Die Datasheet GB20SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE (version 4) software for simulation of the GB20SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GB20SHT12-CAL SPICE Model * .SUBCKT GB20SHT12 ANODE KATHODE D1 ANODE KATHODE GB20SHT12_25C; Call the Schottky Diode Model D2 ANODE KATHODE GB20SHT12_PIN; Call the PiN Diode Model . MODEL GB20SHT12_25C D + IS 1.74E-13 RS 0.05105 + TRS1 0.005 TRS2 1.68E-5 + N 1.2637323 IKF 1.884319 + EG 1.2 XTI 3 + CJO 1.15E-09 VJ 0.44 + M 1.5 FC 0.5 + TT 1.00E-10 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 20 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor . MODEL GB20SHT12_PIN D + IS 5.15E-15 RS 0.2 + N 3.1605 IKF 0.00055844 + EG 3.23 XTI 3 + FC 0.5 TT 0 + BV 1200 IBV 1.00E-03 + VPK 1200 IAVE 20 + TYPE SiC_PiN .ENDS * * End of GB20SHT12-CAL SPICE Model Sep 2013 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg1 of 1