H
H
L
H
L
High-Z
High-Z
DIN
High-Z
Write to Byte 1 Only
X
↑
L
H
H
L
H
H
L
High-Z
DIN
High-Z
High-Z
Write to Byte 2 Only
X
↑
L
H
L
H
H
H
L
DIN
High-Z
High-Z
High-Z
Write to Byte 3 Only
X
↑
L
H
H
H
L
L
L
High-Z
High-Z
DIN
DIN
Write to Lower 2 Bytes Only
X
↑
L
H
L
L
H
H
L
DIN
DIN
High-Z
High-Z
Write to Upper 2 bytes Only
X
↑
L
H
L
L
L
L
L
DIN
DIN
DIN
DIN
Write to All Bytes
L
↑
L
H
H
H
H
L
H
High-Z
High-Z
High-Z
DOUT
Read Byte 0 Only
L
↑
L
H
H
H
L
H
H
High-Z
High-Z
DOUT
High-Z
Read Byte 1 Only
L
↑
L
H
H
L
H
H
H
High-Z
DOUT
High-Z
High-Z
Read Byte 2 Only
L
↑
L
H
L
H
H
H
H
DOUT
High-Z
High-Z
High-Z
Read Byte 3 Only
L
↑
L
H
H
H
L
L
H
High-Z
High-Z
DOUT
DOUT
Read Lower 2 Bytes Only
L
↑
L
H
L
L
H
H
H
DOUT
DOUT
High-Z
High-Z
Read Upper 2 Bytes Only
L
↑
L
H
L
L
L
L
H
DOUT
DOUT
DOUT
DOUT
H
X
X
X
X
X
X
X
X
High-Z
High-Z
High-Z
High-Z
Read All Bytes
Outputs Disabled
NOTES:
1. "H" = VIH, "L" = VIL, "X" = Don't Care.
2. ADS, CNTEN, REPEAT are set as appropriate for address access. Refer to Truth Table II for details.
3. OE is an asynchronous input signal.
4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
5618 tbl 02
Truth Table II—Address and Address Counter Control(1,2,7)
Address
An
Previous
Address
X
Addr
Used
CLK
An
↑
ADS
(4)
L
CNTEN
REPEAT(6)
I/O(3)
X
H
DI/O (n)
MODE
External Address Used
X
An
An + 1
↑
H
L
H
DI/O (n+1)
Counter Enabled—Internal Address generation
X
An + 1
An + 1
↑
H
H
H
DI/O (n+1)
External Addre ss Blocked—Counter disab led (An + 1 reused)
An
↑
X
(4)
DI/O (0)
X
X
X
(5)
L
Counter Set to last valid ADS load
5618 tbl 03
NOTES:
1. "H" = VIH, "L" = VIL, "X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/W, CE0, CE1, BEn and OE.
3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the data out will be delayed by one cycle.
4. ADS and REPEAT are independent of all other memory control signals including CE0, CE1 and BEn
5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other memory control signals including CE0, CE1, BEn.
6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS. This value is not set at power-up: a known location should be loaded
via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location.
7. The counter includes bank address and internal address. The counter will advance across bank boundaries. For example, if the counter is in Bank 0, at address
FFFh, and is advanced one location, it will move to address 0h in Bank 1. By the same token, the counter at FFFh in Bank 63 will advance to 0h in Bank 0. Refer
to Timing Waveform of Counter Repeat, page 18. Care should be taken during operation to avoid having both counters point to the same bank (i.e., ensure BA0L
- BA5L ≠ BA0R - BA5R), as this condition will invalidate the access for both ports. Please refer to the functional description on page 19 for details.
6.42
6
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Recommended Operating
Temperature and Supply Voltage(1)
Grade
Commercial
Industrial
Industrial and Commercial Temperature Ranges
Recommended DC Operating
Conditions with VDDQ at 2.5V
Symbol
Parameter
Ambient
Temperature
GND
VDD
V DD
Core Supply Voltage
0OC to +70OC
0V
3.3V + 150mV
VDDQ
I/O Supply Voltage
(3)
0V
3.3V + 150mV
V SS
Ground
O
O
-40 C to +85 C
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
5618 tbl 04
Min.
Typ.
Max.
