MIMMK160S160B

MIMMK160S160B
Feb 2009
PRELIMINARY
1600V 160A Thyristor Module
RoHS Compliant
Features
· Isolation voltage 3500 V~
· Industrial Standard Package
· High Surge Capability
· Glass Passivated Chips
· Simple Mounting
· Electrically Isolated by DBC Ceramic
Applications
· DC Motor Control and Drives
· Battery Charges
· Welders
· Power Converters
· Lighting Control
· Heat and Temperature Control
Advantages
· Space and weight savings
· Improved temperature and power cycling
ABSOLUTE MAXIMUM RATINGS
Symbol
Test Condition
V RRM /V DRM
T C =25°C unless otherwise specified
Value
Unit
1600
V
I T(AV)
T C =85℃,180° conduction, half sine wave;
160
A
I T(RMS)
as AC switch;
355
A
T J =45℃, t=10m s (50H z),sine, V R =0;
4870
T J =45℃, t=8.3 m s (60H z),sine, V R =0;
5100
T J =45℃, t=10m s (50H z),sine, V R =V RRM ;
4100
T J =45℃, t=8.3 m s (60H z),sine, V R = V RRM ;
4300
119
I TSM
T J =45℃, t=10m s (50H z),sine, V R =0;
2
It
T J =45℃, t=8.3 m s (60H z),sine, V R =0;
T J =45℃, t=10m s (50H z),sine, V R =V RRM ;
130
84
T J =45℃, t=8.3 m s (60H z),sine, V R = V RRM ;
92.5
I DRM /I RRM
T J =125℃,V D =V R =1600V;
dV/dt
A
2
KA s
50
mA
T J =125℃, exponential to 67% rated V DRM
1000
V/us
V ISOL
50Hz, all terminals shorted, t=1s, I ISOL ≤1mA ;
3500
V~
TJ
Max. junction operating temperature range
-40~125
℃
T STG
Max. storage temperature range
-40~150
℃
MIMMK160S160B
ELECTRICAL CHARACTERISTICS
Symbol Test Condition
V TO
rt
T C =25°C unless otherwise specified
Min.
Typ. Max. Unit
16.7% x π x I AV < I <π x I AV ,T J =130°C;
0.80
V
I > π x I AV , T J =130°C;
0.98
V
16.7% x π x I AV < I <π x I AV ,T J =130°C;
1.67
mΩ
I > π x I AV , T J =130°C;
1.38
mΩ
IH
V AK = 6V, initial I T =30A;
200
mA
IL
Anode supply =6V, resistive load=1Ω,
400
mA
gate pulse =10V, 100us;
V TM
I TM =502A, t d =10 ms, half sine;
P GM
t p ≤5ms, Tj=125°C;
12
W
P GM(AV)
f=50Hz, Tj=125°C;
3
W
3
A
10
V
I GM
-V GT
1.54
V
t p ≤5ms, Tj=125°C;
V A =6V, R A =1Ω, Tj=-40°C;
V GT
I GT
V GD
I GD
di/dt
4
V A =6V, R A =1Ω;
2.5
V A =6V, R A =1Ω, Tj=125°C;
1.7
V A =6V, R A =1Ω, Tj=-40°C;
270
V A =6V, R A =1Ω;
150
V A =6V, R A =1Ω, Tj=125°C;
80
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Test Condition
mA
0.3
V
10
mA
300
A/us
V AK =V DRM , Tj=125℃
I TM =400A, rated V DRM , Tj=125℃
V
T C =25°C unless otherwise specified
value
Unit
R thjc
DC operation, per junction;
0.18
K/W
R THCS
Mounting surface smooth,flat and greased, per junction;
0.1
K/W
Md
Weight
Mounting torque(M6)
Terminal connection torque(M6)
Typical value
4 to 6
N·m
156
g
MIMMK160S160B
Characteristic curves
130
RTHJC(DC)=0.18 K/W
120
110
Conduction angle
100
90
30
60
80
90
120
180
70
0
Maximun allowable case tem (℃)
Maximun allowable case tem (℃)
130
60
120
Average forward current(A)
RTHJC(DC)=0.18 K/W
120
110
100
Conduction period
30
90
60
80
90
70
60
180
0
350
300
180
120
90
60
30
250
200
150
RMS limit
100
50
0
Conduction angle
0
Maximun average on-state power loss (W)
Maximun average on-state power loss (W)
Per junction
TJ=125℃
20 40 60 80 100 120 140 160 180
Average on-state current(A)
4000
Initial TJ=125℃
@60Hz 0.0083 s
@50Hz 0.01 s
3500
3000
2500
2000
Per junction
1500
100
1
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Figure 5. Maximum Non-Repetitive Surge Current
300
DC
180
120
90
60
30
350
300
250
200
RMS limit
150
100
Conduction period
Per junction
TJ=125℃
50
0
0
30 60 90 120 150 180 210 240 270
Average on-state current(A)
Figure 4. on-state power loss characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
At any rated load condition and with
rated VRRM applied following surge
100
200
Average on-state current (A)
400
Figure 3. on-state power loss characteristics
4500
DC
Figure 2. current rating characteristics
Figure 1. current rating characteristics
400
120
180
5000
4500
4000
3500
Maximum non repetitive surge
current versus pulse train duration.
control of conduction may not be
maintained.
Initial TJ= 125℃
no voltage reapplied
rated VRRM reapplied
3000
2500
2000
1500
0.01
Per junction
0.1
Pulse Train Duration (s)
1
Figure 6. Maximum Non-Repetitive Surge Current
MIMMK160S160B
600
Maximum Total On-state Power Loss (W)
Maximum Total On-state Power Loss (W)
600
180
120
90
60
30
500
400
300
Conduction angle
200
Per module
TJ=125℃
100
0
0
100
200
400
300
Total RMS Output Current (A)
500
0.06K/W
400
0.08K/W
0.1K/W
300
0.16K/W
0.2K/W
200
100
0
0
Figure 7. On-State Power Loss Characteristics-1
25
Figure.8
10000
1000
Transient Thermal Impedance ZthJC
1
TJ=25℃
TJ=125℃
100
10
Per junction
0
0
4
1
2
3
Instantaneous On-state Voltage (V)
Figure.9
75
100
On-State Power Loss Characteristics-2
1
0.1
Square Wave Pulse Duration (s)
(1) PGM = 200 W, tp = 300s
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
a)Recommended load line
for rated di/dt:20V, 20Ω
tr =0.5s, tp≥6 s
b)Recommended load line
10 for ≤30% rated di/dt:15V, (a)
40Ω
(b)
TJ=-40℃
TJ=25℃
TJ=125℃
1
(4)
VGD
(3)
(2)
(1)
Frequency Limited by PG(AV)
IGD
0.01
0.1
10
Figure.10 Thermal Impedance ZthJC Characteristics
On State Voltage Drop Characteristics
0.1
0.001
125
Steady State Value
(DC Operation)
0.01
0.01
5
50
0.1
100 Rectangular gate pulse
Instantaneous Gate Voltage (V)
Instantaneous On-state Current (A)
RTHSA=0.02K/W-Delta R
0.04K/W
1
Instantaneous Gate Current (A)
Figure.11 Gate Characteristics
10
100
1000
MIMMK160S160B
Package Outline (Dimensions in mm)