Die Datasheet GAP05SLT80-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE (version 4) software for simulation of the GAP05SLT80-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.1 $ * $Date: 15-SEP-2014 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GAP05SLT80-CAL SPICE Model .SUBCKT GAP05SLT80 ANODE KATHODE R1 ANODE INT R=((TEMP-24)*0.81); Temperature Dependant Resistor D1 INT KATHODE GAP05SLT80_25C .MODEL GAP05SLT80_25C D; Model of GAP05SLT80-220 Device at 25 C + IS 14.067E-15 + N 1.3760 + RS 42.6 + IKF 157.39E-6 + EG 1.2 + XTI -85 + CJO 21.838E-12 + M 0.258 + VJ 3.198 + BV 9000 + IBV 1E-3 + TT 1.0000E-10 + VPK 8000 + IAVE 3E-2 + TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .ENDS * * End of GAP05SLT80-CAL SPICE Model Sep 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 1 of 1