Unit
3.15
3.3
3.45
V
2.4
2.5
2.6
V
0
0
0
VDDQ + 100mV
(2)
V
V
VIH
Input High Voltage
(Address & Control Inputs)
1.7
____
VIH
Input High Voltage - I/O(3)
1.7
____
VDDQ + 100mV(2)
V
____
0.7
V
VIL
Input Low Voltage
-0.3
(1)
5618 tbl 05a
NOTES:
1. Undershoot of VIL > -1.5V for pulse width less than 10ns is allowed.
2. VTERM must not exceed VDDQ + 100mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VIL (0V), and VDDQX for that port must be supplied
as indicated above.
Absolute Maximum Ratings(1)
Symbol
Rating
Commercial
& Industrial
Unit
VTERM(2)
Terminal Voltage
with Respect to
GND
-0.5 to +4.6
V
TBIAS
Temperature
Under Bias
-55 to +125
o
C
TSTG
Storage
Temperature
-65 to +150
o
C
IOUT
DC Output Current
Recommended DC Operating
Conditions with VDDQ at 3.3V
Symbol
50
mA
5618 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or
4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV.
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.15
3.3
3.45
V
VDDQ
I/O Supply Voltage (3)
3.15
3.3
3.45
V
VSS
Ground
0
0
0
(2)
VDDQ + 150mV
V
V
VIH
Input High Voltage
(Address & Control Inputs)(3)
2.0
____
VIH
Input High Voltage - I/O(3)
2.0
____
VDDQ + 150mV(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
5618 tbl 05b
NOTES:
1. Undershoot of VIL > -1.5V for pulse width less than 10ns is allowed.
2. VTERM must not exceed VDDQ + 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be
supplied as indicated above.
6.42
7
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
(1)
Capacitance
(TA = +25°C, F = 1.0MHZ) PQFP ONLY
Symbol
CIN
Parameter
Input Capacitance
(3)
COUT
Output Capacitance
Conditions(2)
Max.
Unit
VIN = 3dV
8
pF
V OUT = 3dV
10.5
pF
5618 tbl 07
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV)
70V7519S
Symbol
Min.
Max.
Unit
VDDQ = Max., VIN = 0V to V DDQ
___
10
µA
Output Leakage Current
CE0 = VIH or CE1 = VIL, VOUT = 0V to V DDQ
___
10
µA
VOL (3.3V)
Output Low Voltage (2)
IOL = +4mA, VDDQ = Min.
___
0.4
V
VOH (3.3V)
Output High Voltage(2)
IOH = -4mA, VDDQ = Min.
2.4
___
V
VOL (2.5V)
(2)
IOL = +2mA, VDDQ = Min.
___
0.4
V
2.0
___
V
|ILI|
|ILO|
VOH (2.5V)
Parameter
(1)
Input Leakage Current
(1)
Output Low Voltage
Output High Voltage
(2)
Test Conditions
IOH = -2mA, VDDQ = Min.
5618 tbl 08
NOTES:
1. At VDD < 2.0V leakages are undefined.
2. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.
6.42
8
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(5) (VDD = 3.3V ± 150mV)
Sym bol
IDD
IS B1
IS B2
IS B3
IS B4
P aram eter
Test Condition
Version
70V 7519S200 (7)
Com 'l O nly
70V 7519S166 (6)
Com 'l
& Ind
Typ. (4)
M ax.
Typ. (4)
M ax.
Typ. (4)
M ax.
Unit
mA
70V 7519S133
Com 'l
& Ind
Dy nam ic O p e rating
Curre nt (Bo th
P o rts A c tiv e )
CEL and CER = V IL ,
O utp uts Dis ab le d ,
f = fM A X (1 )
COM 'L
S
815
950
675
790
550
645
IND
S
____
____
675
830
550
675
S tand b y Curre nt
(Bo th P o rts - TTL
Le v e l Inp uts )
CEL = CER = V IH
f = fM A X (1 )
COM 'L
S
340
410
275
340
250
295
IND
S
____
____
275
355
250
310
S tand b y Curre nt
(One P o rt - TTL
Le v e l Inp uts )
CE"A " = V IL and CE"B " = V IH
Ac tiv e P o rt Outp uts Disab le d ,
f= fM A X (1 )
COM 'L
S
690
770
515
640
460
520
IND
S
____
____
515
660
460
545
F ull Stand b y Curre nt
(Bo th P o rts - CM O S
Le v e l Inp uts )
B o th Po rts CEL and
CER > V DD - 0.2V, V IN > V DD - 0.2V
o r V IN < 0.2 V, f = 0 (2 )
COM 'L
S
10
30
10
30
10
30
IND
S
____
____
10
40
10
40
F ull Stand b y Curre nt
(One P o rt - CM OS
Le v e l Inp uts )
CE"A " < 0.2V and CE"B " > V DD - 0.2V
V IN > V DD - 0.2V o r V IN < 0.2V
Ac tiv e P o rt, O utp uts Disab le d , f = f M A X (1 )
COM 'L
S
690
770
515
640
460
520
IND
S
____
____
515
660
460
545
(3 )
(3 )
mA
mA
mA
mA
5618 tb l 0 9
NOTES:
1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. VDD = 3.3V, TA = 25°C for Typ, and are not production tested. IDD DC (f=0) = 120mA (Typ).
