Die Datasheet GA01PNS80-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE (version 4) software for simulation of the GA01PNS80-CAL device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.1 $ * $Date: 30-APR-2015 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GA01PNS80-CAL SPICE Model * . MODEL GA01PNS80 D + IS 9.2491e-015 + RS 1.02512 + N 3.3373 + IKF 0.00011784 + EG 3.23 + XTI 25 + TRS1 -0.0024 + CJO 2.7E-11 + VJ 2.304 + M 0.376 + FC 0.5 + BV 8000 + IBV 1.00E-03 + VPK 8000 + IAVE 1 + TYPE SiC_PiN + MFG GeneSiC_Semi * * End of GA01PNS80-CAL SPICE Model Apr 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 1 of 1