5. CEX = V IL means CE0X = VIL and CE1X = VIH
CEX = VIH means CE0X = VIH or CE1X = VIL
CEX < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V
CEX > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X < 0.2V
"X" represents "L" for left port or "R" for right port.
6. 166MHz Industrial Temperature not available in BF-208 package.
7. This speed grade available when VDDQ = 3.3.V for a specific port (i.e., OPTx = VIH). This speed grade available in BC-256 package only.
6.42
9
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Test Conditions (VDDQ - 3.3V/2.5V)
Input Pulse Levels (Address & Controls)
GND to 3.0V/GND to 2.4V
Input Pulse Levels (I/Os)
GND to 3.0V/GND to 2.4V
Input Rise/Fall Times
2.5V
833Ω
2ns
Input Timing Reference Levels
1.5V/1.25V
Output Reference Levels
1.5V/1.25V
Output Load
DATAOUT
5pF*
770Ω
Figures 1 and 2
5618 tbl 10
,
3.3V
590Ω
50Ω
50Ω
DATAOUT
1.5V/1.25
10pF
(Tester)
,
DATAOUT
435Ω
5pF*
5618 drw 03
Figure 1. AC Output Test load.
5618 drw 04
Figure 2. Output Test Load
(For tCKLZ , tCKHZ, tOLZ, and tOHZ).
*Including scope and jig.
10.5pF is the I/O capacitance of this
device, and 10pF is the AC Test Load
Capacitance.
7
6
5
4
∆tCD
(Typical, ns) 3
2
•
1
•
20.5
•
30
•
50
80
100
200
-1
Capacitance (pF)
5618 drw 05
Figure 3. Typical Output Derating (Lumped Capacitive Load).
6.42
10
,
,
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating Temperature Range
(Read and Write Cycle Timing)(2,3) (VDD = 3.3V ± 150mV, TA = 0°C to +70°C)
70V7519S200 (5)
Com'l Only
Symbol
Parameter
70V7519S166 (3,4)
Com'l
& Ind
70V7519S133 (3)
Com'l
& Ind
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tCY C1
Clo ck Cycle Time (Flo w-Thro ug h) (1)
15
____
20
____
25
____
ns
tCY C2
Clo ck Cycle Time (P ip e line d) (1)
5
____
6
____
7.5
____
ns
5
____
6
____
7
____
ns
5
____
6
____
7
____
ns
2.0
____
2.1
____
2.6
____
ns
2.0
____
2.1
____
2.6
____
ns
tCH1
tCL 1
tCH2
tCL 2
Clo ck Hig h Time (Flo w-Thro ug h)
Clo ck Lo w Tim e (Flow-Thro ugh)
Clo ck Hig h Time (P ip e line d)
Clo ck Lo w Tim e (P ipe line d )
(1)
(1)
(2)
(1)
Clo ck Rise Time
____
1.5
____
1.5
____
1.5
ns
tF
Clo ck Fall Time
____
1.5
____
1.5
____
1.5
ns
tS A
A d dre ss Se tup Tim e
1.5
____
1.7
____
1.8
____
ns
tHA
A d dre ss Ho ld Tim e
0.5
____
0.5
____
0.5
____
ns
tS C
Chip E nab le S e tup Time
1.5
____
1.7
____
1.8
____
ns
0.5
____
0.5
____
0.5
____
ns
1.5
____
1.7
____
1.8
____
ns
0.5
____
0.5
____
0.5
____
ns
1.5
____
1.7
____
1.8
____
ns
0.5
____
0.5
____
0.5
____
ns
1.5
____
1.7
____
1.8
____
ns
0.5
____
0.5
____
0.5
____
ns
1.5
____
1.7
____
1.8
____
ns
0.5
____
0.5
____
0.5
____
ns
1.5
____
1.7
____
1.8
____
ns
____
0.5
____
0.5
____
ns
tR
tHC
tS W
tHW
tS D
Chip E nab le Ho ld Time
R/W S e tup Time
R/W Ho ld Time
Inp ut Data S e tup Time
tHD
Input Data Ho ld Tim e
tSA D
ADS S e tup Time
tHA D
ADS Ho ld Time
tSCN
CNTEN S e tup Time
tHCN
CNTEN Ho ld Time
tS RP T
REPEAT S e tup Time
tHRP T
REPEAT Ho ld Time
0.5
tOE
Outp ut Enab le to Data Valid
____
4.0
____
4.0
____
4.2
ns
tOL Z
Outp ut Enab le to Outp ut Lo w-Z
0.5
____
0.5
____
0.5
____
ns
tO HZ
Outp ut Enab le to Outp ut Hig h-Z
1
3.4
1
3.6
1
4.2
ns
____
tCD1
tCD2
Clo ck to Data Valid (Flo w-Thro ug h)
Clo ck to Data Valid (Pip e lined )
(1)
(1)
10
____
12
____
15
ns
____
3.4
____
3.6
____
4.2
ns
1
____
1
____
ns
tDC
Data Output Ho ld A fte r Clo ck Hig h
1
____
tCK HZ
Clo ck Hig h to Outp ut Hig h-Z
1
3.4
1
3.6
1
4.2
ns
0.5
____
0.5
____
0.5
____
ns
5.0
____
6.0
____
7.5
____
tCKL Z
Clo ck Hig h to Outp ut Lo w-Z
Port-to-Port Delay
tCO
Clo ck-to -Clo ck Offse t
ns
5 618 tb l 11
NOTES:
1. The Pipelined output parameters (t CYC2, tCD2) apply to either or both left and right ports when FT/PIPEX = VIH. Flow-through parameters (tCYC1, tCD1) apply when
FT/PIPEX = VIL for that port.
2. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE) and FT/PIPE. FT/PIPE should be treated as a
DC signal, i.e. steady state during operation.
3. These values are valid for either level of V DDQ (3.3V/2.5V). See page 5 for details on selecting the desired operating voltage levels for each port.
4. 166MHz Industrial Temperature not available in BF-208 package.
5. This speed grade available when VDDQ = 3.3.V for a specific port (i.e., OPTx = VIH). This speed grade available in BC-256 package only.
6.42
11
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle for Pipelined Operation
(ADS Operation) (FT/PIPE'X' = V IH)(2)
tCYC2
tCH2
tCL2
CLK
CE0
tSC
tSC
tHC
tHC
(3)
CE1
tSB
tSB
tHB
BEn
R/W
tSW
tHW
tSA
tHA
(4)
ADDRESS
An
An + 1
(1 Latency)
An + 2
An + 3
tDC
tCD2
DATAOUT
Qn
tCKLZ
OE
tHB
(5)
Qn + 1
Qn + 2
(5)
(1)
tOHZ
tOLZ
(1)
tOE
5618 drw 06
Timing Waveform of Read Cycle for Flow-through Output
(FT/PIPE"X" = VIL)(2,6)
tCYC1
tCH1
tCL1
CLK
CE0
tSC
tSC
tHC
tHC
(3)
CE1
tSB
tHB
BEn
tSB
tHB
(5)
R/W
tSW tHW
tSA
(4)
ADDRESS
tHA
An
An + 1
tCD1
DATAOUT
An + 2
tCKHZ
Qn
Qn + 2 (5)
Qn + 1
tCKLZ
OE
An + 3
tDC
tOHZ
tOLZ
tDC
(1)
tOE
NOTES:
1. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge.
2. ADS = VIL, CNTEN and REPEAT = VIH.
3. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, BEn = VIH following the next rising edge of the clock. Refer to
Truth Table 1.
4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers
are for reference use only.
5. If BEn was HIGH, then the appropriate Byte of DATA OUT for Qn + 2 would be disabled (High-Impedance state).
6. "x" denotes Left or Right port. The diagram is with respect to that port.
6.42
12
5618 drw 07
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of a Multi-Device Pipelined Read(1,2)
tCYC2
tCH2
tCL2
CLK
tSA
tHA
A0
ADDRESS(B1)
tSC
tHC
CE0(B1)
tSC
tHC
tCD2
tCD2
tCKHZ
Q0
DATAOUT(B1)
tSA
A0
tSC
Q3
tCKLZ
tDC
tCKHZ
tHA
A6
A5
A4
A3
A2
A1
tSC
CE0(B2)
tCD2
Q1
tDC
ADDRESS(B2)
A6
A5
A4
A3
A2
A1
tHC
tHC
tCD2
DATAOUT(B2)
tCKHZ
tCD2
Q4
Q2
tCKLZ
tCKLZ
5618 drw 08
Timing Waveform of a Multi-Device Flow-Through Read(1,2)
tCH1
tCYC1
tCL1
CLK
tSA
A0
ADDRESS(B1)
CE0(B1)
tHA
tSC
A6
A5
A4
A3
A2
A1
tHC
tSC tHC
tCD1
tCD1
D0
DATAOUT(B1)
tCKHZ
tCD1
D3
tCKLZ
tDC
(1)
D5
tCKHZ (1)
tCKLZ
(1)
tHA
A0
ADDRESS(B2)
tCD1
D1
tDC
tSA
(1)
A1
A6
A5
A4
A3
A2
tSC tHC
CE0(B2)
tSC
tHC
tCD1
DATAOUT(B2)
tCKLZ
(1)
tCKHZ
(1)
tCD1
D2
tCKLZ
(1)
tCKHZ
(1)
D4
5618 drw 09
NOTES:
1. B1 Represents Device #1; B2 Represents Device #2. Each Device consists of one IDT70V7519 for this waveform,
and are setup for depth expansion in this example. ADDRESS(B1) = ADDRESS(B2) in this situation.
2. BEn, OE, and ADS = VIL; CE1(B1), CE1(B2), R/W, CNTEN, and REPEAT = VIH.
6.42
13
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Port A Write to Pipelined Port B Read(1,2,4)
CLK"A"
tSW
tHW
tSA
tHA
R/W"A"
BANK ADDRESS
AND ADDRESS"A"
An
tSD
DATAIN"A"
tHD
Dn
tCO(3)
CLK"B"
tCD2
R/W"B"
BANK ADDRESS
AND ADDRESS"B"
tSW
tHW
tSA
tHA
An
DATAOUT"B"
Dn
tDC
5618 drw 10
NOTES:
1. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
2. OE = VIL for Port "B", which is being read from. OE = VIH for Port "A", which is being written to.
3. If tCO < minimum specified, then operations from both ports are INVALID. If tCO ≥ minimum, then data from Port "B" read is available on first Port "B" clock cycle
(ie, time from write to valid read on opposite port will be tCO + tCYC2 + tCD2 ).
4. All timing is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A"
Timing Waveform with Port-to-Port Flow-Through Read(1,2,4)
CLK "A"
tSW tHW
R/W "A"
tSA
BANK ADDRESS
AND ADDRESS "A"
DATAIN "A"
tHA
An
tSD
tHD
Dn
tCO(3)
CLK "B"
tCD1
R/W "B"
BANK ADDRESS
AND ADDRESS "B"
tSW
tHW
tSA
tHA
An
DATAOUT "B"
Dn
tDC
tDC
5618 drw 11
NOTES:
1. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
2. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to.
3. If tCO < minimum specified, then operations from both ports are INVALID. If tCO ≥ minimum, then data from Port "B" read is available on first Port "B" clock cycle
(i.e., time from write to valid read on opposite port will be tCO + t CD1).
4. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".
6.42
14
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read-to-Write-to-Read
tCYC2
(OE = V IL)(2)
tCH2
tCL2
CLK
CE0
tSC
tHC
tSB
tHB
CE1
BEn
tSW tHW
R/W
(3)
ADDRESS
tSW tHW
An
tSA tHA
An +1
An + 2
An + 3
An + 2
An + 4
tSD t HD
DATAIN
Dn + 2
tCD2
(1)
tCKHZ
tCKLZ
tCD2
Qn + 3
Qn
DATAOUT
READ
NOP
(4)
WRITE
READ
5618 drw 12
NOTES:
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
2. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. "NOP" is "No Operation".
3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers
are for reference use only.
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
Timing Waveform of Pipelined Read-to-Write-to-Read (OE Controlled)(2)
tCYC2
tCH2
tCL2
CLK
CE0
tSC
tHC
tSB
tHB
CE1
BEn
tSW tHW
R/W
tSW tHW
(3)
ADDRESS
An
tSA tHA
An +1
An + 2
tSD
DATAIN
Dn + 2
tCD2
(1)
Qn
DATAOUT
An + 3
An + 4
An + 5
tHD
Dn + 3
tCKLZ
tCD2
Qn + 4
(4)
tOHZ
OE
READ
WRITE
READ
5618 drw 13
NOTES:
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
2. CE 0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference
use only.
4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows.
6.42
15
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(2)
tCH1
tCYC1
tCL1
CLK
CE0
tSC tHC
CE1
tSB
tHB
BEn
tSW tHW
R/W
tSW tHW
(3)
ADDRESS
tSA
An
tHA
An +1
An + 2
An + 4
An + 3
An + 2
tSD tHD
DATAIN
Dn + 2
tCD1
(1)
tCD1
Qn
DATAOUT
t CD1
tCD1
Qn + 1
tDC
tCKLZ
tCKHZ
READ
NOP
(4)
Qn + 3
tDC
READ
WRITE
5618 drw 14
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)(2)
tCYC1
tCH1
tCL1
CLK
CE0
tSC tHC
CE1
tSB
tHB
BEn
tSW tHW
tSW tHW
R/W
(3)
An
tSA tHA
ADDRESS
An +1
DATAIN
(1)
DATAOUT
An + 2
tSD tHD
An + 3
Dn + 2
Dn + 3
tDC
tCD1
An + 4
tOE
tCD1
Qn
tCKLZ
tOHZ
An + 5
tCD1
Qn + 4
tDC
OE
READ
WRITE
READ
5618 drw 15
NOTES:
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
2. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for
reference use only.
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
6.42
16
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read with Address Counter Advance(1)
tCH2
tCYC2
tCL2
CLK
tSA
tHA
An
ADDRESS
tSAD tHAD
ADS
tSAD tHAD
CNTEN
tSCN tHCN
tCD2
DATAOUT
Qx - 1(2)
Qn + 2(2)
Qn + 1
Qn
Qx
Qn + 3
tDC
READ
EXTERNAL
ADDRESS
READ
WITH
COUNTER
COUNTER
HOLD
READ WITH COUNTER
5618 drw 16
Timing Waveform of Flow-Through Read with Address Counter Advance (1)
tCH1
tCYC1
tCL1
CLK
tSA
ADDRESS
tHA
An
tSAD tHAD
ADS
tSAD tHAD
tSCN tHCN
CNTEN
tCD1
DATAOUT
Qx(2)
Qn
Qn + 1
Qn + 2
Qn + 3(2)
Qn + 4
tDC
READ
EXTERNAL
ADDRESS
READ WITH COUNTER
COUNTER
HOLD
READ
WITH
COUNTER
5618 drw 17
NOTES:
1. CE 0, OE, BEn = VIL; CE1, R/W, and REPEAT = V IH.
2. If there is no address change via ADS = V IL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then
the data output remains constant for subsequent clocks.
6.42
17
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Address Counter Advance
(Flow-through or Pipelined Inputs)(1,6)
tCH2
tCYC2
tCL2
CLK
tSA
tHA
An
ADDRESS
INTERNAL(3)
ADDRESS
An(5)
An + 2
An + 1
An + 4
An + 3
tSAD tHAD
ADS
tSCN tHCN
CNTEN
tSD tHD
Dn + 1
Dn
DATAIN
WRITE
EXTERNAL
ADDRESS
Dn + 1
Dn + 4
Dn + 3
Dn + 2
WRITE
WRITE
WITH COUNTER COUNTER HOLD
WRITE WITH COUNTER
5618 drw 18
Timing Waveform of Counter Repeat for Flow Through Mode(2,6,7)
tCYC2
CLK
tSA tHA
An
ADDRESS
INTERNAL(3)
ADDRESS
An+2
An+1
An
An+2
An
An+1
An+2
An+2
tSAD tHAD
ADS
tSW tHW
R/W
tSCN tHCN
CNTEN
REPEAT
(4)
tSRPT tHRPT
tSD tHD
DATAIN
D0
D3
D2
D1
tCD1
An
DATAOUT
WRITE TO
ADS
ADDRESS
An
ADVANCE
COUNTER
WRITE TO
An+1
ADVANCE
COUNTER
WRITE TO
An+2
HOLD
COUNTER
WRITE TO
An+2
REPEAT
READ LAST
ADS
ADDRESS
An
An+1
An+2
An+2
,
ADVANCE
COUNTER
READ
An+1
ADVANCE
COUNTER
READ
An+2
HOLD
COUNTER
READ
An+2
5618 drw 19
NOTES:
1. CE0, BEn, and R/W = VIL; CE1 and REPEAT = VIH.
2. CE0, BEn = VIL; CE1 = VIH.
3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH.
4. No dead cycle exists during REPEAT operation. A READ or WRITE cycle may be coincidental with the counter REPEAT cycle: Address loaded by last valid
ADS load will be accessed. For more information on REPEAT function refer to Truth Table II.
5. CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is
written to during this cycle.
6. The counter includes bank address and internal address. The counter will advance across bank boundaries. For example, if the counter is in Bank 0, at address
FFFh, and is advanced one location, it will move to address 0h in Bank 1. By the same token, the counter at FFFh in Bank 63 will advance to 0h in Bank 0.
7. For Pipelined Mode user should add 1 cycle latency for outputs as per timing waveform of read cycle for pipelined operations.
6.42
18
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Functional Description
The IDT70V7519 is a high-speed 256Kx36 (9 Mbit) synchronous
Bank-Switchable Dual-Ported SRAM organized into 64 independent
4Kx36 banks. Based on a standard SRAM core instead of a traditional true
dual-port memory core, this bank-switchable device offers the benefits of
increased density and lower cost-per-bit while retaining many of the
features of true dual-ports. These features include simultaneous, random
access to the shared array, separate clocks per port, 166 MHz operating
speed, full-boundary counters, and pinouts compatible with the IDT70V3599
(128Kx36) dual-port family.
The two ports are permitted independent, simultaneous access into
separate banks within the shared array. Access by the ports into specific
banks are controlled by the bank address pins under the user's direct
control: each port can access any bank of memory with the shared array
that is not currently being accessed by the opposite port (i.e., BA0L - BA5L
≠ BA0R - BA5R). In the event that both ports try to access the same bank
at the same time, neither access will be valid, and data at the two specific
addresses targeted by the ports within that bank may be corrupted (in the
case that either or both ports are writing) or may result in invalid output (in
the case that both ports are trying to read).
The IDT70V7519 provides a true synchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
interface. Registered inputs provide minimal setup and hold times on
address, data and all critical control inputs.
An asynchronous output enable is provided to ease asynchronous
bus interfacing. Counter enable inputs are also provided to stall the
operation of the address counters for fast interleaved memory applications.
A HIGH on CE0 or a LOW on CE1 for one clock cycle will power down
the internal circuitry on each port (individually controlled) to reduce static
power consumption. Dual chip enables allow easier banking of multiple
IDT70V7519s for depth expansion configurations. Two cycles are
required with CE0 LOW and CE1 HIGH to read valid data on the outputs.
Depth and Width Expansion
The IDT70V7519 features dual chip enables (refer to Truth
Table I) in order to facilitate rapid and simple depth expansion with no
requirements for external logic. Figure 4 illustrates how to control the
various chip enables in order to expand two devices in depth.
The IDT70V7519 can also be used in applications requiring expanded
width, as indicated in Figure 4. Through combining the control signals, the
devices can be grouped as necessary to accommodate applications
needing 72-bits or wider.
BA6(1)
IDT70V7519
CE0
CE1
CE1
VDD
CE1
IDT70V7519
VDD
CE1
CE0
CE0
Control Inputs
CE0
Control Inputs
Control Inputs
IDT70V7519
IDT70V7519
Control Inputs
5618 drw 20
Figure 4. Depth and Width Expansion with IDT70V7519
BE,
R/W,
OE,
CLK,
ADS,
REPEAT,
CNTEN
NOTE:
1. In the case of depth expansion, the additional address pin logically serves as an extension of the bank address. Accesses by the ports into specific banks are
controlled by the bank address pins under the user's direct control: each port can access any bank of memory within the shared array that is not currently
being accessed by the opposite port (i.e., BA0L - BA6L ≠ BA0R - BA6R). In the event that both ports try to access the same bank at the same time, neither
access will be valid, and data at the two specific addresses targeted by the parts within that bank may be corrupted (in the case that either or both parts are
writing) or may result in invalid output (in the case that both ports are trying to read).
6.42
19
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
JTAG Timing Specifications
tJF
tJCL
tJCYC
tJR
tJCH
TCK
Device Inputs(1)/
TDI/TMS
tJS
Device Outputs(2)/
TDO
tJDC
tJH
tJRSR
tJCD
TRST
,
5618 drw 21
tJRST
Figure 5. Standard JTAG Timing
NOTES:
1. Device inputs = All device inputs except TDI, TMS, TRST, and TCK.
2. Device outputs = All device outputs except TDO.
JTAG AC Electrical
Characteristics(1,2,3,4)
70V7519
Symbol
Parameter
Min.
Max.
Units
tJCYC
JTAG Clock Input Period
100
____
ns
40
____
ns
40
____
ns
(1)
tJCH
tJCL
JTAG Clock HIGH
JTAG Clock Low
tJR
JTAG Clock Rise Time
____
3
ns
tJF
JTAG Clock Fall Time
____
3(1)
ns
50
____
ns
JTAG Reset Recovery
50
____
ns
tJCD
JTAG Data Output
____
25
ns
tJDC
JTAG Data Output Hold
0
____
ns
tJS
JTAG Setup
15
____
ns
15
____
tJRST
tJRSR
tJH
JTAG Reset
JTAG Hold
ns
5618 tbl 12
NOTES:
1. Guaranteed by design.
2. 30pF loading on external output signals.
3. Refer to AC Electrical Test Conditions stated earlier in this document.
4. JTAG operations occur at one speed (10MHz). The base device may run at
any speed specified in this datasheet.
6.42
20
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Identification Register Definitions
Instruction Field
Value
Revision Number (31:28)
Description
0x0
Reserved for version number
IDT Device ID (27:12)
0x300
Defines IDT part number
IDT JEDEC ID (11:1)
0x33
Allows unique identification of device vendor as IDT
ID Register Indicator Bit (Bit 0)
1
Indicates the presence of an ID register
5618 tbl 13
Scan Register Sizes
Register Name
Bit Size
Instruction (IR)
4
Bypass (BYR)
1
Identification (IDR)
Boundary Scan (BSR)
32
Note (3)
5618 tbl 14
System Interface Parameters
Instruction
Code
Description
EXTEST
0000
Forces contents of the bound ary scan cells onto the device outputs (1) .
Places the boundary scan registe r (BSR) between TDI and TDO.
BYPASS
1111
Places the bypass registe r (BYR) between TDI and TDO.
IDCODE
0010
Loads the ID register (IDR) with the vendor ID code and places the
register between TDI and TDO.
0100
Places the bypass register (BYR) between TDI and TDO. Forces all
device output drivers to a High-Z state.
HIGHZ
Uses BYR. Forces contents of the bound ary scan cells onto the device
outputs. Places the bypass registe r (BYR) between TDI and TDO.
CLAMP
0011
SAMPLE/PRELOAD
0001
Places the boundary scan registe r (BSR) between TDI and TDO.
SAMPLE allows data from device inputs (2) and outputs (1) to be captured
in the boundary scan cells and shifted serially through TDO. PRELOAD
allows data to be input serially into the b oundary scan cells via the TDI.
All other codes
Several combinations are reserved. Do not use codes other than those
identified above.
RESERVED
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, TRST, and TCK.
3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local
IDT sales representative.
6.42
21
5618 tbl 15
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Ordering Information
IDT
XXXXX
A
999
A
A
Device
Type
Power
Speed
Package
Process/
Temperature
Range
Blank
I
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
BF
DR
BC
208-pin fpBGA (BF-208)
208-pin PQFP (DR-208)
256-pin BGA (BC-256)
200
166
133
Commercial Only(1)
Commercial & Industrial(2)
Commercial & Industrial
S
Standard Power
Speed in Megahertz
70V7519 9Mbit (256K x 36-Bit) Synchronous Bank-Switchable Dual-Port RAM
5618 drw 22
NOTES:
1. Available in BC-256 package only.
2. Industrial Temperature at 166Mhz not available in BF-208 package.
Datasheet Document History:
1/5/00:
10/19/01:
01/11/02:
03/18/02:
12/4/02:
Initial Public Offering
Page 2, 3 & 4 Added date revision for pin configurations
Page 9 Changed ISB3 values for commercial and industrial DC Electrical Characteristics
Page 11 Changed tOE value in AC Electrical Characteristics, please refer to Errata #SMEN-01-05
Page 20 Increased tJCD from 20ns to 25ns, please refer to Errata #SMEN-01-04
Page 1 & 22 Replaced TM logo with ® logo
Page 2 Corrected BF-208 pinout configuration fpBGA A15
Page 1, 9, 11 & 22 Added 200MHz specification
Page 9 Tightened power numbers in DC Electrical Characteristics
Page 14 Changed waveforms to show INVALID operation from opposite ports if tCO < minimum specified
Page 1 - 22 Removed "Preliminary" status
Page 9, 11 & 22 Designated 200Mhz speed grade available in BC-256 package only.
CORPORATE HEADQUARTERS
2975 Stender Way
Santa Clara, CA 95054
for SALES:
800-345-7015 or 408-727-5166
fax: 408-492-8674
www.idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
6.42
22
for Tech Support:
831-754-4613
[email protected]